The effects of post-annealing on the performance of ZnO thin film transistors

Seokhwan Bang, Seungjun Lee, Joohyun Park, Soyeon Park, Youngbin Ko, Changhwan Choi, Hojung Chang, Hyung-Ho Park, Hyeongtag Jeon

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

In this study, we investigated the effects of a post-annealing process on the performance and stability of zinc oxide thin film transistors fabricated by atomic layer deposition. After the post-annealing process in ambient air at 250 °C for 2 h, the value of the saturation mobility increased from 1.2 to 1.8 cm/Vs, the subthreshold swing decreased from 0.53 to 0.34 V/decade, and the Ion/Ioff ratio increased from 3.1 × 106 to 1.7 × 107. The positive bias stability was also enhanced after post-annealing. These results are related to the formation of another phase in which the difference of enthalpy between the semiconductor material and contact metal electrode causes the carrier concentration at the metal/semiconductor interface to increase, leading to decreased contact resistivity. Additionally, internal modification of the semiconductor/dielectric interface and/or improving the semiconductor structure, which is related to a change in the oxidation state of Zn through the incorporation of oxygen and/or hydroxide, can result in improved device performance.

Original languageEnglish
Pages (from-to)8109-8113
Number of pages5
JournalThin Solid Films
Volume519
Issue number22
DOIs
Publication statusPublished - 2011 Sep 1

Fingerprint

Thin film transistors
transistors
Annealing
Semiconductor materials
annealing
thin films
Metals
Zinc Oxide
Atomic layer deposition
atomic layer epitaxy
Zinc oxide
zinc oxides
metals
hydroxides
Oxide films
Carrier concentration
electric contacts
Enthalpy
enthalpy
Ions

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Bang, S., Lee, S., Park, J., Park, S., Ko, Y., Choi, C., ... Jeon, H. (2011). The effects of post-annealing on the performance of ZnO thin film transistors. Thin Solid Films, 519(22), 8109-8113. https://doi.org/10.1016/j.tsf.2011.05.048
Bang, Seokhwan ; Lee, Seungjun ; Park, Joohyun ; Park, Soyeon ; Ko, Youngbin ; Choi, Changhwan ; Chang, Hojung ; Park, Hyung-Ho ; Jeon, Hyeongtag. / The effects of post-annealing on the performance of ZnO thin film transistors. In: Thin Solid Films. 2011 ; Vol. 519, No. 22. pp. 8109-8113.
@article{24135b03e6f44e1b94ee6ff69ad32e79,
title = "The effects of post-annealing on the performance of ZnO thin film transistors",
abstract = "In this study, we investigated the effects of a post-annealing process on the performance and stability of zinc oxide thin film transistors fabricated by atomic layer deposition. After the post-annealing process in ambient air at 250 °C for 2 h, the value of the saturation mobility increased from 1.2 to 1.8 cm/Vs, the subthreshold swing decreased from 0.53 to 0.34 V/decade, and the Ion/Ioff ratio increased from 3.1 × 106 to 1.7 × 107. The positive bias stability was also enhanced after post-annealing. These results are related to the formation of another phase in which the difference of enthalpy between the semiconductor material and contact metal electrode causes the carrier concentration at the metal/semiconductor interface to increase, leading to decreased contact resistivity. Additionally, internal modification of the semiconductor/dielectric interface and/or improving the semiconductor structure, which is related to a change in the oxidation state of Zn through the incorporation of oxygen and/or hydroxide, can result in improved device performance.",
author = "Seokhwan Bang and Seungjun Lee and Joohyun Park and Soyeon Park and Youngbin Ko and Changhwan Choi and Hojung Chang and Hyung-Ho Park and Hyeongtag Jeon",
year = "2011",
month = "9",
day = "1",
doi = "10.1016/j.tsf.2011.05.048",
language = "English",
volume = "519",
pages = "8109--8113",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "22",

}

Bang, S, Lee, S, Park, J, Park, S, Ko, Y, Choi, C, Chang, H, Park, H-H & Jeon, H 2011, 'The effects of post-annealing on the performance of ZnO thin film transistors', Thin Solid Films, vol. 519, no. 22, pp. 8109-8113. https://doi.org/10.1016/j.tsf.2011.05.048

The effects of post-annealing on the performance of ZnO thin film transistors. / Bang, Seokhwan; Lee, Seungjun; Park, Joohyun; Park, Soyeon; Ko, Youngbin; Choi, Changhwan; Chang, Hojung; Park, Hyung-Ho; Jeon, Hyeongtag.

In: Thin Solid Films, Vol. 519, No. 22, 01.09.2011, p. 8109-8113.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The effects of post-annealing on the performance of ZnO thin film transistors

AU - Bang, Seokhwan

AU - Lee, Seungjun

AU - Park, Joohyun

AU - Park, Soyeon

AU - Ko, Youngbin

AU - Choi, Changhwan

AU - Chang, Hojung

AU - Park, Hyung-Ho

AU - Jeon, Hyeongtag

PY - 2011/9/1

Y1 - 2011/9/1

N2 - In this study, we investigated the effects of a post-annealing process on the performance and stability of zinc oxide thin film transistors fabricated by atomic layer deposition. After the post-annealing process in ambient air at 250 °C for 2 h, the value of the saturation mobility increased from 1.2 to 1.8 cm/Vs, the subthreshold swing decreased from 0.53 to 0.34 V/decade, and the Ion/Ioff ratio increased from 3.1 × 106 to 1.7 × 107. The positive bias stability was also enhanced after post-annealing. These results are related to the formation of another phase in which the difference of enthalpy between the semiconductor material and contact metal electrode causes the carrier concentration at the metal/semiconductor interface to increase, leading to decreased contact resistivity. Additionally, internal modification of the semiconductor/dielectric interface and/or improving the semiconductor structure, which is related to a change in the oxidation state of Zn through the incorporation of oxygen and/or hydroxide, can result in improved device performance.

AB - In this study, we investigated the effects of a post-annealing process on the performance and stability of zinc oxide thin film transistors fabricated by atomic layer deposition. After the post-annealing process in ambient air at 250 °C for 2 h, the value of the saturation mobility increased from 1.2 to 1.8 cm/Vs, the subthreshold swing decreased from 0.53 to 0.34 V/decade, and the Ion/Ioff ratio increased from 3.1 × 106 to 1.7 × 107. The positive bias stability was also enhanced after post-annealing. These results are related to the formation of another phase in which the difference of enthalpy between the semiconductor material and contact metal electrode causes the carrier concentration at the metal/semiconductor interface to increase, leading to decreased contact resistivity. Additionally, internal modification of the semiconductor/dielectric interface and/or improving the semiconductor structure, which is related to a change in the oxidation state of Zn through the incorporation of oxygen and/or hydroxide, can result in improved device performance.

UR - http://www.scopus.com/inward/record.url?scp=80052128564&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80052128564&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2011.05.048

DO - 10.1016/j.tsf.2011.05.048

M3 - Article

AN - SCOPUS:80052128564

VL - 519

SP - 8109

EP - 8113

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 22

ER -