The effect of ultraviolet treatment in solution process for the SnZnO thin-film transistor

Dong Lim Kim, You Seung Rim, Joohye Jung, Woong Hee Jeong, Sang Hoon Oh, Hyun Jae Kim, Oudwan Maher, Yvan Bonnassieux

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Modification of solution process via ultraviolet (UV) treatment is suggested. UV with the wavelength of 185 nm was exposed on the oxide material to decompose the metal-ligand bond and to increase carrier concentration. The field-effect mobility of SnZnO thin-film transistor was increased from 0.52 to 1.45 cm 2/Vs after the treatment.

Original languageEnglish
Title of host publication31st International Display Research Conference 2011, EuroDisplay 2011
Pages350-352
Number of pages3
Publication statusPublished - 2011 Dec 1
Event31st International Display Research Conference 2011, EuroDisplay 2011 - Arcachon, France
Duration: 2011 Sep 192011 Sep 22

Publication series

NameSID Conference Record of the International Display Research Conference
ISSN (Print)1083-1312

Other

Other31st International Display Research Conference 2011, EuroDisplay 2011
CountryFrance
CityArcachon
Period11/9/1911/9/22

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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  • Cite this

    Kim, D. L., Rim, Y. S., Jung, J., Jeong, W. H., Oh, S. H., Kim, H. J., Maher, O., & Bonnassieux, Y. (2011). The effect of ultraviolet treatment in solution process for the SnZnO thin-film transistor. In 31st International Display Research Conference 2011, EuroDisplay 2011 (pp. 350-352). (SID Conference Record of the International Display Research Conference).