The effects of preoxidation by N2O plasma on the silicon dioxide as a gate insulator of poly-Si thin film transistor on a flexible substrate application

Park Joong-Hyun; Han Sang-Myeon; Park Sang-Geun; Choi Sung-Hwan; Lee Woo-Chul; Jung Ji-Sim; Kwon Jang-Yeon; Han Min-Koo

The effects of preoxidation by N₂O plasma on the silicon dioxide as a gate insulator of poly-Si thin film transistor on a flexible substrate application

Park Joong-Hyun, Han Sang-Myeon, Park Sang-Geun, Choi Sung-Hwan, Lee Woo-Chul, Jung Ji-Sim, Kwon Jang-Yeon, Han Min-Koo

School of Integrated Technology

Research output: Contribution to conference › Paper › peer-review

Abstract

In order to improve the SiO₂/po/y-Si interface characteristics, we have investigated the interface treatment on a flexible substrate application. The preoxidation by N₂O plasma reduces the transition layer, which is deposited during the initial growth stage, between poly-Si and SiO₂. The preoxidation by N₂O plasma was employed prior to SiO₂ deposition. We have investigated the new device for electrical characteristics on the SiO₂/po/y-Si. The C-V characteristics of SiO₂ by N₂O plasma irradiation were considerably improved due to the decrease of interface defect densities. The B-V characteristics are also improved from 0.7 MVIcm² to 2.4 MVIcm² by the preoxidation.

Original language	English
Pages	743-746
Number of pages	4
Publication status	Published - 2006
Event	13th International Display Workshops, IDW '06 - Otsu, Japan Duration: 2006 Dec 6 → 2006 Dec 6

Other

Other	13th International Display Workshops, IDW '06
Country/Territory	Japan
City	Otsu
Period	06/12/6 → 06/12/6

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Radiology Nuclear Medicine and imaging
Atomic and Molecular Physics, and Optics

Cite this

Joong-Hyun, Park ; Sang-Myeon, Han ; Sang-Geun, Park ; Sung-Hwan, Choi ; Woo-Chul, Lee ; Ji-Sim, Jung ; Jang-Yeon, Kwon ; Min-Koo, Han. / The effects of preoxidation by N₂O plasma on the silicon dioxide as a gate insulator of poly-Si thin film transistor on a flexible substrate application. Paper presented at 13th International Display Workshops, IDW '06, Otsu, Japan.4 p.

@conference{a83d95d46713411aae34da194b92a1ff,

title = "The effects of preoxidation by N2O plasma on the silicon dioxide as a gate insulator of poly-Si thin film transistor on a flexible substrate application",

abstract = "In order to improve the SiO2/po/y-Si interface characteristics, we have investigated the interface treatment on a flexible substrate application. The preoxidation by N2O plasma reduces the transition layer, which is deposited during the initial growth stage, between poly-Si and SiO2. The preoxidation by N2O plasma was employed prior to SiO2 deposition. We have investigated the new device for electrical characteristics on the SiO2/po/y-Si. The C-V characteristics of SiO2 by N2O plasma irradiation were considerably improved due to the decrease of interface defect densities. The B-V characteristics are also improved from 0.7 MVIcm2 to 2.4 MVIcm2 by the preoxidation.",

author = "Park Joong-Hyun and Han Sang-Myeon and Park Sang-Geun and Choi Sung-Hwan and Lee Woo-Chul and Jung Ji-Sim and Kwon Jang-Yeon and Han Min-Koo",

year = "2006",

language = "English",

pages = "743--746",

note = "13th International Display Workshops, IDW '06 ; Conference date: 06-12-2006 Through 06-12-2006",

}

Joong-Hyun, P, Sang-Myeon, H, Sang-Geun, P, Sung-Hwan, C, Woo-Chul, L, Ji-Sim, J, Jang-Yeon, K & Min-Koo, H 2006, 'The effects of preoxidation by N₂O plasma on the silicon dioxide as a gate insulator of poly-Si thin film transistor on a flexible substrate application', Paper presented at 13th International Display Workshops, IDW '06, Otsu, Japan, 06/12/6 - 06/12/6 pp. 743-746.

The effects of preoxidation by N₂O plasma on the silicon dioxide as a gate insulator of poly-Si thin film transistor on a flexible substrate application. / Joong-Hyun, Park; Sang-Myeon, Han; Sang-Geun, Park; Sung-Hwan, Choi; Woo-Chul, Lee; Ji-Sim, Jung; Jang-Yeon, Kwon; Min-Koo, Han.

2006. 743-746 Paper presented at 13th International Display Workshops, IDW '06, Otsu, Japan.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - The effects of preoxidation by N2O plasma on the silicon dioxide as a gate insulator of poly-Si thin film transistor on a flexible substrate application

AU - Joong-Hyun, Park

AU - Sang-Myeon, Han

AU - Sang-Geun, Park

AU - Sung-Hwan, Choi

AU - Woo-Chul, Lee

AU - Ji-Sim, Jung

AU - Jang-Yeon, Kwon

AU - Min-Koo, Han

PY - 2006

Y1 - 2006

N2 - In order to improve the SiO2/po/y-Si interface characteristics, we have investigated the interface treatment on a flexible substrate application. The preoxidation by N2O plasma reduces the transition layer, which is deposited during the initial growth stage, between poly-Si and SiO2. The preoxidation by N2O plasma was employed prior to SiO2 deposition. We have investigated the new device for electrical characteristics on the SiO2/po/y-Si. The C-V characteristics of SiO2 by N2O plasma irradiation were considerably improved due to the decrease of interface defect densities. The B-V characteristics are also improved from 0.7 MVIcm2 to 2.4 MVIcm2 by the preoxidation.

AB - In order to improve the SiO2/po/y-Si interface characteristics, we have investigated the interface treatment on a flexible substrate application. The preoxidation by N2O plasma reduces the transition layer, which is deposited during the initial growth stage, between poly-Si and SiO2. The preoxidation by N2O plasma was employed prior to SiO2 deposition. We have investigated the new device for electrical characteristics on the SiO2/po/y-Si. The C-V characteristics of SiO2 by N2O plasma irradiation were considerably improved due to the decrease of interface defect densities. The B-V characteristics are also improved from 0.7 MVIcm2 to 2.4 MVIcm2 by the preoxidation.

UR - http://www.scopus.com/inward/record.url?scp=57649183728&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=57649183728&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:57649183728

SP - 743

EP - 746

T2 - 13th International Display Workshops, IDW '06

Y2 - 6 December 2006 through 6 December 2006

ER -

The effects of preoxidation by N₂O plasma on the silicon dioxide as a gate insulator of poly-Si thin film transistor on a flexible substrate application

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