The effects of dual-active-layer modulation on a low-temperature solution-processed oxide thin-film transistor

Woong Hee Jeong, Kyung Min Kim, Dong Lim Kim, You Seung Rim, Hyun Jae Kim

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

We applied dual-active-layer (DAL) modulation to solution-processed AlInZnO (AIZO)/InZnO (IZO) DAL thin-film transistors (TFTs) to realize high performance at 350 °C. The electrical characteristics of the DAL TFTs were affected by the In-versus-Zn ratio of each channel and the thickness of the IZO. This caused a difference in the carrier concentrations of the two channels and also changed the energy barrier height at the junction between the channels. A DAL TFT with optimized carrier concentration and energy barrier height yielded a competitive field-effect mobility of 5.62 cm 2 /V · s, a high on/off ratio of 9.0 × 10 6 , and a steep subthreshold swing of 0.53 V/dec.

Original languageEnglish
Article number6204080
Pages (from-to)2149-2152
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume59
Issue number8
DOIs
Publication statusPublished - 2012 May 29

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Thin film transistors
Oxide films
Energy barriers
Modulation
Carrier concentration
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Jeong, Woong Hee ; Kim, Kyung Min ; Kim, Dong Lim ; Rim, You Seung ; Kim, Hyun Jae. / The effects of dual-active-layer modulation on a low-temperature solution-processed oxide thin-film transistor. In: IEEE Transactions on Electron Devices. 2012 ; Vol. 59, No. 8. pp. 2149-2152.
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The effects of dual-active-layer modulation on a low-temperature solution-processed oxide thin-film transistor. / Jeong, Woong Hee; Kim, Kyung Min; Kim, Dong Lim; Rim, You Seung; Kim, Hyun Jae.

In: IEEE Transactions on Electron Devices, Vol. 59, No. 8, 6204080, 29.05.2012, p. 2149-2152.

Research output: Contribution to journalArticle

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