Abstract
Self-patterned PZT films on Pt/Ti/SiO2/Si substrate with different behavior of shrinkage were obtained by varying the molar concentrations of stock solution. PZT film showing a minimum shrinkage was prepared with 0.6M-PZT stock solution. The physical and electrical properties of self-patterned PZT film with 120 nm thick were compared with the film with 240 nm thick. Both self-patterned PZT films showed good properties regardless of the film thickness. With 120 nm thick self patterned PZT film, microstructure with fine grains and (111) preferred orientation were more important. Remnant polarization was relatively lower than 240 nm thick film due to the small film thickness.
| Original language | English |
|---|---|
| Pages (from-to) | 335-340 |
| Number of pages | 6 |
| Journal | Ferroelectrics |
| Volume | 263 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2001 Dec 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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The effects of film thickness of ortho-nitrobenzaldehyde modified PZT on the crystallization and ferroelectric properties. / Ha, Su Min; Kim, Woo Sik; Park, Hyung-Ho; Kim, Tae Song.
In: Ferroelectrics, Vol. 263, No. 1, 01.12.2001, p. 335-340.Research output: Contribution to journal › Article
TY - JOUR
T1 - The effects of film thickness of ortho-nitrobenzaldehyde modified PZT on the crystallization and ferroelectric properties
AU - Ha, Su Min
AU - Kim, Woo Sik
AU - Park, Hyung-Ho
AU - Kim, Tae Song
PY - 2001/12/1
Y1 - 2001/12/1
N2 - Self-patterned PZT films on Pt/Ti/SiO2/Si substrate with different behavior of shrinkage were obtained by varying the molar concentrations of stock solution. PZT film showing a minimum shrinkage was prepared with 0.6M-PZT stock solution. The physical and electrical properties of self-patterned PZT film with 120 nm thick were compared with the film with 240 nm thick. Both self-patterned PZT films showed good properties regardless of the film thickness. With 120 nm thick self patterned PZT film, microstructure with fine grains and (111) preferred orientation were more important. Remnant polarization was relatively lower than 240 nm thick film due to the small film thickness.
AB - Self-patterned PZT films on Pt/Ti/SiO2/Si substrate with different behavior of shrinkage were obtained by varying the molar concentrations of stock solution. PZT film showing a minimum shrinkage was prepared with 0.6M-PZT stock solution. The physical and electrical properties of self-patterned PZT film with 120 nm thick were compared with the film with 240 nm thick. Both self-patterned PZT films showed good properties regardless of the film thickness. With 120 nm thick self patterned PZT film, microstructure with fine grains and (111) preferred orientation were more important. Remnant polarization was relatively lower than 240 nm thick film due to the small film thickness.
UR - http://www.scopus.com/inward/record.url?scp=0141663434&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0141663434&partnerID=8YFLogxK
U2 - 10.1080/00150190108225221
DO - 10.1080/00150190108225221
M3 - Article
AN - SCOPUS:0141663434
VL - 263
SP - 335
EP - 340
JO - Ferroelectrics
JF - Ferroelectrics
SN - 0015-0193
IS - 1
ER -