The effectiveness of Ta prepared by ion-assisted deposition as a diffusion barrier between copper and silicon

Byoung Sun Kang, Sung Man Lee, Joon Seop Kwak, Dong Soo Yoon, Hong Koo Baik

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

The diffusion barrier properties of Ta, both as deposited without ion bombardment and deposited concurrent with ion energy, were investigated in the Cu/Ta/Si contact system using Auger electron spectroscopy, x-ray diffraction, optical microscopy, transmission electron microscopy, and sheet resistance measurements. It was found that the ion bombardment during deposition of Ta films influenced the microstructural characteristics, such as the packing density of grain boundaries, the grain size, and the preferred orientation of Ta grains. The Ta film deposited concurrent with 150 eV ion energy (0.13 mA/cm2) showed the increased packing density of grain boundaries, low resistivity, and preferred orientation. The densification of grain boundaries of the Ta barrier layer, followed by an increase of suicide formation temperature, significantly enhanced the barrier property of Ta in the Cu/Ta/Si system.

Original languageEnglish
Pages (from-to)1807-1812
Number of pages6
JournalJournal of the Electrochemical Society
Volume144
Issue number5
DOIs
Publication statusPublished - 1997 May

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Fingerprint Dive into the research topics of 'The effectiveness of Ta prepared by ion-assisted deposition as a diffusion barrier between copper and silicon'. Together they form a unique fingerprint.

  • Cite this