The effects of diffusion barrier layers on the microstructural and electrical properties in CoSb3 thermoelectric modules

Byeongcheol Song, Seokhee Lee, Sungmee Cho, Min Jung Song, Soon Mok Choi, Won Seon Seo, Youngsoo Yoon, Wooyoung Lee

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We report the microstructure and electrical properties of CoSb3 legs on which Au, Pt, and Ti are deposited by ultra-high-vacuum (UHV) radio frequency (RF) sputtering. After annealing, an intermetallic compound (IMC) layer, approximately 320 nm thick, forms at the interface of CoSb 3/Ti. This layer plays a significant role as a diffusion barrier in a CoSb3 thermoelectric (TE) module. The IMC layer has little effect on the electrical properties of CoSb3/Ti. However, no IMC layers were observed in CoSb3/Au and CoSb3/Pt, where Au and Pt diffused into the CoSb3 leg to a great depth. Our results demonstrate that a Ti layer on a CoSb3 leg deposited by a sputtering system is effective to form the IMC layer, preventing further diffusion of Ti and giving rise to enhance the efficiency of CoSb3 TE modules.

Original languageEnglish
Pages (from-to)160-162
Number of pages3
JournalJournal of Alloys and Compounds
Volume617
DOIs
Publication statusPublished - 2014 Dec 25

Fingerprint

Diffusion barriers
Intermetallics
Electric properties
Sputtering
Ultrahigh vacuum
Annealing
Microstructure

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Cite this

Song, Byeongcheol ; Lee, Seokhee ; Cho, Sungmee ; Song, Min Jung ; Choi, Soon Mok ; Seo, Won Seon ; Yoon, Youngsoo ; Lee, Wooyoung. / The effects of diffusion barrier layers on the microstructural and electrical properties in CoSb3 thermoelectric modules. In: Journal of Alloys and Compounds. 2014 ; Vol. 617. pp. 160-162.
@article{2e7a6b1a6ee4471eae5bab949c89aa4c,
title = "The effects of diffusion barrier layers on the microstructural and electrical properties in CoSb3 thermoelectric modules",
abstract = "We report the microstructure and electrical properties of CoSb3 legs on which Au, Pt, and Ti are deposited by ultra-high-vacuum (UHV) radio frequency (RF) sputtering. After annealing, an intermetallic compound (IMC) layer, approximately 320 nm thick, forms at the interface of CoSb 3/Ti. This layer plays a significant role as a diffusion barrier in a CoSb3 thermoelectric (TE) module. The IMC layer has little effect on the electrical properties of CoSb3/Ti. However, no IMC layers were observed in CoSb3/Au and CoSb3/Pt, where Au and Pt diffused into the CoSb3 leg to a great depth. Our results demonstrate that a Ti layer on a CoSb3 leg deposited by a sputtering system is effective to form the IMC layer, preventing further diffusion of Ti and giving rise to enhance the efficiency of CoSb3 TE modules.",
author = "Byeongcheol Song and Seokhee Lee and Sungmee Cho and Song, {Min Jung} and Choi, {Soon Mok} and Seo, {Won Seon} and Youngsoo Yoon and Wooyoung Lee",
year = "2014",
month = "12",
day = "25",
doi = "10.1016/j.jallcom.2014.07.066",
language = "English",
volume = "617",
pages = "160--162",
journal = "Journal of Alloys and Compounds",
issn = "0925-8388",
publisher = "Elsevier BV",

}

The effects of diffusion barrier layers on the microstructural and electrical properties in CoSb3 thermoelectric modules. / Song, Byeongcheol; Lee, Seokhee; Cho, Sungmee; Song, Min Jung; Choi, Soon Mok; Seo, Won Seon; Yoon, Youngsoo; Lee, Wooyoung.

In: Journal of Alloys and Compounds, Vol. 617, 25.12.2014, p. 160-162.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The effects of diffusion barrier layers on the microstructural and electrical properties in CoSb3 thermoelectric modules

AU - Song, Byeongcheol

AU - Lee, Seokhee

AU - Cho, Sungmee

AU - Song, Min Jung

AU - Choi, Soon Mok

AU - Seo, Won Seon

AU - Yoon, Youngsoo

AU - Lee, Wooyoung

PY - 2014/12/25

Y1 - 2014/12/25

N2 - We report the microstructure and electrical properties of CoSb3 legs on which Au, Pt, and Ti are deposited by ultra-high-vacuum (UHV) radio frequency (RF) sputtering. After annealing, an intermetallic compound (IMC) layer, approximately 320 nm thick, forms at the interface of CoSb 3/Ti. This layer plays a significant role as a diffusion barrier in a CoSb3 thermoelectric (TE) module. The IMC layer has little effect on the electrical properties of CoSb3/Ti. However, no IMC layers were observed in CoSb3/Au and CoSb3/Pt, where Au and Pt diffused into the CoSb3 leg to a great depth. Our results demonstrate that a Ti layer on a CoSb3 leg deposited by a sputtering system is effective to form the IMC layer, preventing further diffusion of Ti and giving rise to enhance the efficiency of CoSb3 TE modules.

AB - We report the microstructure and electrical properties of CoSb3 legs on which Au, Pt, and Ti are deposited by ultra-high-vacuum (UHV) radio frequency (RF) sputtering. After annealing, an intermetallic compound (IMC) layer, approximately 320 nm thick, forms at the interface of CoSb 3/Ti. This layer plays a significant role as a diffusion barrier in a CoSb3 thermoelectric (TE) module. The IMC layer has little effect on the electrical properties of CoSb3/Ti. However, no IMC layers were observed in CoSb3/Au and CoSb3/Pt, where Au and Pt diffused into the CoSb3 leg to a great depth. Our results demonstrate that a Ti layer on a CoSb3 leg deposited by a sputtering system is effective to form the IMC layer, preventing further diffusion of Ti and giving rise to enhance the efficiency of CoSb3 TE modules.

UR - http://www.scopus.com/inward/record.url?scp=84906558529&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84906558529&partnerID=8YFLogxK

U2 - 10.1016/j.jallcom.2014.07.066

DO - 10.1016/j.jallcom.2014.07.066

M3 - Article

VL - 617

SP - 160

EP - 162

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

SN - 0925-8388

ER -