The effects of surface modification on the electrical properties of p-n + junction silicon nanowires grown by an aqueous electroless etching method

Seulah Lee, Ja Hoon Koo, Jungmok Seo, Sung Dae Kim, Kwang Hyun Lee, Seongil Im, Young Woon Kim, Taeyoon Lee

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Although the aqueous electroless etching (AEE) method has received significant attention for the fabrication of silicon nanowires (SiNWs) due to its simplicity and effectiveness, SiNWs grown via theAEE method have a drawback in that their surface roughness is considerably high. Thus, we fabricated surface-modified p-n + junction SiNWs grown byAEE, wherein the surface roughness was reduced by a sequential processes of oxide growth using the rapid thermal oxidation (RTO) cycling process and oxideremoval with a hydrofluoric acid solution. Highresolution transmission electron microscopy analysisconfirmed that the surface roughness of the modified SiNWs was significantly decreased compared with that of the as-fabricated SiNWs. After RTO treatment, the wettability of the SiNWs had dramatically changed from superhydrophilic to superhydrophobic, which can be attributed to the formation of siloxane groups on the native oxide/SiNW surfaces and the effect of the nanoscale structure. Due to the enhancement in surface carrier mobility, the current density of thesurface-modified p-n + junction SiNWs was approximately 6.3-fold greater than that of the as-fabricated sample at a forward bias of 4 V. Meanwhile, the photocurrent density of the surface-modified p-n +junction SiNWs was considerably decreased as a result of the decreases in the light absorption area, light absorption volume, and light scattering.

Original languageEnglish
Article number0840
JournalJournal of Nanoparticle Research
Volume14
Issue number5
DOIs
Publication statusPublished - 2012 Apr 4

Fingerprint

Silicon Nanowires
Surface Modification
Electrical Properties
Silicon
Etching
p-n junctions
Nanowires
Surface treatment
Electric properties
nanowires
electrical properties
etching
silicon
Surface Roughness
surface roughness
Surface roughness
electromagnetic absorption
Oxidation
Light absorption
Oxides

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Atomic and Molecular Physics, and Optics
  • Chemistry(all)
  • Modelling and Simulation
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

@article{b974781ca0b4490693be1ac21485c019,
title = "The effects of surface modification on the electrical properties of p-n + junction silicon nanowires grown by an aqueous electroless etching method",
abstract = "Although the aqueous electroless etching (AEE) method has received significant attention for the fabrication of silicon nanowires (SiNWs) due to its simplicity and effectiveness, SiNWs grown via theAEE method have a drawback in that their surface roughness is considerably high. Thus, we fabricated surface-modified p-n + junction SiNWs grown byAEE, wherein the surface roughness was reduced by a sequential processes of oxide growth using the rapid thermal oxidation (RTO) cycling process and oxideremoval with a hydrofluoric acid solution. Highresolution transmission electron microscopy analysisconfirmed that the surface roughness of the modified SiNWs was significantly decreased compared with that of the as-fabricated SiNWs. After RTO treatment, the wettability of the SiNWs had dramatically changed from superhydrophilic to superhydrophobic, which can be attributed to the formation of siloxane groups on the native oxide/SiNW surfaces and the effect of the nanoscale structure. Due to the enhancement in surface carrier mobility, the current density of thesurface-modified p-n + junction SiNWs was approximately 6.3-fold greater than that of the as-fabricated sample at a forward bias of 4 V. Meanwhile, the photocurrent density of the surface-modified p-n +junction SiNWs was considerably decreased as a result of the decreases in the light absorption area, light absorption volume, and light scattering.",
author = "Seulah Lee and Koo, {Ja Hoon} and Jungmok Seo and Kim, {Sung Dae} and Lee, {Kwang Hyun} and Seongil Im and Kim, {Young Woon} and Taeyoon Lee",
year = "2012",
month = "4",
day = "4",
doi = "10.1007/s11051-012-0840-6",
language = "English",
volume = "14",
journal = "Journal of Nanoparticle Research",
issn = "1388-0764",
publisher = "Springer Netherlands",
number = "5",

}

The effects of surface modification on the electrical properties of p-n + junction silicon nanowires grown by an aqueous electroless etching method. / Lee, Seulah; Koo, Ja Hoon; Seo, Jungmok; Kim, Sung Dae; Lee, Kwang Hyun; Im, Seongil; Kim, Young Woon; Lee, Taeyoon.

