We investigated a comparative study on the suicide formation in the Ni 0.95Ta0.05/Si alloy systems and Ni/Si systems. Ni and Ni0.95Ta0.05 films were deposited on Si(1 0 0) substrate by DC magnetron sputtering and processed at various silicidation temperatures. The sheet resistance of the suicide from the Ni0.95Ta 0.05/Si alloy systems was obtained at lower values than those in pure Ni/Si systems at any temperature. Using RBS and TEM analyses, we confirmed the presence of a Ta rich layer at the top of the Ni-silicide layer and the presence of small amounts of Ta in the suicide layer. The stability of the silicide layer for the Ni0.95Ta0.05 systems is explained by the presence of the Ta rich layer on top of the Ni-silicide layer, as well as by the presence of the small amount of Ta in the Ni-silicide layer. The Ni-silicide using Ni0.95Ta0.05/Si system displayed a stable sheet resistance value of ∼5 Ω/sq which was maintained during the anneal process at 600°C.
|Number of pages||5|
|Journal||Materials Science and Engineering B: Solid-State Materials for Advanced Technology|
|Issue number||SPEC. ISS.|
|Publication status||Published - 2004|
Bibliographical noteFunding Information:
This research was financially supported by Samsung Electronics Co. Ltd. In addition, the authors would like to acknowledge their appreciation to Kang Han Byul and CCRF in Sungkyunkwan University for his TEM analysis.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering