The effects of UV exposure on plasma-enhanced atomic layer deposition ZnO thin film transistor

S. J. Lim; Jae Min Kim; Doyoung Kim; Changsoo Lee; Jin Seong Park; Hyungjun Kim

doi:10.1149/1.3322733

The effects of UV exposure on plasma-enhanced atomic layer deposition ZnO thin film transistor

S. J. Lim, Jae Min Kim, Doyoung Kim, Changsoo Lee, Jin Seong Park, Hyungjun Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

We investigated the effects of UV treatment on the device properties of a plasma-enhanced atomic layer deposition (PE-ALD) ZnO thin film transistor (TFT). Remote PE-ALD ZnO thin films were used as active layers for bottom-gate TFT devices. The as-deposited PE-ALD ZnO film at a growth temperature of 200° C has an overly small carrier concentration, which produces a TFT device with no modulation by gate voltage sweep. However, after UV light exposure, the device shows proper TFT modulation by gate voltage. The threshold voltage (Vth) of the device can be controlled to the negative direction by increasing the UV exposure time. Vth moves from 17.8 to -6.5 V with an increase in UV exposure time from 3 to 120 min.

Original language	English
Pages (from-to)	H151-H154
Journal	Electrochemical and Solid-State Letters
Volume	13
Issue number	5
DOIs	https://doi.org/10.1149/1.3322733
Publication status	Published - 2010

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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abstract = "We investigated the effects of UV treatment on the device properties of a plasma-enhanced atomic layer deposition (PE-ALD) ZnO thin film transistor (TFT). Remote PE-ALD ZnO thin films were used as active layers for bottom-gate TFT devices. The as-deposited PE-ALD ZnO film at a growth temperature of 200° C has an overly small carrier concentration, which produces a TFT device with no modulation by gate voltage sweep. However, after UV light exposure, the device shows proper TFT modulation by gate voltage. The threshold voltage (Vth) of the device can be controlled to the negative direction by increasing the UV exposure time. Vth moves from 17.8 to -6.5 V with an increase in UV exposure time from 3 to 120 min.",

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T1 - The effects of UV exposure on plasma-enhanced atomic layer deposition ZnO thin film transistor

AU - Lim, S. J.

AU - Kim, Jae Min

AU - Kim, Doyoung

AU - Lee, Changsoo

AU - Park, Jin Seong

AU - Kim, Hyungjun

PY - 2010

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AB - We investigated the effects of UV treatment on the device properties of a plasma-enhanced atomic layer deposition (PE-ALD) ZnO thin film transistor (TFT). Remote PE-ALD ZnO thin films were used as active layers for bottom-gate TFT devices. The as-deposited PE-ALD ZnO film at a growth temperature of 200° C has an overly small carrier concentration, which produces a TFT device with no modulation by gate voltage sweep. However, after UV light exposure, the device shows proper TFT modulation by gate voltage. The threshold voltage (Vth) of the device can be controlled to the negative direction by increasing the UV exposure time. Vth moves from 17.8 to -6.5 V with an increase in UV exposure time from 3 to 120 min.

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The effects of UV exposure on plasma-enhanced atomic layer deposition ZnO thin film transistor

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