We have investigated the factors that the effect of the buffer SiO 2 layer strongly related to crystallization of Si film during laser annealing. Crystallization of Si films on plastic substrate is strongly affected by thickness, roughness of buffer SiO2 and substrate bending. The increasing buffer layer thickness prevents the agglomeration of Si film during laser irradiation. The stress in Si film by substrate bending also induces agglomeration of Si films. Finally higher RMS roughness of bottom layer under Si induced larger nucleation site during crystallization and hence smaller grains.
|Number of pages||4|
|Publication status||Published - 2005 Dec 1|
|Event||IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005 - Takamatsu, Japan|
Duration: 2005 Dec 6 → 2005 Dec 9
|Other||IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005|
|Period||05/12/6 → 05/12/9|
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