The effect of thermal annealing sequence on amorphous InGaZnO thin film transistor with a plasma-treated source-drain structure

Hyun Soo Shin, Byung Du Ahn, Kyung Ho Kim, Jin Seong Park, Heon Je Kim

Research output: Contribution to journal › Article › peer-review

Cite this

@article{bee128d851d34a889d26cd81dbc2e964,

title = "The effect of thermal annealing sequence on amorphous InGaZnO thin film transistor with a plasma-treated source-drain structure",

author = "Shin, {Hyun Soo} and {Du Ahn}, Byung and Kim, {Kyung Ho} and Park, {Jin Seong} and Kim, {Heon Je}",

year = "2009",

month = oct,

language = "English",

volume = "517",

pages = "6349",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "23",

}

TY - JOUR

T1 - The effect of thermal annealing sequence on amorphous InGaZnO thin film transistor with a plasma-treated source-drain structure

AU - Shin, Hyun Soo

AU - Du Ahn, Byung

AU - Kim, Kyung Ho

AU - Park, Jin Seong

AU - Kim, Heon Je

PY - 2009/10

Y1 - 2009/10

M3 - Article

SN - 0040-6090

VL - 517

SP - 6349

JO - Thin Solid Films

JF - Thin Solid Films

IS - 23

ER -