The effect of the buffer SiO2 on plastic substrate for laser crystallization of Si films

J. S. Jung, D. Y. Kim, J. M. Kim, J. Y. Kwon, K. B. Park, H. Lim, T. Noguchi

Research output: Contribution to conferencePaper

Abstract

We have investigated the factors that the effect of the buffer SiO 2 layer strongly related to crystallization of Si film during laser annealing. Crystallization of Si films on plastic substrate is strongly affected by thickness, roughness of buffer SiO2 and substrate bending. The increasing buffer layer thickness prevents the agglomeration of Si film during laser irradiation. The stress in Si film by substrate bending also induces agglomeration of Si films. Finally higher RMS roughness of bottom layer under Si induced larger nucleation site during crystallization and hence smaller grains.

Original languageEnglish
Pages1145-1148
Number of pages4
Publication statusPublished - 2005 Dec 1
EventIDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005 - Takamatsu, Japan
Duration: 2005 Dec 62005 Dec 9

Other

OtherIDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005
CountryJapan
CityTakamatsu
Period05/12/605/12/9

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Jung, J. S., Kim, D. Y., Kim, J. M., Kwon, J. Y., Park, K. B., Lim, H., & Noguchi, T. (2005). The effect of the buffer SiO2 on plastic substrate for laser crystallization of Si films. 1145-1148. Paper presented at IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005, Takamatsu, Japan.