The effect of ultraviolet treatment in solution process for the SnZnO thin-film transistor

Dong Lim Kim, You Seung Rim, Joohye Jung, Woong Hee Jeong, Sang Hoon Oh, Hyun Jae Kim, Oudwan Maher, Yvan Bonnassieux

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Modification of solution process via ultraviolet (UV) treatment is suggested. UV with the wavelength of 185 nm was exposed on the oxide material to decompose the metal-ligand bond and to increase carrier concentration. The field-effect mobility of SnZnO thin-film transistor was increased from 0.52 to 1.45 cm 2/Vs after the treatment.

Original languageEnglish
Title of host publication31st International Display Research Conference 2011, EuroDisplay 2011
Pages350-352
Number of pages3
Publication statusPublished - 2011 Dec 1
Event31st International Display Research Conference 2011, EuroDisplay 2011 - Arcachon, France
Duration: 2011 Sep 192011 Sep 22

Other

Other31st International Display Research Conference 2011, EuroDisplay 2011
CountryFrance
CityArcachon
Period11/9/1911/9/22

Fingerprint

Thin film transistors
Carrier concentration
Ligands
Wavelength
Oxides
Metals

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Kim, D. L., Rim, Y. S., Jung, J., Jeong, W. H., Oh, S. H., Kim, H. J., ... Bonnassieux, Y. (2011). The effect of ultraviolet treatment in solution process for the SnZnO thin-film transistor. In 31st International Display Research Conference 2011, EuroDisplay 2011 (pp. 350-352)
Kim, Dong Lim ; Rim, You Seung ; Jung, Joohye ; Jeong, Woong Hee ; Oh, Sang Hoon ; Kim, Hyun Jae ; Maher, Oudwan ; Bonnassieux, Yvan. / The effect of ultraviolet treatment in solution process for the SnZnO thin-film transistor. 31st International Display Research Conference 2011, EuroDisplay 2011. 2011. pp. 350-352
@inproceedings{ed1100c14ab64895ae9691dea763f800,
title = "The effect of ultraviolet treatment in solution process for the SnZnO thin-film transistor",
abstract = "Modification of solution process via ultraviolet (UV) treatment is suggested. UV with the wavelength of 185 nm was exposed on the oxide material to decompose the metal-ligand bond and to increase carrier concentration. The field-effect mobility of SnZnO thin-film transistor was increased from 0.52 to 1.45 cm 2/Vs after the treatment.",
author = "Kim, {Dong Lim} and Rim, {You Seung} and Joohye Jung and Jeong, {Woong Hee} and Oh, {Sang Hoon} and Kim, {Hyun Jae} and Oudwan Maher and Yvan Bonnassieux",
year = "2011",
month = "12",
day = "1",
language = "English",
isbn = "9781618396006",
pages = "350--352",
booktitle = "31st International Display Research Conference 2011, EuroDisplay 2011",

}

Kim, DL, Rim, YS, Jung, J, Jeong, WH, Oh, SH, Kim, HJ, Maher, O & Bonnassieux, Y 2011, The effect of ultraviolet treatment in solution process for the SnZnO thin-film transistor. in 31st International Display Research Conference 2011, EuroDisplay 2011. pp. 350-352, 31st International Display Research Conference 2011, EuroDisplay 2011, Arcachon, France, 11/9/19.

The effect of ultraviolet treatment in solution process for the SnZnO thin-film transistor. / Kim, Dong Lim; Rim, You Seung; Jung, Joohye; Jeong, Woong Hee; Oh, Sang Hoon; Kim, Hyun Jae; Maher, Oudwan; Bonnassieux, Yvan.

31st International Display Research Conference 2011, EuroDisplay 2011. 2011. p. 350-352.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - The effect of ultraviolet treatment in solution process for the SnZnO thin-film transistor

AU - Kim, Dong Lim

AU - Rim, You Seung

AU - Jung, Joohye

AU - Jeong, Woong Hee

AU - Oh, Sang Hoon

AU - Kim, Hyun Jae

AU - Maher, Oudwan

AU - Bonnassieux, Yvan

PY - 2011/12/1

Y1 - 2011/12/1

N2 - Modification of solution process via ultraviolet (UV) treatment is suggested. UV with the wavelength of 185 nm was exposed on the oxide material to decompose the metal-ligand bond and to increase carrier concentration. The field-effect mobility of SnZnO thin-film transistor was increased from 0.52 to 1.45 cm 2/Vs after the treatment.

AB - Modification of solution process via ultraviolet (UV) treatment is suggested. UV with the wavelength of 185 nm was exposed on the oxide material to decompose the metal-ligand bond and to increase carrier concentration. The field-effect mobility of SnZnO thin-film transistor was increased from 0.52 to 1.45 cm 2/Vs after the treatment.

UR - http://www.scopus.com/inward/record.url?scp=84860866304&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84860866304&partnerID=8YFLogxK

M3 - Conference contribution

SN - 9781618396006

SP - 350

EP - 352

BT - 31st International Display Research Conference 2011, EuroDisplay 2011

ER -

Kim DL, Rim YS, Jung J, Jeong WH, Oh SH, Kim HJ et al. The effect of ultraviolet treatment in solution process for the SnZnO thin-film transistor. In 31st International Display Research Conference 2011, EuroDisplay 2011. 2011. p. 350-352