The effects of active layer thickness in solution-processed HfInZnO TFTs

Woong Hee Jeong, Gun Hee Kim, Dong Lim Kim, Hyun Soo Shin, Hyun Jae Kim, Myung Kwan Ryu, Kyung Bae Park, Jong Baek Seon, Sang Yoon Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, the effects of active layer thickness in HfInZnO (HIZO) thin film transistors (TFTs) have been investigated for device optimization using solution process. Total carrier density and bulk resistance (Rbulk) of HIZO TFTs were considered for solution-processed HIZO TFTs optimization.

Original languageEnglish
Title of host publication10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010
Pages506-507
Number of pages2
Publication statusPublished - 2010
Event10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010 - Seoul, Korea, Republic of
Duration: 2010 Oct 112010 Oct 15

Publication series

NameProceedings of International Meeting on Information Display
ISSN (Print)1738-7558

Other

Other10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010
CountryKorea, Republic of
CitySeoul
Period10/10/1110/10/15

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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