The effects of UV exposure on plasma-enhanced atomic layer deposition ZnO thin film transistor

S. J. Lim, Jae Min Kim, Doyoung Kim, Changsoo Lee, Jin Seong Park, Hyungjun Kim

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We investigated the effects of UV treatment on the device properties of a plasma-enhanced atomic layer deposition (PE-ALD) ZnO thin film transistor (TFT). Remote PE-ALD ZnO thin films were used as active layers for bottom-gate TFT devices. The as-deposited PE-ALD ZnO film at a growth temperature of 200° C has an overly small carrier concentration, which produces a TFT device with no modulation by gate voltage sweep. However, after UV light exposure, the device shows proper TFT modulation by gate voltage. The threshold voltage (Vth) of the device can be controlled to the negative direction by increasing the UV exposure time. Vth moves from 17.8 to -6.5 V with an increase in UV exposure time from 3 to 120 min.

Original languageEnglish
Pages (from-to)H151-H154
JournalElectrochemical and Solid-State Letters
Volume13
Issue number5
DOIs
Publication statusPublished - 2010 Mar 26

Fingerprint

Atomic layer deposition
Thin film transistors
atomic layer epitaxy
transistors
Plasmas
thin films
Modulation
Electric potential
Growth temperature
modulation
Threshold voltage
Ultraviolet radiation
Carrier concentration
electric potential
threshold voltage
Thin films
temperature

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Lim, S. J. ; Kim, Jae Min ; Kim, Doyoung ; Lee, Changsoo ; Park, Jin Seong ; Kim, Hyungjun. / The effects of UV exposure on plasma-enhanced atomic layer deposition ZnO thin film transistor. In: Electrochemical and Solid-State Letters. 2010 ; Vol. 13, No. 5. pp. H151-H154.
@article{7e66eec68698436f81c31005998f20f7,
title = "The effects of UV exposure on plasma-enhanced atomic layer deposition ZnO thin film transistor",
abstract = "We investigated the effects of UV treatment on the device properties of a plasma-enhanced atomic layer deposition (PE-ALD) ZnO thin film transistor (TFT). Remote PE-ALD ZnO thin films were used as active layers for bottom-gate TFT devices. The as-deposited PE-ALD ZnO film at a growth temperature of 200° C has an overly small carrier concentration, which produces a TFT device with no modulation by gate voltage sweep. However, after UV light exposure, the device shows proper TFT modulation by gate voltage. The threshold voltage (Vth) of the device can be controlled to the negative direction by increasing the UV exposure time. Vth moves from 17.8 to -6.5 V with an increase in UV exposure time from 3 to 120 min.",
author = "Lim, {S. J.} and Kim, {Jae Min} and Doyoung Kim and Changsoo Lee and Park, {Jin Seong} and Hyungjun Kim",
year = "2010",
month = "3",
day = "26",
doi = "10.1149/1.3322733",
language = "English",
volume = "13",
pages = "H151--H154",
journal = "Electrochemical and Solid-State Letters",
issn = "1099-0062",
publisher = "Electrochemical Society, Inc.",
number = "5",

}

The effects of UV exposure on plasma-enhanced atomic layer deposition ZnO thin film transistor. / Lim, S. J.; Kim, Jae Min; Kim, Doyoung; Lee, Changsoo; Park, Jin Seong; Kim, Hyungjun.

In: Electrochemical and Solid-State Letters, Vol. 13, No. 5, 26.03.2010, p. H151-H154.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The effects of UV exposure on plasma-enhanced atomic layer deposition ZnO thin film transistor

AU - Lim, S. J.

AU - Kim, Jae Min

AU - Kim, Doyoung

AU - Lee, Changsoo

AU - Park, Jin Seong

AU - Kim, Hyungjun

PY - 2010/3/26

Y1 - 2010/3/26

N2 - We investigated the effects of UV treatment on the device properties of a plasma-enhanced atomic layer deposition (PE-ALD) ZnO thin film transistor (TFT). Remote PE-ALD ZnO thin films were used as active layers for bottom-gate TFT devices. The as-deposited PE-ALD ZnO film at a growth temperature of 200° C has an overly small carrier concentration, which produces a TFT device with no modulation by gate voltage sweep. However, after UV light exposure, the device shows proper TFT modulation by gate voltage. The threshold voltage (Vth) of the device can be controlled to the negative direction by increasing the UV exposure time. Vth moves from 17.8 to -6.5 V with an increase in UV exposure time from 3 to 120 min.

AB - We investigated the effects of UV treatment on the device properties of a plasma-enhanced atomic layer deposition (PE-ALD) ZnO thin film transistor (TFT). Remote PE-ALD ZnO thin films were used as active layers for bottom-gate TFT devices. The as-deposited PE-ALD ZnO film at a growth temperature of 200° C has an overly small carrier concentration, which produces a TFT device with no modulation by gate voltage sweep. However, after UV light exposure, the device shows proper TFT modulation by gate voltage. The threshold voltage (Vth) of the device can be controlled to the negative direction by increasing the UV exposure time. Vth moves from 17.8 to -6.5 V with an increase in UV exposure time from 3 to 120 min.

UR - http://www.scopus.com/inward/record.url?scp=77949770418&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77949770418&partnerID=8YFLogxK

U2 - 10.1149/1.3322733

DO - 10.1149/1.3322733

M3 - Article

AN - SCOPUS:77949770418

VL - 13

SP - H151-H154

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 5

ER -