The effect of the substrate on the growth of silicon carbide whiskers by chemical vapor deposition

Dong Chan Lim, Doo Jin Choi

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Silicon carbide (SiC) has superior mechanical and chemical properties due to its strong covalent bonding. In the special case of SiC whiskers, their application is expanding widely. In general, silicon carbide whiskers are grown with the aid of a metallic catalyst, but this method presents some problems. In the present work, SiC whiskers were grown without a metallic catalyst SiC whiskers were grown on graphite and silicon substrates to examine the effect of the substrate on the growth behavior. Also, the effects of deposition temperature were studied.

Original languageEnglish
Pages (from-to)205-209
Number of pages5
JournalJournal of Ceramic Processing Research
Volume3
Issue number3 PART 2
Publication statusPublished - 2002 Dec 1

Fingerprint

Silicon carbide
Chemical vapor deposition
Substrates
Catalysts
Graphite
Silicon
Chemical properties
silicon carbide
Mechanical properties
Temperature

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites

Cite this

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The effect of the substrate on the growth of silicon carbide whiskers by chemical vapor deposition. / Lim, Dong Chan; Choi, Doo Jin.

In: Journal of Ceramic Processing Research, Vol. 3, No. 3 PART 2, 01.12.2002, p. 205-209.

Research output: Contribution to journalArticle

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