Abstract
We investigated the effects of UV treatment on the device properties of a plasma-enhanced atomic layer deposition (PE-ALD) ZnO thin film transistor (TFT). Remote PE-ALD ZnO thin films were used as active layers for bottom-gate TFT devices. The as-deposited PE-ALD ZnO film at a growth temperature of 200° C has an overly small carrier concentration, which produces a TFT device with no modulation by gate voltage sweep. However, after UV light exposure, the device shows proper TFT modulation by gate voltage. The threshold voltage (Vth) of the device can be controlled to the negative direction by increasing the UV exposure time. Vth moves from 17.8 to -6.5 V with an increase in UV exposure time from 3 to 120 min.
| Original language | English |
|---|---|
| Pages (from-to) | H151-H154 |
| Journal | Electrochemical and Solid-State Letters |
| Volume | 13 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2010 Mar 26 |
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All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrochemistry
- Electrical and Electronic Engineering
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The effects of UV exposure on plasma-enhanced atomic layer deposition ZnO thin film transistor. / Lim, S. J.; Kim, Jae Min; Kim, Doyoung; Lee, Changsoo; Park, Jin Seong; Kim, Hyungjun.
In: Electrochemical and Solid-State Letters, Vol. 13, No. 5, 26.03.2010, p. H151-H154.Research output: Contribution to journal › Article
TY - JOUR
T1 - The effects of UV exposure on plasma-enhanced atomic layer deposition ZnO thin film transistor
AU - Lim, S. J.
AU - Kim, Jae Min
AU - Kim, Doyoung
AU - Lee, Changsoo
AU - Park, Jin Seong
AU - Kim, Hyungjun
PY - 2010/3/26
Y1 - 2010/3/26
N2 - We investigated the effects of UV treatment on the device properties of a plasma-enhanced atomic layer deposition (PE-ALD) ZnO thin film transistor (TFT). Remote PE-ALD ZnO thin films were used as active layers for bottom-gate TFT devices. The as-deposited PE-ALD ZnO film at a growth temperature of 200° C has an overly small carrier concentration, which produces a TFT device with no modulation by gate voltage sweep. However, after UV light exposure, the device shows proper TFT modulation by gate voltage. The threshold voltage (Vth) of the device can be controlled to the negative direction by increasing the UV exposure time. Vth moves from 17.8 to -6.5 V with an increase in UV exposure time from 3 to 120 min.
AB - We investigated the effects of UV treatment on the device properties of a plasma-enhanced atomic layer deposition (PE-ALD) ZnO thin film transistor (TFT). Remote PE-ALD ZnO thin films were used as active layers for bottom-gate TFT devices. The as-deposited PE-ALD ZnO film at a growth temperature of 200° C has an overly small carrier concentration, which produces a TFT device with no modulation by gate voltage sweep. However, after UV light exposure, the device shows proper TFT modulation by gate voltage. The threshold voltage (Vth) of the device can be controlled to the negative direction by increasing the UV exposure time. Vth moves from 17.8 to -6.5 V with an increase in UV exposure time from 3 to 120 min.
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U2 - 10.1149/1.3322733
DO - 10.1149/1.3322733
M3 - Article
AN - SCOPUS:77949770418
VL - 13
SP - H151-H154
JO - Electrochemical and Solid-State Letters
JF - Electrochemical and Solid-State Letters
SN - 1099-0062
IS - 5
ER -