The effect of the substrate on the growth of silicon carbide whiskers by chemical vapor deposition

Dong Chan Lim, Doo Jin Choi

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Abstract

Silicon carbide (SiC) has superior mechanical and chemical properties due to its strong covalent bonding. In the special case of SiC whiskers, their application is expanding widely. In general, silicon carbide whiskers are grown with the aid of a metallic catalyst, but this method presents some problems. In the present work, SiC whiskers were grown without a metallic catalyst SiC whiskers were grown on graphite and silicon substrates to examine the effect of the substrate on the growth behavior. Also, the effects of deposition temperature were studied.

Original languageEnglish
Pages (from-to)205-209
Number of pages5
JournalJournal of Ceramic Processing Research
Volume3
Issue number3 PART 2
Publication statusPublished - 2002 Dec 1

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All Science Journal Classification (ASJC) codes

  • Ceramics and Composites

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