The effects of initial gas composition and pressure on the growth behavior of CVD SiC films

Young Jin Lee, Doo Jin Choi

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The effects of pressure from 5 torr to 40 torr and the alteration of diluent gas species on the growth rate and structure of deposits have been studied. The experimental results showed that the deposition rate increased with increasing total pressure for a H2 diluent system and decreased for N2. The reactant depletion effect increased especially with an ambient H2 diluent gas. As the diluent gas was added, the deposition rate decreased parabolically, especially for H2 ambient. The theoretical relation between deposition rate and partial pressures of methyltrichlorosilane (MTS) and H2 was in a good accordance with experimental results.

Original languageEnglish
Pages (from-to)222-227
Number of pages6
JournalJournal of Ceramic Processing Research
Volume3
Issue number3 PART 2
Publication statusPublished - 2002 Dec 1

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Deposition rates
Chemical vapor deposition
Gases
Chemical analysis
Partial pressure
Deposits

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites

Cite this

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The effects of initial gas composition and pressure on the growth behavior of CVD SiC films. / Lee, Young Jin; Choi, Doo Jin.

In: Journal of Ceramic Processing Research, Vol. 3, No. 3 PART 2, 01.12.2002, p. 222-227.

Research output: Contribution to journalArticle

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