The effect of the photo-induced carriers on the reliability of oxide TFTs under various intensities of light

Soo Yeon Lee; Sun Jae Kim; Young Wook Lee; Woo Geun Lee; Kap Soo Yoon; Jang Yeon Kwon; Min Koo Han

doi:10.1109/LED.2011.2177633

The effect of the photo-induced carriers on the reliability of oxide TFTs under various intensities of light

Soo Yeon Lee, Sun Jae Kim, Young Wook Lee, Woo Geun Lee, Kap Soo Yoon, Jang Yeon Kwon, Min Koo Han

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

We investigated the reliability of oxide TFTs under negative gate bias stress combined with various intensities of light having a wavelength of 400 nm. Light illumination caused a considerable V _th shift toward negative direction, as reported in previous works. However, the trapping probability of a single hole is not altered, which means that the basic mechanism of the charge trapping is not changed by light illumination. In oxide TFTs, the hole concentration at the channel and the characteristics of the gate insulator materials are the determinant factors of the reliability under light illumination.

Original language	English
Article number	6122487
Pages (from-to)	218-220
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	2
DOIs	https://doi.org/10.1109/LED.2011.2177633
Publication status	Published - 2012 Feb

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2011.2177633

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abstract = "We investigated the reliability of oxide TFTs under negative gate bias stress combined with various intensities of light having a wavelength of 400 nm. Light illumination caused a considerable V th shift toward negative direction, as reported in previous works. However, the trapping probability of a single hole is not altered, which means that the basic mechanism of the charge trapping is not changed by light illumination. In oxide TFTs, the hole concentration at the channel and the characteristics of the gate insulator materials are the determinant factors of the reliability under light illumination.",

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AU - Kwon, Jang Yeon

AU - Han, Min Koo

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The effect of the photo-induced carriers on the reliability of oxide TFTs under various intensities of light

Abstract

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