Abstract
In order to improve the SiO2/po/y-Si interface characteristics, we have investigated the interface treatment on a flexible substrate application. The preoxidation by N2O plasma reduces the transition layer, which is deposited during the initial growth stage, between poly-Si and SiO2. The preoxidation by N2O plasma was employed prior to SiO2 deposition. We have investigated the new device for electrical characteristics on the SiO2/po/y-Si. The C-V characteristics of SiO2 by N2O plasma irradiation were considerably improved due to the decrease of interface defect densities. The B-V characteristics are also improved from 0.7 MVIcm2 to 2.4 MVIcm2 by the preoxidation.
| Original language | English |
|---|---|
| Pages | 743-746 |
| Number of pages | 4 |
| Publication status | Published - 2006 Dec 1 |
| Event | 13th International Display Workshops, IDW '06 - Otsu, Japan Duration: 2006 Dec 6 → 2006 Dec 6 |
Other
| Other | 13th International Display Workshops, IDW '06 |
|---|---|
| Country | Japan |
| City | Otsu |
| Period | 06/12/6 → 06/12/6 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Radiology Nuclear Medicine and imaging
- Atomic and Molecular Physics, and Optics
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Joong-Hyun, P., Sang-Myeon, H., Sang-Geun, P., Sung-Hwan, C., Woo-Chul, L., Ji-Sim, J., Jang-Yeon, K., & Min-Koo, H. (2006). The effects of preoxidation by N2O plasma on the silicon dioxide as a gate insulator of poly-Si thin film transistor on a flexible substrate application. 743-746. Paper presented at 13th International Display Workshops, IDW '06, Otsu, Japan.