In: Journal of Nanoparticle Research, Vol. 14, No. 5, 0840, 04.04.2012.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The effects of surface modification on the electrical properties of p-n + junction silicon nanowires grown by an aqueous electroless etching method

AU - Lee, Seulah

AU - Koo, Ja Hoon

AU - Seo, Jungmok

AU - Kim, Sung Dae

AU - Lee, Kwang Hyun

AU - Im, Seongil

AU - Kim, Young Woon

AU - Lee, Taeyoon

PY - 2012/4/4

Y1 - 2012/4/4

N2 - Although the aqueous electroless etching (AEE) method has received significant attention for the fabrication of silicon nanowires (SiNWs) due to its simplicity and effectiveness, SiNWs grown via theAEE method have a drawback in that their surface roughness is considerably high. Thus, we fabricated surface-modified p-n + junction SiNWs grown byAEE, wherein the surface roughness was reduced by a sequential processes of oxide growth using the rapid thermal oxidation (RTO) cycling process and oxideremoval with a hydrofluoric acid solution. Highresolution transmission electron microscopy analysisconfirmed that the surface roughness of the modified SiNWs was significantly decreased compared with that of the as-fabricated SiNWs. After RTO treatment, the wettability of the SiNWs had dramatically changed from superhydrophilic to superhydrophobic, which can be attributed to the formation of siloxane groups on the native oxide/SiNW surfaces and the effect of the nanoscale structure. Due to the enhancement in surface carrier mobility, the current density of thesurface-modified p-n + junction SiNWs was approximately 6.3-fold greater than that of the as-fabricated sample at a forward bias of 4 V. Meanwhile, the photocurrent density of the surface-modified p-n +junction SiNWs was considerably decreased as a result of the decreases in the light absorption area, light absorption volume, and light scattering.

AB - Although the aqueous electroless etching (AEE) method has received significant attention for the fabrication of silicon nanowires (SiNWs) due to its simplicity and effectiveness, SiNWs grown via theAEE method have a drawback in that their surface roughness is considerably high. Thus, we fabricated surface-modified p-n + junction SiNWs grown byAEE, wherein the surface roughness was reduced by a sequential processes of oxide growth using the rapid thermal oxidation (RTO) cycling process and oxideremoval with a hydrofluoric acid solution. Highresolution transmission electron microscopy analysisconfirmed that the surface roughness of the modified SiNWs was significantly decreased compared with that of the as-fabricated SiNWs. After RTO treatment, the wettability of the SiNWs had dramatically changed from superhydrophilic to superhydrophobic, which can be attributed to the formation of siloxane groups on the native oxide/SiNW surfaces and the effect of the nanoscale structure. Due to the enhancement in surface carrier mobility, the current density of thesurface-modified p-n + junction SiNWs was approximately 6.3-fold greater than that of the as-fabricated sample at a forward bias of 4 V. Meanwhile, the photocurrent density of the surface-modified p-n +junction SiNWs was considerably decreased as a result of the decreases in the light absorption area, light absorption volume, and light scattering.

UR - http://www.scopus.com/inward/record.url?scp=84859203412&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84859203412&partnerID=8YFLogxK

U2 - 10.1007/s11051-012-0840-6

DO - 10.1007/s11051-012-0840-6

M3 - Article

VL - 14

JO - Journal of Nanoparticle Research

JF - Journal of Nanoparticle Research

SN - 1388-0764

IS - 5

M1 - 0840

ER -