The effect of Ti on InZnO based thin-film transistors

Dong Lim Kim, Woong Hee Jeong, Hyun Jae Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper dealt with the investigation on the effect of Ti addition in InZnO. The solution process of TiInZnO thin-film transistor (TIZO TFT) was first achieved, and the variation of the electrical properties in TIZO TFT was compared to that of IZO TFT. The analyses on the electrical properties confirmed the carrier suppressing role of Ti. The improved current modulation property of on/off ratio of 106 and subthreshold slope of 1.08 V/dec in the transfer curve was achieved in TIZO TFT.

Original languageEnglish
Title of host publication10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010
Pages504-505
Number of pages2
Publication statusPublished - 2010 Dec 1
Event10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010 - Seoul, Korea, Republic of
Duration: 2010 Oct 112010 Oct 15

Publication series

NameProceedings of International Meeting on Information Display
ISSN (Print)1738-7558

Other

Other10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010
CountryKorea, Republic of
CitySeoul
Period10/10/1110/10/15

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Kim, D. L., Jeong, W. H., & Kim, H. J. (2010). The effect of Ti on InZnO based thin-film transistors. In 10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010 (pp. 504-505). (Proceedings of International Meeting on Information Display).