The effectiveness of a thin refractory metal layer inserted into a Ta film by ion-assisted deposition as a diffusion barrier between copper and silicon

Jong Hoon Kim, Sung Man Lee, Joon Seop Kwak, Hong Koo Baik, Hyuk Ju Ryu, Jung Ho Je

Research output: Contribution to journalArticle

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Abstract

In order to increase the failure temperature of a Ta diffusion barrier for Cu, we investigated the effect of adding of a thin refractory metal layer into a Ta film with/without ion bombardment on the Ta diffusion barrier performance in Cu metallization. The insertion of a thin Zr, W, Nb, or V layer into the Ta film improved the barrier properties significantly when the barrier layers were deposited with concurrent ion bombardment. The improvement of Ta diffusion barrier property was attributed to a densification of the grain boundaries in the films and to the formation of two thermally stable sharp interfaces between the Ta and the V by the ion bombardment, thereby retarding the Cu diffusion through Ta/V/Ta films.

Original languageEnglish
Pages (from-to)S349-S352
JournalJournal of the Korean Physical Society
Volume35
Issue numberSUPPL. 2
Publication statusPublished - 1999 Dec 1

Fingerprint

refractory metals
bombardment
copper
silicon
ions
barrier layers
densification
insertion
grain boundaries
retarding
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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title = "The effectiveness of a thin refractory metal layer inserted into a Ta film by ion-assisted deposition as a diffusion barrier between copper and silicon",
abstract = "In order to increase the failure temperature of a Ta diffusion barrier for Cu, we investigated the effect of adding of a thin refractory metal layer into a Ta film with/without ion bombardment on the Ta diffusion barrier performance in Cu metallization. The insertion of a thin Zr, W, Nb, or V layer into the Ta film improved the barrier properties significantly when the barrier layers were deposited with concurrent ion bombardment. The improvement of Ta diffusion barrier property was attributed to a densification of the grain boundaries in the films and to the formation of two thermally stable sharp interfaces between the Ta and the V by the ion bombardment, thereby retarding the Cu diffusion through Ta/V/Ta films.",
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The effectiveness of a thin refractory metal layer inserted into a Ta film by ion-assisted deposition as a diffusion barrier between copper and silicon. / Kim, Jong Hoon; Lee, Sung Man; Kwak, Joon Seop; Baik, Hong Koo; Ryu, Hyuk Ju; Je, Jung Ho.

In: Journal of the Korean Physical Society, Vol. 35, No. SUPPL. 2, 01.12.1999, p. S349-S352.

Research output: Contribution to journalArticle

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T1 - The effectiveness of a thin refractory metal layer inserted into a Ta film by ion-assisted deposition as a diffusion barrier between copper and silicon

AU - Kim, Jong Hoon

AU - Lee, Sung Man

AU - Kwak, Joon Seop

AU - Baik, Hong Koo

AU - Ryu, Hyuk Ju

AU - Je, Jung Ho

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AB - In order to increase the failure temperature of a Ta diffusion barrier for Cu, we investigated the effect of adding of a thin refractory metal layer into a Ta film with/without ion bombardment on the Ta diffusion barrier performance in Cu metallization. The insertion of a thin Zr, W, Nb, or V layer into the Ta film improved the barrier properties significantly when the barrier layers were deposited with concurrent ion bombardment. The improvement of Ta diffusion barrier property was attributed to a densification of the grain boundaries in the films and to the formation of two thermally stable sharp interfaces between the Ta and the V by the ion bombardment, thereby retarding the Cu diffusion through Ta/V/Ta films.

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