The effectiveness of Ta prepared by ion-assisted deposition as a diffusion barrier between copper and silicon

Byoung Sun Kang, Sung Man Lee, Joon Seop Kwak, Dong Soo Yoon, Hong Koo Baik

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

The diffusion barrier properties of Ta, both as deposited without ion bombardment and deposited concurrent with ion energy, were investigated in the Cu/Ta/Si contact system using Auger electron spectroscopy, x-ray diffraction, optical microscopy, transmission electron microscopy, and sheet resistance measurements. It was found that the ion bombardment during deposition of Ta films influenced the microstructural characteristics, such as the packing density of grain boundaries, the grain size, and the preferred orientation of Ta grains. The Ta film deposited concurrent with 150 eV ion energy (0.13 mA/cm2) showed the increased packing density of grain boundaries, low resistivity, and preferred orientation. The densification of grain boundaries of the Ta barrier layer, followed by an increase of suicide formation temperature, significantly enhanced the barrier property of Ta in the Cu/Ta/Si system.

Original languageEnglish
Pages (from-to)1807-1812
Number of pages6
JournalJournal of the Electrochemical Society
Volume144
Issue number5
DOIs
Publication statusPublished - 1997 Jan 1

Fingerprint

Diffusion barriers
Silicon
Copper
Grain boundaries
Ions
Ion bombardment
Sheet resistance
Auger electron spectroscopy
Densification
Crystal orientation
Optical microscopy
Diffraction
Transmission electron microscopy
X rays
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

Kang, Byoung Sun ; Lee, Sung Man ; Kwak, Joon Seop ; Yoon, Dong Soo ; Baik, Hong Koo. / The effectiveness of Ta prepared by ion-assisted deposition as a diffusion barrier between copper and silicon. In: Journal of the Electrochemical Society. 1997 ; Vol. 144, No. 5. pp. 1807-1812.
@article{37b7fb299a9242018e7c69a8a6bec1cc,
title = "The effectiveness of Ta prepared by ion-assisted deposition as a diffusion barrier between copper and silicon",
abstract = "The diffusion barrier properties of Ta, both as deposited without ion bombardment and deposited concurrent with ion energy, were investigated in the Cu/Ta/Si contact system using Auger electron spectroscopy, x-ray diffraction, optical microscopy, transmission electron microscopy, and sheet resistance measurements. It was found that the ion bombardment during deposition of Ta films influenced the microstructural characteristics, such as the packing density of grain boundaries, the grain size, and the preferred orientation of Ta grains. The Ta film deposited concurrent with 150 eV ion energy (0.13 mA/cm2) showed the increased packing density of grain boundaries, low resistivity, and preferred orientation. The densification of grain boundaries of the Ta barrier layer, followed by an increase of suicide formation temperature, significantly enhanced the barrier property of Ta in the Cu/Ta/Si system.",
author = "Kang, {Byoung Sun} and Lee, {Sung Man} and Kwak, {Joon Seop} and Yoon, {Dong Soo} and Baik, {Hong Koo}",
year = "1997",
month = "1",
day = "1",
doi = "10.1149/1.1837684",
language = "English",
volume = "144",
pages = "1807--1812",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "5",

}

The effectiveness of Ta prepared by ion-assisted deposition as a diffusion barrier between copper and silicon. / Kang, Byoung Sun; Lee, Sung Man; Kwak, Joon Seop; Yoon, Dong Soo; Baik, Hong Koo.

In: Journal of the Electrochemical Society, Vol. 144, No. 5, 01.01.1997, p. 1807-1812.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The effectiveness of Ta prepared by ion-assisted deposition as a diffusion barrier between copper and silicon

AU - Kang, Byoung Sun

AU - Lee, Sung Man

AU - Kwak, Joon Seop

AU - Yoon, Dong Soo

AU - Baik, Hong Koo

PY - 1997/1/1

Y1 - 1997/1/1

N2 - The diffusion barrier properties of Ta, both as deposited without ion bombardment and deposited concurrent with ion energy, were investigated in the Cu/Ta/Si contact system using Auger electron spectroscopy, x-ray diffraction, optical microscopy, transmission electron microscopy, and sheet resistance measurements. It was found that the ion bombardment during deposition of Ta films influenced the microstructural characteristics, such as the packing density of grain boundaries, the grain size, and the preferred orientation of Ta grains. The Ta film deposited concurrent with 150 eV ion energy (0.13 mA/cm2) showed the increased packing density of grain boundaries, low resistivity, and preferred orientation. The densification of grain boundaries of the Ta barrier layer, followed by an increase of suicide formation temperature, significantly enhanced the barrier property of Ta in the Cu/Ta/Si system.

AB - The diffusion barrier properties of Ta, both as deposited without ion bombardment and deposited concurrent with ion energy, were investigated in the Cu/Ta/Si contact system using Auger electron spectroscopy, x-ray diffraction, optical microscopy, transmission electron microscopy, and sheet resistance measurements. It was found that the ion bombardment during deposition of Ta films influenced the microstructural characteristics, such as the packing density of grain boundaries, the grain size, and the preferred orientation of Ta grains. The Ta film deposited concurrent with 150 eV ion energy (0.13 mA/cm2) showed the increased packing density of grain boundaries, low resistivity, and preferred orientation. The densification of grain boundaries of the Ta barrier layer, followed by an increase of suicide formation temperature, significantly enhanced the barrier property of Ta in the Cu/Ta/Si system.

UR - http://www.scopus.com/inward/record.url?scp=0031139284&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031139284&partnerID=8YFLogxK

U2 - 10.1149/1.1837684

DO - 10.1149/1.1837684

M3 - Article

VL - 144

SP - 1807

EP - 1812

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 5

ER -