The effect of ZnO surface conditions on the electronic structure of the ZnO/CuPc interface

Sang Han Park, Hyo Jin Kim, Mann Ho Cho, Yeonjin Yi, Sang Wan Cho, Jaehyun Yang, Hyoungsub Kim

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

The interfacial electronic structures of zinc oxide (ZnO)/copper- phthalocyanine (CuPc) were investigated by in situ x-ray and ultraviolet photoelectron spectroscopy (UPS) to determine the effects of air contamination on the ZnO substrate. UPS spectra showed that the 0.2 eV of the interface dipole is generated at the interface of the air exposed ZnO/CuPc while the interface of the annealed ZnO/CuPc generated -0.2 eV. In both cases, no band bending was observed. On the other hand, band bending at 0.3 eV and an interface dipole of 0.2 eV were observed at the interface of the sputter cleaned ZnO/CuPc. The energy offset between the conduction band maximum of ZnO and the highest occupied molecular orbital of CuPc was determined to be 0.6-0.7 eV for the contaminated ZnO interface while the offset was 1.0 eV for the cleaned ZnO interface. Contaminating moisture has little effect on the offset while the charge transfer was blocked and the offset was decreased in the presence of hydrocarbons.

Original languageEnglish
Article number082111
JournalApplied Physics Letters
Volume98
Issue number8
DOIs
Publication statusPublished - 2011 Feb 21

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zinc oxides
electronic structure
ultraviolet spectroscopy
photoelectron spectroscopy
dipoles
air
moisture
molecular orbitals
conduction bands
contamination
hydrocarbons
charge transfer
copper
x rays

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "The effect of ZnO surface conditions on the electronic structure of the ZnO/CuPc interface",
abstract = "The interfacial electronic structures of zinc oxide (ZnO)/copper- phthalocyanine (CuPc) were investigated by in situ x-ray and ultraviolet photoelectron spectroscopy (UPS) to determine the effects of air contamination on the ZnO substrate. UPS spectra showed that the 0.2 eV of the interface dipole is generated at the interface of the air exposed ZnO/CuPc while the interface of the annealed ZnO/CuPc generated -0.2 eV. In both cases, no band bending was observed. On the other hand, band bending at 0.3 eV and an interface dipole of 0.2 eV were observed at the interface of the sputter cleaned ZnO/CuPc. The energy offset between the conduction band maximum of ZnO and the highest occupied molecular orbital of CuPc was determined to be 0.6-0.7 eV for the contaminated ZnO interface while the offset was 1.0 eV for the cleaned ZnO interface. Contaminating moisture has little effect on the offset while the charge transfer was blocked and the offset was decreased in the presence of hydrocarbons.",
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The effect of ZnO surface conditions on the electronic structure of the ZnO/CuPc interface. / Park, Sang Han; Kim, Hyo Jin; Cho, Mann Ho; Yi, Yeonjin; Cho, Sang Wan; Yang, Jaehyun; Kim, Hyoungsub.

In: Applied Physics Letters, Vol. 98, No. 8, 082111, 21.02.2011.

Research output: Contribution to journalArticle

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AU - Kim, Hyo Jin

AU - Cho, Mann Ho

AU - Yi, Yeonjin

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AU - Yang, Jaehyun

AU - Kim, Hyoungsub

PY - 2011/2/21

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