The effect of thermal annealing sequence on amorphous InGaZnO thin film transistor with a plasma-treated source-drain structure

Hyun Soo Shin, Byung Du Ahn, Kyung Ho Kim, Jin Seong Park, Heon Je Kim

Research output: Contribution to journalArticle

45 Citations (Scopus)
Original languageEnglish
Pages (from-to)6349
Number of pages6352
JournalThin Solid Films
Volume517
Issue number23
Publication statusPublished - 2009 Oct

Cite this

Shin, Hyun Soo ; Du Ahn, Byung ; Kim, Kyung Ho ; Park, Jin Seong ; Kim, Heon Je. / The effect of thermal annealing sequence on amorphous InGaZnO thin film transistor with a plasma-treated source-drain structure. In: Thin Solid Films. 2009 ; Vol. 517, No. 23. pp. 6349.
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The effect of thermal annealing sequence on amorphous InGaZnO thin film transistor with a plasma-treated source-drain structure. / Shin, Hyun Soo; Du Ahn, Byung; Kim, Kyung Ho; Park, Jin Seong; Kim, Heon Je.

In: Thin Solid Films, Vol. 517, No. 23, 10.2009, p. 6349.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The effect of thermal annealing sequence on amorphous InGaZnO thin film transistor with a plasma-treated source-drain structure

AU - Shin, Hyun Soo

AU - Du Ahn, Byung

AU - Kim, Kyung Ho

AU - Park, Jin Seong

AU - Kim, Heon Je

PY - 2009/10

Y1 - 2009/10

M3 - Article

VL - 517

SP - 6349

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 23

ER -