Abstract
In order to increase the failure temperature of a Ta diffusion barrier for Cu, we investigated the effect of adding of a thin refractory metal layer into a Ta film with/without ion bombardment on the Ta diffusion barrier performance in Cu metallization. The insertion of a thin Zr, W, Nb, or V layer into the Ta film improved the barrier properties significantly when the barrier layers were deposited with concurrent ion bombardment. The improvement of Ta diffusion barrier property was attributed to a densification of the grain boundaries in the films and to the formation of two thermally stable sharp interfaces between the Ta and the V by the ion bombardment, thereby retarding the Cu diffusion through Ta/V/Ta films.
| Original language | English |
|---|---|
| Pages (from-to) | S349-S352 |
| Journal | Journal of the Korean Physical Society |
| Volume | 35 |
| Issue number | SUPPL. 2 |
| Publication status | Published - 1999 Dec 1 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
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The effectiveness of a thin refractory metal layer inserted into a Ta film by ion-assisted deposition as a diffusion barrier between copper and silicon. / Kim, Jong Hoon; Lee, Sung Man; Kwak, Joon Seop; Baik, Hong Koo; Ryu, Hyuk Ju; Je, Jung Ho.
In: Journal of the Korean Physical Society, Vol. 35, No. SUPPL. 2, 01.12.1999, p. S349-S352.Research output: Contribution to journal › Article
TY - JOUR
T1 - The effectiveness of a thin refractory metal layer inserted into a Ta film by ion-assisted deposition as a diffusion barrier between copper and silicon
AU - Kim, Jong Hoon
AU - Lee, Sung Man
AU - Kwak, Joon Seop
AU - Baik, Hong Koo
AU - Ryu, Hyuk Ju
AU - Je, Jung Ho
PY - 1999/12/1
Y1 - 1999/12/1
N2 - In order to increase the failure temperature of a Ta diffusion barrier for Cu, we investigated the effect of adding of a thin refractory metal layer into a Ta film with/without ion bombardment on the Ta diffusion barrier performance in Cu metallization. The insertion of a thin Zr, W, Nb, or V layer into the Ta film improved the barrier properties significantly when the barrier layers were deposited with concurrent ion bombardment. The improvement of Ta diffusion barrier property was attributed to a densification of the grain boundaries in the films and to the formation of two thermally stable sharp interfaces between the Ta and the V by the ion bombardment, thereby retarding the Cu diffusion through Ta/V/Ta films.
AB - In order to increase the failure temperature of a Ta diffusion barrier for Cu, we investigated the effect of adding of a thin refractory metal layer into a Ta film with/without ion bombardment on the Ta diffusion barrier performance in Cu metallization. The insertion of a thin Zr, W, Nb, or V layer into the Ta film improved the barrier properties significantly when the barrier layers were deposited with concurrent ion bombardment. The improvement of Ta diffusion barrier property was attributed to a densification of the grain boundaries in the films and to the formation of two thermally stable sharp interfaces between the Ta and the V by the ion bombardment, thereby retarding the Cu diffusion through Ta/V/Ta films.
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M3 - Article
AN - SCOPUS:0033466965
VL - 35
SP - S349-S352
JO - Journal of the Korean Physical Society
JF - Journal of the Korean Physical Society
SN - 0374-4884
IS - SUPPL. 2
ER -