The effects of UV exposure on plasma-enhanced atomic layer deposition ZnO thin film transistor

S. J. Lim; Jae Min Kim; Doyoung Kim; Changsoo Lee; Jin Seong Park; Hyungjun Kim

doi:10.1149/1.3322733

The effects of UV exposure on plasma-enhanced atomic layer deposition ZnO thin film transistor

S. J. Lim, Jae Min Kim, Doyoung Kim, Changsoo Lee, Jin Seong Park, Hyungjun Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

We investigated the effects of UV treatment on the device properties of a plasma-enhanced atomic layer deposition (PE-ALD) ZnO thin film transistor (TFT). Remote PE-ALD ZnO thin films were used as active layers for bottom-gate TFT devices. The as-deposited PE-ALD ZnO film at a growth temperature of 200° C has an overly small carrier concentration, which produces a TFT device with no modulation by gate voltage sweep. However, after UV light exposure, the device shows proper TFT modulation by gate voltage. The threshold voltage (Vth) of the device can be controlled to the negative direction by increasing the UV exposure time. Vth moves from 17.8 to -6.5 V with an increase in UV exposure time from 3 to 120 min.

Original language	English
Pages (from-to)	H151-H154
Journal	Electrochemical and Solid-State Letters
Volume	13
Issue number	5
DOIs	https://doi.org/10.1149/1.3322733
Publication status	Published - 2010

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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@article{7e66eec68698436f81c31005998f20f7,

title = "The effects of UV exposure on plasma-enhanced atomic layer deposition ZnO thin film transistor",

abstract = "We investigated the effects of UV treatment on the device properties of a plasma-enhanced atomic layer deposition (PE-ALD) ZnO thin film transistor (TFT). Remote PE-ALD ZnO thin films were used as active layers for bottom-gate TFT devices. The as-deposited PE-ALD ZnO film at a growth temperature of 200° C has an overly small carrier concentration, which produces a TFT device with no modulation by gate voltage sweep. However, after UV light exposure, the device shows proper TFT modulation by gate voltage. The threshold voltage (Vth) of the device can be controlled to the negative direction by increasing the UV exposure time. Vth moves from 17.8 to -6.5 V with an increase in UV exposure time from 3 to 120 min.",

author = "Lim, {S. J.} and Kim, {Jae Min} and Doyoung Kim and Changsoo Lee and Park, {Jin Seong} and Hyungjun Kim",

year = "2010",

doi = "10.1149/1.3322733",

language = "English",

volume = "13",

pages = "H151--H154",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society, Inc.",

number = "5",

}

TY - JOUR

T1 - The effects of UV exposure on plasma-enhanced atomic layer deposition ZnO thin film transistor

AU - Lim, S. J.

AU - Kim, Jae Min

AU - Kim, Doyoung

AU - Lee, Changsoo

AU - Park, Jin Seong

AU - Kim, Hyungjun

PY - 2010

Y1 - 2010

N2 - We investigated the effects of UV treatment on the device properties of a plasma-enhanced atomic layer deposition (PE-ALD) ZnO thin film transistor (TFT). Remote PE-ALD ZnO thin films were used as active layers for bottom-gate TFT devices. The as-deposited PE-ALD ZnO film at a growth temperature of 200° C has an overly small carrier concentration, which produces a TFT device with no modulation by gate voltage sweep. However, after UV light exposure, the device shows proper TFT modulation by gate voltage. The threshold voltage (Vth) of the device can be controlled to the negative direction by increasing the UV exposure time. Vth moves from 17.8 to -6.5 V with an increase in UV exposure time from 3 to 120 min.

AB - We investigated the effects of UV treatment on the device properties of a plasma-enhanced atomic layer deposition (PE-ALD) ZnO thin film transistor (TFT). Remote PE-ALD ZnO thin films were used as active layers for bottom-gate TFT devices. The as-deposited PE-ALD ZnO film at a growth temperature of 200° C has an overly small carrier concentration, which produces a TFT device with no modulation by gate voltage sweep. However, after UV light exposure, the device shows proper TFT modulation by gate voltage. The threshold voltage (Vth) of the device can be controlled to the negative direction by increasing the UV exposure time. Vth moves from 17.8 to -6.5 V with an increase in UV exposure time from 3 to 120 min.

UR - http://www.scopus.com/inward/record.url?scp=77949770418&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77949770418&partnerID=8YFLogxK

U2 - 10.1149/1.3322733

DO - 10.1149/1.3322733

M3 - Article

AN - SCOPUS:77949770418

VL - 13

SP - H151-H154

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 5

ER -