The effect of ultraviolet exposure on solution process of silicon thin film

Dong Lim Kim; Sang Hoon Pak; Si Joon Kim; Seong Kee Park; Hyun Jae Kim

doi:10.1149/1.3202401

The effect of ultraviolet exposure on solution process of silicon thin film

Dong Lim Kim, Sang Hoon Pak, Si Joon Kim, Seong Kee Park, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Cyclopentasilane, which has a chemical shift at 3.7 ppm as revealed by ¹H NMR, was used as a precursor for solution-processed Si films after photopolymerization. X-ray photoelectron spectroscopy revealed a Si 2p peak at 99.68 eV, showing a binding energy shift of about 0.3 eV due to a decrease in hydrogen content resulting from UV exposure. Meanwhile, Raman shifts maintained their demonstration of the amorphous Si phase of the films. Based on these results, we confirm the modification of the amorphous Si structure due to UV exposure on polysilane solution during solution process.

Original language	English
Pages (from-to)	E23-E25
Journal	Electrochemical and Solid-State Letters
Volume	12
Issue number	11
DOIs	https://doi.org/10.1149/1.3202401
Publication status	Published - 2009

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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title = "The effect of ultraviolet exposure on solution process of silicon thin film",

abstract = "Cyclopentasilane, which has a chemical shift at 3.7 ppm as revealed by 1H NMR, was used as a precursor for solution-processed Si films after photopolymerization. X-ray photoelectron spectroscopy revealed a Si 2p peak at 99.68 eV, showing a binding energy shift of about 0.3 eV due to a decrease in hydrogen content resulting from UV exposure. Meanwhile, Raman shifts maintained their demonstration of the amorphous Si phase of the films. Based on these results, we confirm the modification of the amorphous Si structure due to UV exposure on polysilane solution during solution process.",

author = "Kim, {Dong Lim} and Pak, {Sang Hoon} and Kim, {Si Joon} and Park, {Seong Kee} and Kim, {Hyun Jae}",

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volume = "12",

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AU - Kim, Dong Lim

AU - Pak, Sang Hoon

AU - Kim, Si Joon

AU - Park, Seong Kee

AU - Kim, Hyun Jae

PY - 2009

Y1 - 2009

N2 - Cyclopentasilane, which has a chemical shift at 3.7 ppm as revealed by 1H NMR, was used as a precursor for solution-processed Si films after photopolymerization. X-ray photoelectron spectroscopy revealed a Si 2p peak at 99.68 eV, showing a binding energy shift of about 0.3 eV due to a decrease in hydrogen content resulting from UV exposure. Meanwhile, Raman shifts maintained their demonstration of the amorphous Si phase of the films. Based on these results, we confirm the modification of the amorphous Si structure due to UV exposure on polysilane solution during solution process.

AB - Cyclopentasilane, which has a chemical shift at 3.7 ppm as revealed by 1H NMR, was used as a precursor for solution-processed Si films after photopolymerization. X-ray photoelectron spectroscopy revealed a Si 2p peak at 99.68 eV, showing a binding energy shift of about 0.3 eV due to a decrease in hydrogen content resulting from UV exposure. Meanwhile, Raman shifts maintained their demonstration of the amorphous Si phase of the films. Based on these results, we confirm the modification of the amorphous Si structure due to UV exposure on polysilane solution during solution process.

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JO - Electrochemical and Solid-State Letters

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ER -

The effect of ultraviolet exposure on solution process of silicon thin film

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