The effects of Ta on the formation of Ni-silicide in Ni 0.95xTax0.05/Si systems

Dongwon Lee; Kihoon Do; Dae Hong Ko; Siyoung Choi; Ja Hum Ku; Cheol Woong Yang

doi:10.1016/j.mseb.2004.07.081

The effects of Ta on the formation of Ni-silicide in Ni _0.95xTa_x0.05/Si systems

Dongwon Lee, Kihoon Do, Dae Hong Ko, Siyoung Choi, Ja Hum Ku, Cheol Woong Yang

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

We investigated a comparative study on the suicide formation in the Ni _0.95Ta_0.05/Si alloy systems and Ni/Si systems. Ni and Ni_0.95Ta_0.05 films were deposited on Si(1 0 0) substrate by DC magnetron sputtering and processed at various silicidation temperatures. The sheet resistance of the suicide from the Ni_0.95Ta _0.05/Si alloy systems was obtained at lower values than those in pure Ni/Si systems at any temperature. Using RBS and TEM analyses, we confirmed the presence of a Ta rich layer at the top of the Ni-silicide layer and the presence of small amounts of Ta in the suicide layer. The stability of the silicide layer for the Ni_0.95Ta_0.05 systems is explained by the presence of the Ta rich layer on top of the Ni-silicide layer, as well as by the presence of the small amount of Ta in the Ni-silicide layer. The Ni-silicide using Ni_0.95Ta_0.05/Si system displayed a stable sheet resistance value of ∼5 Ω/sq which was maintained during the anneal process at 600°C.

Original language	English
Pages (from-to)	241-245
Number of pages	5
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	114-115
Issue number	SPEC. ISS.
DOIs	https://doi.org/10.1016/j.mseb.2004.07.081
Publication status	Published - 2004

Bibliographical note

Funding Information:
This research was financially supported by Samsung Electronics Co. Ltd. In addition, the authors would like to acknowledge their appreciation to Kang Han Byul and CCRF in Sungkyunkwan University for his TEM analysis.

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.mseb.2004.07.081

Cite this

@article{065386c274d747f8910df1853c199a40,

title = "The effects of Ta on the formation of Ni-silicide in Ni 0.95xTax0.05/Si systems",

abstract = "We investigated a comparative study on the suicide formation in the Ni 0.95Ta0.05/Si alloy systems and Ni/Si systems. Ni and Ni0.95Ta0.05 films were deposited on Si(1 0 0) substrate by DC magnetron sputtering and processed at various silicidation temperatures. The sheet resistance of the suicide from the Ni0.95Ta 0.05/Si alloy systems was obtained at lower values than those in pure Ni/Si systems at any temperature. Using RBS and TEM analyses, we confirmed the presence of a Ta rich layer at the top of the Ni-silicide layer and the presence of small amounts of Ta in the suicide layer. The stability of the silicide layer for the Ni0.95Ta0.05 systems is explained by the presence of the Ta rich layer on top of the Ni-silicide layer, as well as by the presence of the small amount of Ta in the Ni-silicide layer. The Ni-silicide using Ni0.95Ta0.05/Si system displayed a stable sheet resistance value of ∼5 Ω/sq which was maintained during the anneal process at 600°C.",

author = "Dongwon Lee and Kihoon Do and Ko, {Dae Hong} and Siyoung Choi and Ku, {Ja Hum} and Yang, {Cheol Woong}",

note = "Funding Information: This research was financially supported by Samsung Electronics Co. Ltd. In addition, the authors would like to acknowledge their appreciation to Kang Han Byul and CCRF in Sungkyunkwan University for his TEM analysis.",

year = "2004",

doi = "10.1016/j.mseb.2004.07.081",

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T1 - The effects of Ta on the formation of Ni-silicide in Ni 0.95xTax0.05/Si systems

AU - Lee, Dongwon

AU - Do, Kihoon

AU - Ko, Dae Hong

AU - Choi, Siyoung

AU - Ku, Ja Hum

AU - Yang, Cheol Woong

N1 - Funding Information: This research was financially supported by Samsung Electronics Co. Ltd. In addition, the authors would like to acknowledge their appreciation to Kang Han Byul and CCRF in Sungkyunkwan University for his TEM analysis.

PY - 2004

Y1 - 2004

N2 - We investigated a comparative study on the suicide formation in the Ni 0.95Ta0.05/Si alloy systems and Ni/Si systems. Ni and Ni0.95Ta0.05 films were deposited on Si(1 0 0) substrate by DC magnetron sputtering and processed at various silicidation temperatures. The sheet resistance of the suicide from the Ni0.95Ta 0.05/Si alloy systems was obtained at lower values than those in pure Ni/Si systems at any temperature. Using RBS and TEM analyses, we confirmed the presence of a Ta rich layer at the top of the Ni-silicide layer and the presence of small amounts of Ta in the suicide layer. The stability of the silicide layer for the Ni0.95Ta0.05 systems is explained by the presence of the Ta rich layer on top of the Ni-silicide layer, as well as by the presence of the small amount of Ta in the Ni-silicide layer. The Ni-silicide using Ni0.95Ta0.05/Si system displayed a stable sheet resistance value of ∼5 Ω/sq which was maintained during the anneal process at 600°C.

AB - We investigated a comparative study on the suicide formation in the Ni 0.95Ta0.05/Si alloy systems and Ni/Si systems. Ni and Ni0.95Ta0.05 films were deposited on Si(1 0 0) substrate by DC magnetron sputtering and processed at various silicidation temperatures. The sheet resistance of the suicide from the Ni0.95Ta 0.05/Si alloy systems was obtained at lower values than those in pure Ni/Si systems at any temperature. Using RBS and TEM analyses, we confirmed the presence of a Ta rich layer at the top of the Ni-silicide layer and the presence of small amounts of Ta in the suicide layer. The stability of the silicide layer for the Ni0.95Ta0.05 systems is explained by the presence of the Ta rich layer on top of the Ni-silicide layer, as well as by the presence of the small amount of Ta in the Ni-silicide layer. The Ni-silicide using Ni0.95Ta0.05/Si system displayed a stable sheet resistance value of ∼5 Ω/sq which was maintained during the anneal process at 600°C.

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