The effects of preoxidation by N2O plasma on the silicon dioxide as a gate insulator of poly-Si thin film transistor on a flexible substrate application

Park Joong-Hyun, Han Sang-Myeon, Park Sang-Geun, Choi Sung-Hwan, Lee Woo-Chul, Jung Ji-Sim, Kwon Jang-Yeon, Han Min-Koo

Research output: Contribution to conferencePaper

Abstract

In order to improve the SiO2/po/y-Si interface characteristics, we have investigated the interface treatment on a flexible substrate application. The preoxidation by N2O plasma reduces the transition layer, which is deposited during the initial growth stage, between poly-Si and SiO2. The preoxidation by N2O plasma was employed prior to SiO2 deposition. We have investigated the new device for electrical characteristics on the SiO2/po/y-Si. The C-V characteristics of SiO2 by N2O plasma irradiation were considerably improved due to the decrease of interface defect densities. The B-V characteristics are also improved from 0.7 MVIcm2 to 2.4 MVIcm2 by the preoxidation.

Original languageEnglish
Pages743-746
Number of pages4
Publication statusPublished - 2006 Dec 1
Event13th International Display Workshops, IDW '06 - Otsu, Japan
Duration: 2006 Dec 62006 Dec 6

Other

Other13th International Display Workshops, IDW '06
CountryJapan
CityOtsu
Period06/12/606/12/6

Fingerprint

Thin film transistors
Polysilicon
Silicon Dioxide
transistors
Silica
insulators
silicon dioxide
Plasmas
Substrates
thin films
Defect density
transition layers
Irradiation
Equipment and Supplies
Growth
irradiation
defects

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging
  • Atomic and Molecular Physics, and Optics

Cite this

Joong-Hyun, P., Sang-Myeon, H., Sang-Geun, P., Sung-Hwan, C., Woo-Chul, L., Ji-Sim, J., ... Min-Koo, H. (2006). The effects of preoxidation by N2O plasma on the silicon dioxide as a gate insulator of poly-Si thin film transistor on a flexible substrate application. 743-746. Paper presented at 13th International Display Workshops, IDW '06, Otsu, Japan.
Joong-Hyun, Park ; Sang-Myeon, Han ; Sang-Geun, Park ; Sung-Hwan, Choi ; Woo-Chul, Lee ; Ji-Sim, Jung ; Jang-Yeon, Kwon ; Min-Koo, Han. / The effects of preoxidation by N2O plasma on the silicon dioxide as a gate insulator of poly-Si thin film transistor on a flexible substrate application. Paper presented at 13th International Display Workshops, IDW '06, Otsu, Japan.4 p.
@conference{a83d95d46713411aae34da194b92a1ff,
title = "The effects of preoxidation by N2O plasma on the silicon dioxide as a gate insulator of poly-Si thin film transistor on a flexible substrate application",
abstract = "In order to improve the SiO2/po/y-Si interface characteristics, we have investigated the interface treatment on a flexible substrate application. The preoxidation by N2O plasma reduces the transition layer, which is deposited during the initial growth stage, between poly-Si and SiO2. The preoxidation by N2O plasma was employed prior to SiO2 deposition. We have investigated the new device for electrical characteristics on the SiO2/po/y-Si. The C-V characteristics of SiO2 by N2O plasma irradiation were considerably improved due to the decrease of interface defect densities. The B-V characteristics are also improved from 0.7 MVIcm2 to 2.4 MVIcm2 by the preoxidation.",
author = "Park Joong-Hyun and Han Sang-Myeon and Park Sang-Geun and Choi Sung-Hwan and Lee Woo-Chul and Jung Ji-Sim and Kwon Jang-Yeon and Han Min-Koo",
year = "2006",
month = "12",
day = "1",
language = "English",
pages = "743--746",
note = "13th International Display Workshops, IDW '06 ; Conference date: 06-12-2006 Through 06-12-2006",

}

Joong-Hyun, P, Sang-Myeon, H, Sang-Geun, P, Sung-Hwan, C, Woo-Chul, L, Ji-Sim, J, Jang-Yeon, K & Min-Koo, H 2006, 'The effects of preoxidation by N2O plasma on the silicon dioxide as a gate insulator of poly-Si thin film transistor on a flexible substrate application' Paper presented at 13th International Display Workshops, IDW '06, Otsu, Japan, 06/12/6 - 06/12/6, pp. 743-746.

The effects of preoxidation by N2O plasma on the silicon dioxide as a gate insulator of poly-Si thin film transistor on a flexible substrate application. / Joong-Hyun, Park; Sang-Myeon, Han; Sang-Geun, Park; Sung-Hwan, Choi; Woo-Chul, Lee; Ji-Sim, Jung; Jang-Yeon, Kwon; Min-Koo, Han.

2006. 743-746 Paper presented at 13th International Display Workshops, IDW '06, Otsu, Japan.

Research output: Contribution to conferencePaper

TY - CONF

T1 - The effects of preoxidation by N2O plasma on the silicon dioxide as a gate insulator of poly-Si thin film transistor on a flexible substrate application

AU - Joong-Hyun, Park

AU - Sang-Myeon, Han

AU - Sang-Geun, Park

AU - Sung-Hwan, Choi

AU - Woo-Chul, Lee

AU - Ji-Sim, Jung

AU - Jang-Yeon, Kwon

AU - Min-Koo, Han

PY - 2006/12/1

Y1 - 2006/12/1

N2 - In order to improve the SiO2/po/y-Si interface characteristics, we have investigated the interface treatment on a flexible substrate application. The preoxidation by N2O plasma reduces the transition layer, which is deposited during the initial growth stage, between poly-Si and SiO2. The preoxidation by N2O plasma was employed prior to SiO2 deposition. We have investigated the new device for electrical characteristics on the SiO2/po/y-Si. The C-V characteristics of SiO2 by N2O plasma irradiation were considerably improved due to the decrease of interface defect densities. The B-V characteristics are also improved from 0.7 MVIcm2 to 2.4 MVIcm2 by the preoxidation.

AB - In order to improve the SiO2/po/y-Si interface characteristics, we have investigated the interface treatment on a flexible substrate application. The preoxidation by N2O plasma reduces the transition layer, which is deposited during the initial growth stage, between poly-Si and SiO2. The preoxidation by N2O plasma was employed prior to SiO2 deposition. We have investigated the new device for electrical characteristics on the SiO2/po/y-Si. The C-V characteristics of SiO2 by N2O plasma irradiation were considerably improved due to the decrease of interface defect densities. The B-V characteristics are also improved from 0.7 MVIcm2 to 2.4 MVIcm2 by the preoxidation.

UR - http://www.scopus.com/inward/record.url?scp=57649183728&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=57649183728&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:57649183728

SP - 743

EP - 746

ER -

Joong-Hyun P, Sang-Myeon H, Sang-Geun P, Sung-Hwan C, Woo-Chul L, Ji-Sim J et al. The effects of preoxidation by N2O plasma on the silicon dioxide as a gate insulator of poly-Si thin film transistor on a flexible substrate application. 2006. Paper presented at 13th International Display Workshops, IDW '06, Otsu, Japan.