The effects of preoxidation by N2O plasma on the silicon dioxide as a gate insulator of poly-Si thin film transistor on a flexible substrate application

Park Joong-Hyun, Han Sang-Myeon, Park Sang-Geun, Choi Sung-Hwan, Lee Woo-Chul, Jung Ji-Sim, Kwon Jang-Yeon, Han Min-Koo

Research output: Contribution to conferencePaper

Abstract

In order to improve the SiO2/po/y-Si interface characteristics, we have investigated the interface treatment on a flexible substrate application. The preoxidation by N2O plasma reduces the transition layer, which is deposited during the initial growth stage, between poly-Si and SiO2. The preoxidation by N2O plasma was employed prior to SiO2 deposition. We have investigated the new device for electrical characteristics on the SiO2/po/y-Si. The C-V characteristics of SiO2 by N2O plasma irradiation were considerably improved due to the decrease of interface defect densities. The B-V characteristics are also improved from 0.7 MVIcm2 to 2.4 MVIcm2 by the preoxidation.

Original languageEnglish
Pages743-746
Number of pages4
Publication statusPublished - 2006
Event13th International Display Workshops, IDW '06 - Otsu, Japan
Duration: 2006 Dec 62006 Dec 6

Other

Other13th International Display Workshops, IDW '06
CountryJapan
CityOtsu
Period06/12/606/12/6

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging
  • Atomic and Molecular Physics, and Optics

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    Joong-Hyun, P., Sang-Myeon, H., Sang-Geun, P., Sung-Hwan, C., Woo-Chul, L., Ji-Sim, J., Jang-Yeon, K., & Min-Koo, H. (2006). The effects of preoxidation by N2O plasma on the silicon dioxide as a gate insulator of poly-Si thin film transistor on a flexible substrate application. 743-746. Paper presented at 13th International Display Workshops, IDW '06, Otsu, Japan.