Abstract
The diffusion barrier properties of Ta, both as deposited without ion bombardment and deposited concurrent with ion energy, were investigated in the Cu/Ta/Si contact system using Auger electron spectroscopy, x-ray diffraction, optical microscopy, transmission electron microscopy, and sheet resistance measurements. It was found that the ion bombardment during deposition of Ta films influenced the microstructural characteristics, such as the packing density of grain boundaries, the grain size, and the preferred orientation of Ta grains. The Ta film deposited concurrent with 150 eV ion energy (0.13 mA/cm2) showed the increased packing density of grain boundaries, low resistivity, and preferred orientation. The densification of grain boundaries of the Ta barrier layer, followed by an increase of suicide formation temperature, significantly enhanced the barrier property of Ta in the Cu/Ta/Si system.
| Original language | English |
|---|---|
| Pages (from-to) | 1807-1812 |
| Number of pages | 6 |
| Journal | Journal of the Electrochemical Society |
| Volume | 144 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 1997 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry
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The effectiveness of Ta prepared by ion-assisted deposition as a diffusion barrier between copper and silicon. / Kang, Byoung Sun; Lee, Sung Man; Kwak, Joon Seop; Yoon, Dong Soo; Baik, Hong Koo.
In: Journal of the Electrochemical Society, Vol. 144, No. 5, 01.01.1997, p. 1807-1812.Research output: Contribution to journal › Article
TY - JOUR
T1 - The effectiveness of Ta prepared by ion-assisted deposition as a diffusion barrier between copper and silicon
AU - Kang, Byoung Sun
AU - Lee, Sung Man
AU - Kwak, Joon Seop
AU - Yoon, Dong Soo
AU - Baik, Hong Koo
PY - 1997/1/1
Y1 - 1997/1/1
N2 - The diffusion barrier properties of Ta, both as deposited without ion bombardment and deposited concurrent with ion energy, were investigated in the Cu/Ta/Si contact system using Auger electron spectroscopy, x-ray diffraction, optical microscopy, transmission electron microscopy, and sheet resistance measurements. It was found that the ion bombardment during deposition of Ta films influenced the microstructural characteristics, such as the packing density of grain boundaries, the grain size, and the preferred orientation of Ta grains. The Ta film deposited concurrent with 150 eV ion energy (0.13 mA/cm2) showed the increased packing density of grain boundaries, low resistivity, and preferred orientation. The densification of grain boundaries of the Ta barrier layer, followed by an increase of suicide formation temperature, significantly enhanced the barrier property of Ta in the Cu/Ta/Si system.
AB - The diffusion barrier properties of Ta, both as deposited without ion bombardment and deposited concurrent with ion energy, were investigated in the Cu/Ta/Si contact system using Auger electron spectroscopy, x-ray diffraction, optical microscopy, transmission electron microscopy, and sheet resistance measurements. It was found that the ion bombardment during deposition of Ta films influenced the microstructural characteristics, such as the packing density of grain boundaries, the grain size, and the preferred orientation of Ta grains. The Ta film deposited concurrent with 150 eV ion energy (0.13 mA/cm2) showed the increased packing density of grain boundaries, low resistivity, and preferred orientation. The densification of grain boundaries of the Ta barrier layer, followed by an increase of suicide formation temperature, significantly enhanced the barrier property of Ta in the Cu/Ta/Si system.
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U2 - 10.1149/1.1837684
DO - 10.1149/1.1837684
M3 - Article
VL - 144
SP - 1807
EP - 1812
JO - Journal of the Electrochemical Society
JF - Journal of the Electrochemical Society
SN - 0013-4651
IS - 5
ER -