The effects of UV treatment on thermal and plasma-enhanced atomic layer deposition of ZnO thin film transistor

Jae Min Kim, S. J. Lim, Doyoung Kim, Hyungjun Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigated the ultraviolet (UV) light photostability of plasma-enhanced and thermal atomic layer deposition of ZnO thin film transistor (TFT). The negative shift of threshold voltage was similarly observed in both cases by UV exposure due to the increment of carrier concentration. Additionally, the transfer curves of TFT using thermal ALD ZnO:N active layer were exhibited recovery characteristics.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
Pages895-896
Number of pages2
DOIs
Publication statusPublished - 2011 Dec 1
Event30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of
Duration: 2010 Jul 252010 Jul 30

Publication series

NameAIP Conference Proceedings
Volume1399
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other30th International Conference on the Physics of Semiconductors, ICPS-30
CountryKorea, Republic of
CitySeoul
Period10/7/2510/7/30

Fingerprint

atomic layer epitaxy
transistors
thin films
ultraviolet radiation
threshold voltage
recovery
shift
curves

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Kim, J. M., Lim, S. J., Kim, D., & Kim, H. (2011). The effects of UV treatment on thermal and plasma-enhanced atomic layer deposition of ZnO thin film transistor. In Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30 (pp. 895-896). (AIP Conference Proceedings; Vol. 1399). https://doi.org/10.1063/1.3666664
Kim, Jae Min ; Lim, S. J. ; Kim, Doyoung ; Kim, Hyungjun. / The effects of UV treatment on thermal and plasma-enhanced atomic layer deposition of ZnO thin film transistor. Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30. 2011. pp. 895-896 (AIP Conference Proceedings).
@inproceedings{434e9e28f5a64edfbf56927c4c112328,
title = "The effects of UV treatment on thermal and plasma-enhanced atomic layer deposition of ZnO thin film transistor",
abstract = "We investigated the ultraviolet (UV) light photostability of plasma-enhanced and thermal atomic layer deposition of ZnO thin film transistor (TFT). The negative shift of threshold voltage was similarly observed in both cases by UV exposure due to the increment of carrier concentration. Additionally, the transfer curves of TFT using thermal ALD ZnO:N active layer were exhibited recovery characteristics.",
author = "Kim, {Jae Min} and Lim, {S. J.} and Doyoung Kim and Hyungjun Kim",
year = "2011",
month = "12",
day = "1",
doi = "10.1063/1.3666664",
language = "English",
isbn = "9780735410022",
series = "AIP Conference Proceedings",
pages = "895--896",
booktitle = "Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30",

}

Kim, JM, Lim, SJ, Kim, D & Kim, H 2011, The effects of UV treatment on thermal and plasma-enhanced atomic layer deposition of ZnO thin film transistor. in Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30. AIP Conference Proceedings, vol. 1399, pp. 895-896, 30th International Conference on the Physics of Semiconductors, ICPS-30, Seoul, Korea, Republic of, 10/7/25. https://doi.org/10.1063/1.3666664

The effects of UV treatment on thermal and plasma-enhanced atomic layer deposition of ZnO thin film transistor. / Kim, Jae Min; Lim, S. J.; Kim, Doyoung; Kim, Hyungjun.

Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30. 2011. p. 895-896 (AIP Conference Proceedings; Vol. 1399).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - The effects of UV treatment on thermal and plasma-enhanced atomic layer deposition of ZnO thin film transistor

AU - Kim, Jae Min

AU - Lim, S. J.

AU - Kim, Doyoung

AU - Kim, Hyungjun

PY - 2011/12/1

Y1 - 2011/12/1

N2 - We investigated the ultraviolet (UV) light photostability of plasma-enhanced and thermal atomic layer deposition of ZnO thin film transistor (TFT). The negative shift of threshold voltage was similarly observed in both cases by UV exposure due to the increment of carrier concentration. Additionally, the transfer curves of TFT using thermal ALD ZnO:N active layer were exhibited recovery characteristics.

AB - We investigated the ultraviolet (UV) light photostability of plasma-enhanced and thermal atomic layer deposition of ZnO thin film transistor (TFT). The negative shift of threshold voltage was similarly observed in both cases by UV exposure due to the increment of carrier concentration. Additionally, the transfer curves of TFT using thermal ALD ZnO:N active layer were exhibited recovery characteristics.

UR - http://www.scopus.com/inward/record.url?scp=84862801627&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84862801627&partnerID=8YFLogxK

U2 - 10.1063/1.3666664

DO - 10.1063/1.3666664

M3 - Conference contribution

AN - SCOPUS:84862801627

SN - 9780735410022

T3 - AIP Conference Proceedings

SP - 895

EP - 896

BT - Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30

ER -

Kim JM, Lim SJ, Kim D, Kim H. The effects of UV treatment on thermal and plasma-enhanced atomic layer deposition of ZnO thin film transistor. In Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30. 2011. p. 895-896. (AIP Conference Proceedings). https://doi.org/10.1063/1.3666664