The effects of Ta on the formation of Ni-silicide in Ni 0.95xTax0.05/Si systems

Dongwon Lee, Kihoon Do, Dae Hong Ko, Siyoung Choi, Ja Hum Ku, Cheol Woong Yang

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We investigated a comparative study on the suicide formation in the Ni 0.95Ta0.05/Si alloy systems and Ni/Si systems. Ni and Ni0.95Ta0.05 films were deposited on Si(1 0 0) substrate by DC magnetron sputtering and processed at various silicidation temperatures. The sheet resistance of the suicide from the Ni0.95Ta 0.05/Si alloy systems was obtained at lower values than those in pure Ni/Si systems at any temperature. Using RBS and TEM analyses, we confirmed the presence of a Ta rich layer at the top of the Ni-silicide layer and the presence of small amounts of Ta in the suicide layer. The stability of the silicide layer for the Ni0.95Ta0.05 systems is explained by the presence of the Ta rich layer on top of the Ni-silicide layer, as well as by the presence of the small amount of Ta in the Ni-silicide layer. The Ni-silicide using Ni0.95Ta0.05/Si system displayed a stable sheet resistance value of ∼5 Ω/sq which was maintained during the anneal process at 600°C.

Original languageEnglish
Pages (from-to)241-245
Number of pages5
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume114-115
Issue numberSPEC. ISS.
DOIs
Publication statusPublished - 2004 Dec 30

Fingerprint

Sheet resistance
Magnetron sputtering
Transmission electron microscopy
Temperature
Substrates
magnetron sputtering
direct current
transmission electron microscopy
temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Lee, Dongwon ; Do, Kihoon ; Ko, Dae Hong ; Choi, Siyoung ; Ku, Ja Hum ; Yang, Cheol Woong. / The effects of Ta on the formation of Ni-silicide in Ni 0.95xTax0.05/Si systems. In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 2004 ; Vol. 114-115, No. SPEC. ISS. pp. 241-245.
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The effects of Ta on the formation of Ni-silicide in Ni 0.95xTax0.05/Si systems. / Lee, Dongwon; Do, Kihoon; Ko, Dae Hong; Choi, Siyoung; Ku, Ja Hum; Yang, Cheol Woong.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 114-115, No. SPEC. ISS., 30.12.2004, p. 241-245.

Research output: Contribution to journalArticle

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T1 - The effects of Ta on the formation of Ni-silicide in Ni 0.95xTax0.05/Si systems

AU - Lee, Dongwon

AU - Do, Kihoon

AU - Ko, Dae Hong

AU - Choi, Siyoung

AU - Ku, Ja Hum

AU - Yang, Cheol Woong

PY - 2004/12/30

Y1 - 2004/12/30

N2 - We investigated a comparative study on the suicide formation in the Ni 0.95Ta0.05/Si alloy systems and Ni/Si systems. Ni and Ni0.95Ta0.05 films were deposited on Si(1 0 0) substrate by DC magnetron sputtering and processed at various silicidation temperatures. The sheet resistance of the suicide from the Ni0.95Ta 0.05/Si alloy systems was obtained at lower values than those in pure Ni/Si systems at any temperature. Using RBS and TEM analyses, we confirmed the presence of a Ta rich layer at the top of the Ni-silicide layer and the presence of small amounts of Ta in the suicide layer. The stability of the silicide layer for the Ni0.95Ta0.05 systems is explained by the presence of the Ta rich layer on top of the Ni-silicide layer, as well as by the presence of the small amount of Ta in the Ni-silicide layer. The Ni-silicide using Ni0.95Ta0.05/Si system displayed a stable sheet resistance value of ∼5 Ω/sq which was maintained during the anneal process at 600°C.

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