Cyclopentasilane, which has a chemical shift at 3.7 ppm as revealed by 1H NMR, was used as a precursor for solution-processed Si films after photopolymerization. X-ray photoelectron spectroscopy revealed a Si 2p peak at 99.68 eV, showing a binding energy shift of about 0.3 eV due to a decrease in hydrogen content resulting from UV exposure. Meanwhile, Raman shifts maintained their demonstration of the amorphous Si phase of the films. Based on these results, we confirm the modification of the amorphous Si structure due to UV exposure on polysilane solution during solution process.
|Journal||Electrochemical and Solid-State Letters|
|Publication status||Published - 2009|
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering