The effects of postannealing treatment in forming gas on low-k SiOC(H) film

Seung Han Park, Hyun Jae Kim, Mann-Ho Cho, Dae Hong Ko, Hyunchul Sohn, J. H. Hahn, D. H. Lee, Y. S. Kwon, S. Y. Park, M. S. Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The effects of postannealing treatment in ambient forming gas (10% H 2:90% N2) on low- k SiOC(H) films deposited by plasma-enhanced chemical vapor deposition were investigated. The use of SiOC(H) films has certain advantages due to the presence of alkyl groups in the film, which result in improved hardness properties, compared with previously reported low- k materials. Metal-oxide-semiconductor capacitance-voltage measurements at 100 kHz indicated that the relative dielectric constant (k -value) of the as-grown film was approximately 2.4. When rapid thermal annealing (RTA) temperatures of up to 500°C were used, the Si-O-C bonds were nearly maintained when the annealing was conducted using an ambient of forming gas, whereas they substantially decreased in an ambient of N2 gas. The decrease in Si-O-C bond content results in an increase in k-value. In the film that underwent an RTA treatment at 600°C, the alkyl groups of the film were released and the Si-O network was enhanced in both ambient gases, which has a critical effect on the change in k-value.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume157
Issue number8
DOIs
Publication statusPublished - 2010 Jul 23

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Gases
Rapid thermal annealing
Capacitance measurement
Voltage measurement
Plasma enhanced chemical vapor deposition
Permittivity
Metals
Hardness
Annealing
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

@article{4e4cea32901640a9bce6e125a34fc94b,
title = "The effects of postannealing treatment in forming gas on low-k SiOC(H) film",
abstract = "The effects of postannealing treatment in ambient forming gas (10{\%} H 2:90{\%} N2) on low- k SiOC(H) films deposited by plasma-enhanced chemical vapor deposition were investigated. The use of SiOC(H) films has certain advantages due to the presence of alkyl groups in the film, which result in improved hardness properties, compared with previously reported low- k materials. Metal-oxide-semiconductor capacitance-voltage measurements at 100 kHz indicated that the relative dielectric constant (k -value) of the as-grown film was approximately 2.4. When rapid thermal annealing (RTA) temperatures of up to 500°C were used, the Si-O-C bonds were nearly maintained when the annealing was conducted using an ambient of forming gas, whereas they substantially decreased in an ambient of N2 gas. The decrease in Si-O-C bond content results in an increase in k-value. In the film that underwent an RTA treatment at 600°C, the alkyl groups of the film were released and the Si-O network was enhanced in both ambient gases, which has a critical effect on the change in k-value.",
author = "Park, {Seung Han} and Kim, {Hyun Jae} and Mann-Ho Cho and Ko, {Dae Hong} and Hyunchul Sohn and Hahn, {J. H.} and Lee, {D. H.} and Kwon, {Y. S.} and Park, {S. Y.} and Kim, {M. S.}",
year = "2010",
month = "7",
day = "23",
doi = "10.1149/1.3439670",
language = "English",
volume = "157",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "8",

}

The effects of postannealing treatment in forming gas on low-k SiOC(H) film. / Park, Seung Han; Kim, Hyun Jae; Cho, Mann-Ho; Ko, Dae Hong; Sohn, Hyunchul; Hahn, J. H.; Lee, D. H.; Kwon, Y. S.; Park, S. Y.; Kim, M. S.

In: Journal of the Electrochemical Society, Vol. 157, No. 8, 23.07.2010.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The effects of postannealing treatment in forming gas on low-k SiOC(H) film

AU - Park, Seung Han

AU - Kim, Hyun Jae

AU - Cho, Mann-Ho

AU - Ko, Dae Hong

AU - Sohn, Hyunchul

AU - Hahn, J. H.

AU - Lee, D. H.

AU - Kwon, Y. S.

AU - Park, S. Y.

AU - Kim, M. S.

PY - 2010/7/23

Y1 - 2010/7/23

N2 - The effects of postannealing treatment in ambient forming gas (10% H 2:90% N2) on low- k SiOC(H) films deposited by plasma-enhanced chemical vapor deposition were investigated. The use of SiOC(H) films has certain advantages due to the presence of alkyl groups in the film, which result in improved hardness properties, compared with previously reported low- k materials. Metal-oxide-semiconductor capacitance-voltage measurements at 100 kHz indicated that the relative dielectric constant (k -value) of the as-grown film was approximately 2.4. When rapid thermal annealing (RTA) temperatures of up to 500°C were used, the Si-O-C bonds were nearly maintained when the annealing was conducted using an ambient of forming gas, whereas they substantially decreased in an ambient of N2 gas. The decrease in Si-O-C bond content results in an increase in k-value. In the film that underwent an RTA treatment at 600°C, the alkyl groups of the film were released and the Si-O network was enhanced in both ambient gases, which has a critical effect on the change in k-value.

AB - The effects of postannealing treatment in ambient forming gas (10% H 2:90% N2) on low- k SiOC(H) films deposited by plasma-enhanced chemical vapor deposition were investigated. The use of SiOC(H) films has certain advantages due to the presence of alkyl groups in the film, which result in improved hardness properties, compared with previously reported low- k materials. Metal-oxide-semiconductor capacitance-voltage measurements at 100 kHz indicated that the relative dielectric constant (k -value) of the as-grown film was approximately 2.4. When rapid thermal annealing (RTA) temperatures of up to 500°C were used, the Si-O-C bonds were nearly maintained when the annealing was conducted using an ambient of forming gas, whereas they substantially decreased in an ambient of N2 gas. The decrease in Si-O-C bond content results in an increase in k-value. In the film that underwent an RTA treatment at 600°C, the alkyl groups of the film were released and the Si-O network was enhanced in both ambient gases, which has a critical effect on the change in k-value.

UR - http://www.scopus.com/inward/record.url?scp=77954690733&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77954690733&partnerID=8YFLogxK

U2 - 10.1149/1.3439670

DO - 10.1149/1.3439670

M3 - Article

AN - SCOPUS:77954690733

VL - 157

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 8

ER -