The effect of ultraviolet exposure on solution process of silicon thin film

Dong Lim Kim, Sang Hoon Pak, Si Joon Kim, Seong Kee Park, Hyun Jae Kim

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Abstract

Cyclopentasilane, which has a chemical shift at 3.7 ppm as revealed by 1H NMR, was used as a precursor for solution-processed Si films after photopolymerization. X-ray photoelectron spectroscopy revealed a Si 2p peak at 99.68 eV, showing a binding energy shift of about 0.3 eV due to a decrease in hydrogen content resulting from UV exposure. Meanwhile, Raman shifts maintained their demonstration of the amorphous Si phase of the films. Based on these results, we confirm the modification of the amorphous Si structure due to UV exposure on polysilane solution during solution process.

Original languageEnglish
Pages (from-to)E23-E25
JournalElectrochemical and Solid-State Letters
Volume12
Issue number11
DOIs
Publication statusPublished - 2009 Sep 18

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All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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