The effects of Ge composition and Si cap thickness on hot carrier reliability of Si/Sil-xGex/Si p-MOSFETs with high-K/metal gate

W. Y. Loh; P. Majhi; S. H. Lee; J. W. Oh; B. Sassman; C. Young; G. Bersuker; B. J. Cho; C. S. Park; C. Y. Kang; P. Kirsch; B. H. Lee; H. R. Harris; H. H. Tseng; R. Jammy

doi:10.1109/VLSIT.2008.4588562

The effects of Ge composition and Si cap thickness on hot carrier reliability of Si/Si_l-_xGe_x/Si p-MOSFETs with high-K/metal gate

W. Y. Loh, P. Majhi, S. H. Lee, J. W. Oh, B. Sassman, C. Young, G. Bersuker, B. J. Cho, C. S. Park, C. Y. Kang, P. Kirsch, B. H. Lee, H. R. Harris, H. H. Tseng, R. Jammy

School of Integrated Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

9 Citations (Scopus)

Abstract

We report on new observations of hot carrier (HC) degradation in strained Si/Si_l-xGe_x(x =0.2 to 0.5) p-MOSFETs. By using low voltage current-voltage measurement coupled with carrier separation, we are able, for the first time, to easily distinguish the energy distribution of the interface traps. High-K dielectrics on SiGe p-channel show higher interface traps generation located close to conduction band under channel hot carrier stressing and uniform interface trap under drain avalanche hot carrier stressing, both of which can be mitigated by increasing Ge% in the Si/SiGe channel. Detailed study on Si capping layer (=≤ 20Å) shows good immunity against Drain Avalanche Hot Carrier but is degraded under Channel Hot Carrier stressing. The results suggest that higher Ge% and thinner Si cap is preferably for hot carrier reliability for low voltage application with 10yrs lifetime at operating voltage of -0.85 V.

Original language	English
Title of host publication	2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT
Pages	56-57
Number of pages	2
DOIs	https://doi.org/10.1109/VLSIT.2008.4588562
Publication status	Published - 2008
Event	2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT - Honolulu, HI, United States Duration: 2008 Jun 17 → 2008 Jun 19

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)	0743-1562

Other

Other	2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT
Country/Territory	United States
City	Honolulu, HI
Period	08/6/17 → 08/6/19

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/VLSIT.2008.4588562

Cite this

Loh, W. Y., Majhi, P., Lee, S. H., Oh, J. W., Sassman, B., Young, C., Bersuker, G., Cho, B. J., Park, C. S., Kang, C. Y., Kirsch, P., Lee, B. H., Harris, H. R., Tseng, H. H., & Jammy, R. (2008). The effects of Ge composition and Si cap thickness on hot carrier reliability of Si/Si_l-_xGe_x/Si p-MOSFETs with high-K/metal gate. In 2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT (pp. 56-57). [4588562] (Digest of Technical Papers - Symposium on VLSI Technology). https://doi.org/10.1109/VLSIT.2008.4588562

Loh, W. Y. ; Majhi, P. ; Lee, S. H. ; Oh, J. W. ; Sassman, B. ; Young, C. ; Bersuker, G. ; Cho, B. J. ; Park, C. S. ; Kang, C. Y. ; Kirsch, P. ; Lee, B. H. ; Harris, H. R. ; Tseng, H. H. ; Jammy, R. / The effects of Ge composition and Si cap thickness on hot carrier reliability of Si/Si_l-_xGe_x/Si p-MOSFETs with high-K/metal gate. 2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT. 2008. pp. 56-57 (Digest of Technical Papers - Symposium on VLSI Technology).

@inproceedings{6d7734fbfd1c42649507af2d3f745c92,

title = "The effects of Ge composition and Si cap thickness on hot carrier reliability of Si/Sil-xGex/Si p-MOSFETs with high-K/metal gate",

abstract = "We report on new observations of hot carrier (HC) degradation in strained Si/Sil-xGex(x =0.2 to 0.5) p-MOSFETs. By using low voltage current-voltage measurement coupled with carrier separation, we are able, for the first time, to easily distinguish the energy distribution of the interface traps. High-K dielectrics on SiGe p-channel show higher interface traps generation located close to conduction band under channel hot carrier stressing and uniform interface trap under drain avalanche hot carrier stressing, both of which can be mitigated by increasing Ge% in the Si/SiGe channel. Detailed study on Si capping layer (=≤ 20{\AA}) shows good immunity against Drain Avalanche Hot Carrier but is degraded under Channel Hot Carrier stressing. The results suggest that higher Ge% and thinner Si cap is preferably for hot carrier reliability for low voltage application with 10yrs lifetime at operating voltage of -0.85 V.",

author = "Loh, {W. Y.} and P. Majhi and Lee, {S. H.} and Oh, {J. W.} and B. Sassman and C. Young and G. Bersuker and Cho, {B. J.} and Park, {C. S.} and Kang, {C. Y.} and P. Kirsch and Lee, {B. H.} and Harris, {H. R.} and Tseng, {H. H.} and R. Jammy",

year = "2008",

doi = "10.1109/VLSIT.2008.4588562",

language = "English",

isbn = "9781424418053",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

pages = "56--57",

booktitle = "2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT",

note = "2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT ; Conference date: 17-06-2008 Through 19-06-2008",

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Loh, WY, Majhi, P, Lee, SH, Oh, JW, Sassman, B, Young, C, Bersuker, G, Cho, BJ, Park, CS, Kang, CY, Kirsch, P, Lee, BH, Harris, HR, Tseng, HH & Jammy, R 2008, The effects of Ge composition and Si cap thickness on hot carrier reliability of Si/Si_l-_xGe_x/Si p-MOSFETs with high-K/metal gate. in 2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT., 4588562, Digest of Technical Papers - Symposium on VLSI Technology, pp. 56-57, 2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT, Honolulu, HI, United States, 08/6/17. https://doi.org/10.1109/VLSIT.2008.4588562

The effects of Ge composition and Si cap thickness on hot carrier reliability of Si/Si_l-_xGe_x/Si p-MOSFETs with high-K/metal gate. / Loh, W. Y.; Majhi, P.; Lee, S. H.; Oh, J. W.; Sassman, B.; Young, C.; Bersuker, G.; Cho, B. J.; Park, C. S.; Kang, C. Y.; Kirsch, P.; Lee, B. H.; Harris, H. R.; Tseng, H. H.; Jammy, R.

2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT. 2008. p. 56-57 4588562 (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Loh, W. Y.

AU - Majhi, P.

AU - Lee, S. H.

AU - Oh, J. W.

AU - Sassman, B.

AU - Young, C.

AU - Bersuker, G.

AU - Cho, B. J.

AU - Park, C. S.

AU - Kang, C. Y.

AU - Kirsch, P.

AU - Lee, B. H.

AU - Harris, H. R.

AU - Tseng, H. H.

AU - Jammy, R.

PY - 2008

Y1 - 2008

N2 - We report on new observations of hot carrier (HC) degradation in strained Si/Sil-xGex(x =0.2 to 0.5) p-MOSFETs. By using low voltage current-voltage measurement coupled with carrier separation, we are able, for the first time, to easily distinguish the energy distribution of the interface traps. High-K dielectrics on SiGe p-channel show higher interface traps generation located close to conduction band under channel hot carrier stressing and uniform interface trap under drain avalanche hot carrier stressing, both of which can be mitigated by increasing Ge% in the Si/SiGe channel. Detailed study on Si capping layer (=≤ 20Å) shows good immunity against Drain Avalanche Hot Carrier but is degraded under Channel Hot Carrier stressing. The results suggest that higher Ge% and thinner Si cap is preferably for hot carrier reliability for low voltage application with 10yrs lifetime at operating voltage of -0.85 V.

AB - We report on new observations of hot carrier (HC) degradation in strained Si/Sil-xGex(x =0.2 to 0.5) p-MOSFETs. By using low voltage current-voltage measurement coupled with carrier separation, we are able, for the first time, to easily distinguish the energy distribution of the interface traps. High-K dielectrics on SiGe p-channel show higher interface traps generation located close to conduction band under channel hot carrier stressing and uniform interface trap under drain avalanche hot carrier stressing, both of which can be mitigated by increasing Ge% in the Si/SiGe channel. Detailed study on Si capping layer (=≤ 20Å) shows good immunity against Drain Avalanche Hot Carrier but is degraded under Channel Hot Carrier stressing. The results suggest that higher Ge% and thinner Si cap is preferably for hot carrier reliability for low voltage application with 10yrs lifetime at operating voltage of -0.85 V.

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M3 - Conference contribution

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T3 - Digest of Technical Papers - Symposium on VLSI Technology

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EP - 57

BT - 2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT

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Loh WY, Majhi P, Lee SH, Oh JW, Sassman B, Young C et al. The effects of Ge composition and Si cap thickness on hot carrier reliability of Si/Si_l-_xGe_x/Si p-MOSFETs with high-K/metal gate. In 2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT. 2008. p. 56-57. 4588562. (Digest of Technical Papers - Symposium on VLSI Technology). https://doi.org/10.1109/VLSIT.2008.4588562