Abstract
Silicon carbide (SiC) has superior mechanical and chemical properties due to its strong covalent bonding. In the special case of SiC whiskers, their application is expanding widely. In general, silicon carbide whiskers are grown with the aid of a metallic catalyst, but this method presents some problems. In the present work, SiC whiskers were grown without a metallic catalyst SiC whiskers were grown on graphite and silicon substrates to examine the effect of the substrate on the growth behavior. Also, the effects of deposition temperature were studied.
| Original language | English |
|---|---|
| Pages (from-to) | 205-209 |
| Number of pages | 5 |
| Journal | Journal of Ceramic Processing Research |
| Volume | 3 |
| Issue number | 3 PART 2 |
| Publication status | Published - 2002 Dec 1 |
All Science Journal Classification (ASJC) codes
- Ceramics and Composites
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Lim, D. C., & Choi, D. J. (2002). The effect of the substrate on the growth of silicon carbide whiskers by chemical vapor deposition. Journal of Ceramic Processing Research, 3(3 PART 2), 205-209.