Abstract
We applied dual-active-layer (DAL) modulation to solution-processed AlInZnO (AIZO)/InZnO (IZO) DAL thin-film transistors (TFTs) to realize high performance at 350 °C. The electrical characteristics of the DAL TFTs were affected by the In-versus-Zn ratio of each channel and the thickness of the IZO. This caused a difference in the carrier concentrations of the two channels and also changed the energy barrier height at the junction between the channels. A DAL TFT with optimized carrier concentration and energy barrier height yielded a competitive field-effect mobility of 5.62 cm 2/V · s, a high on/off ratio of 9.0 × 10 6, and a steep subthreshold swing of 0.53 V/dec.
| Original language | English |
|---|---|
| Article number | 6204080 |
| Pages (from-to) | 2149-2152 |
| Number of pages | 4 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 59 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2012 |
Bibliographical note
Funding Information:Manuscript received January 16, 2012; revised April 9, 2012; accepted April 27, 2012. Date of publication May 23, 2012; date of current version July 19, 2012. This work was supported by the National Research Foundation of Korea Grant funded by the Korean Ministry of Education, Science and Technology [no. 2011-0028819]. The review of this paper was arranged by Editor A. C. Arias.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering