Abstract
Silicon carbide (SiC) has superior mechanical and chemical properties due to its strong covalent bonding. In the special case of SiC whiskers, their application is expanding widely. In general, silicon carbide whiskers are grown with the aid of a metallic catalyst, but this method presents some problems. In the present work, SiC whiskers were grown without a metallic catalyst SiC whiskers were grown on graphite and silicon substrates to examine the effect of the substrate on the growth behavior. Also, the effects of deposition temperature were studied.
| Original language | English |
|---|---|
| Pages (from-to) | 205-209 |
| Number of pages | 5 |
| Journal | Journal of Ceramic Processing Research |
| Volume | 3 |
| Issue number | 3 PART 2 |
| Publication status | Published - 2002 Dec 1 |
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All Science Journal Classification (ASJC) codes
- Ceramics and Composites
Cite this
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The effect of the substrate on the growth of silicon carbide whiskers by chemical vapor deposition. / Lim, Dong Chan; Choi, Doo Jin.
In: Journal of Ceramic Processing Research, Vol. 3, No. 3 PART 2, 01.12.2002, p. 205-209.Research output: Contribution to journal › Article
TY - JOUR
T1 - The effect of the substrate on the growth of silicon carbide whiskers by chemical vapor deposition
AU - Lim, Dong Chan
AU - Choi, Doo Jin
PY - 2002/12/1
Y1 - 2002/12/1
N2 - Silicon carbide (SiC) has superior mechanical and chemical properties due to its strong covalent bonding. In the special case of SiC whiskers, their application is expanding widely. In general, silicon carbide whiskers are grown with the aid of a metallic catalyst, but this method presents some problems. In the present work, SiC whiskers were grown without a metallic catalyst SiC whiskers were grown on graphite and silicon substrates to examine the effect of the substrate on the growth behavior. Also, the effects of deposition temperature were studied.
AB - Silicon carbide (SiC) has superior mechanical and chemical properties due to its strong covalent bonding. In the special case of SiC whiskers, their application is expanding widely. In general, silicon carbide whiskers are grown with the aid of a metallic catalyst, but this method presents some problems. In the present work, SiC whiskers were grown without a metallic catalyst SiC whiskers were grown on graphite and silicon substrates to examine the effect of the substrate on the growth behavior. Also, the effects of deposition temperature were studied.
UR - http://www.scopus.com/inward/record.url?scp=0346675286&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0346675286&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0346675286
VL - 3
SP - 205
EP - 209
JO - Journal of Ceramic Processing Research
JF - Journal of Ceramic Processing Research
SN - 1229-9162
IS - 3 PART 2
ER -