Abstract
In order to improve the SiO2/po/y-Si interface characteristics, we have investigated the interface treatment on a flexible substrate application. The preoxidation by N2O plasma reduces the transition layer, which is deposited during the initial growth stage, between poly-Si and SiO2. The preoxidation by N2O plasma was employed prior to SiO2 deposition. We have investigated the new device for electrical characteristics on the SiO2/po/y-Si. The C-V characteristics of SiO2 by N2O plasma irradiation were considerably improved due to the decrease of interface defect densities. The B-V characteristics are also improved from 0.7 MVIcm2 to 2.4 MVIcm2 by the preoxidation.
| Original language | English |
|---|---|
| Pages | 743-746 |
| Number of pages | 4 |
| Publication status | Published - 2006 Dec 1 |
| Event | 13th International Display Workshops, IDW '06 - Otsu, Japan Duration: 2006 Dec 6 → 2006 Dec 6 |
Other
| Other | 13th International Display Workshops, IDW '06 |
|---|---|
| Country | Japan |
| City | Otsu |
| Period | 06/12/6 → 06/12/6 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Radiology Nuclear Medicine and imaging
- Atomic and Molecular Physics, and Optics
Cite this
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The effects of preoxidation by N2O plasma on the silicon dioxide as a gate insulator of poly-Si thin film transistor on a flexible substrate application. / Joong-Hyun, Park; Sang-Myeon, Han; Sang-Geun, Park; Sung-Hwan, Choi; Woo-Chul, Lee; Ji-Sim, Jung; Jang-Yeon, Kwon; Min-Koo, Han.
2006. 743-746 Paper presented at 13th International Display Workshops, IDW '06, Otsu, Japan.Research output: Contribution to conference › Paper
TY - CONF
T1 - The effects of preoxidation by N2O plasma on the silicon dioxide as a gate insulator of poly-Si thin film transistor on a flexible substrate application
AU - Joong-Hyun, Park
AU - Sang-Myeon, Han
AU - Sang-Geun, Park
AU - Sung-Hwan, Choi
AU - Woo-Chul, Lee
AU - Ji-Sim, Jung
AU - Jang-Yeon, Kwon
AU - Min-Koo, Han
PY - 2006/12/1
Y1 - 2006/12/1
N2 - In order to improve the SiO2/po/y-Si interface characteristics, we have investigated the interface treatment on a flexible substrate application. The preoxidation by N2O plasma reduces the transition layer, which is deposited during the initial growth stage, between poly-Si and SiO2. The preoxidation by N2O plasma was employed prior to SiO2 deposition. We have investigated the new device for electrical characteristics on the SiO2/po/y-Si. The C-V characteristics of SiO2 by N2O plasma irradiation were considerably improved due to the decrease of interface defect densities. The B-V characteristics are also improved from 0.7 MVIcm2 to 2.4 MVIcm2 by the preoxidation.
AB - In order to improve the SiO2/po/y-Si interface characteristics, we have investigated the interface treatment on a flexible substrate application. The preoxidation by N2O plasma reduces the transition layer, which is deposited during the initial growth stage, between poly-Si and SiO2. The preoxidation by N2O plasma was employed prior to SiO2 deposition. We have investigated the new device for electrical characteristics on the SiO2/po/y-Si. The C-V characteristics of SiO2 by N2O plasma irradiation were considerably improved due to the decrease of interface defect densities. The B-V characteristics are also improved from 0.7 MVIcm2 to 2.4 MVIcm2 by the preoxidation.
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M3 - Paper
AN - SCOPUS:57649183728
SP - 743
EP - 746
ER -