We report the microstructure and electrical properties of CoSb3 legs on which Au, Pt, and Ti are deposited by ultra-high-vacuum (UHV) radio frequency (RF) sputtering. After annealing, an intermetallic compound (IMC) layer, approximately 320 nm thick, forms at the interface of CoSb 3/Ti. This layer plays a significant role as a diffusion barrier in a CoSb3 thermoelectric (TE) module. The IMC layer has little effect on the electrical properties of CoSb3/Ti. However, no IMC layers were observed in CoSb3/Au and CoSb3/Pt, where Au and Pt diffused into the CoSb3 leg to a great depth. Our results demonstrate that a Ti layer on a CoSb3 leg deposited by a sputtering system is effective to form the IMC layer, preventing further diffusion of Ti and giving rise to enhance the efficiency of CoSb3 TE modules.
Bibliographical noteFunding Information:
This work was supported by DAPA and ADD under the contract No. UC120037GD , the Priority Research Centers Program ( 2009-0093823 ), and the Pioneer Research Center Program ( 2010-0019313 ) through the National Research Foundation of Korea (NRF).
All Science Journal Classification (ASJC) codes
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys
- Materials Chemistry