The effects of UV treatment on thermal and plasma-enhanced atomic layer deposition of ZnO thin film transistor

Jae Min Kim; S. J. Lim; Doyoung Kim; Hyungjun Kim

doi:10.1063/1.3666664

The effects of UV treatment on thermal and plasma-enhanced atomic layer deposition of ZnO thin film transistor

Jae Min Kim, S. J. Lim, Doyoung Kim, Hyungjun Kim

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We investigated the ultraviolet (UV) light photostability of plasma-enhanced and thermal atomic layer deposition of ZnO thin film transistor (TFT). The negative shift of threshold voltage was similarly observed in both cases by UV exposure due to the increment of carrier concentration. Additionally, the transfer curves of TFT using thermal ALD ZnO:N active layer were exhibited recovery characteristics.

Original language	English
Title of host publication	Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
Pages	895-896
Number of pages	2
DOIs	https://doi.org/10.1063/1.3666664
Publication status	Published - 2011 Dec 1
Event	30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of Duration: 2010 Jul 25 → 2010 Jul 30

Publication series

Name	AIP Conference Proceedings
Volume	1399
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Other

Other	30th International Conference on the Physics of Semiconductors, ICPS-30
Country	Korea, Republic of
City	Seoul
Period	10/7/25 → 10/7/30

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All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

Cite this

Kim, J. M., Lim, S. J., Kim, D., & Kim, H. (2011). The effects of UV treatment on thermal and plasma-enhanced atomic layer deposition of ZnO thin film transistor. In Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30 (pp. 895-896). (AIP Conference Proceedings; Vol. 1399). https://doi.org/10.1063/1.3666664

@inproceedings{434e9e28f5a64edfbf56927c4c112328,

title = "The effects of UV treatment on thermal and plasma-enhanced atomic layer deposition of ZnO thin film transistor",

abstract = "We investigated the ultraviolet (UV) light photostability of plasma-enhanced and thermal atomic layer deposition of ZnO thin film transistor (TFT). The negative shift of threshold voltage was similarly observed in both cases by UV exposure due to the increment of carrier concentration. Additionally, the transfer curves of TFT using thermal ALD ZnO:N active layer were exhibited recovery characteristics.",

author = "Kim, {Jae Min} and Lim, {S. J.} and Doyoung Kim and Hyungjun Kim",

year = "2011",

month = dec,

day = "1",

doi = "10.1063/1.3666664",

language = "English",

isbn = "9780735410022",

series = "AIP Conference Proceedings",

pages = "895--896",

booktitle = "Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30",

note = "30th International Conference on the Physics of Semiconductors, ICPS-30 ; Conference date: 25-07-2010 Through 30-07-2010",

}

Kim, JM, Lim, SJ, Kim, D & Kim, H 2011, The effects of UV treatment on thermal and plasma-enhanced atomic layer deposition of ZnO thin film transistor. in Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30. AIP Conference Proceedings, vol. 1399, pp. 895-896, 30th International Conference on the Physics of Semiconductors, ICPS-30, Seoul, Korea, Republic of, 10/7/25. https://doi.org/10.1063/1.3666664

The effects of UV treatment on thermal and plasma-enhanced atomic layer deposition of ZnO thin film transistor. / Kim, Jae Min; Lim, S. J.; Kim, Doyoung; Kim, Hyungjun.

Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30. 2011. p. 895-896 (AIP Conference Proceedings; Vol. 1399).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - The effects of UV treatment on thermal and plasma-enhanced atomic layer deposition of ZnO thin film transistor

AU - Kim, Jae Min

AU - Lim, S. J.

AU - Kim, Doyoung

AU - Kim, Hyungjun

PY - 2011/12/1

Y1 - 2011/12/1

N2 - We investigated the ultraviolet (UV) light photostability of plasma-enhanced and thermal atomic layer deposition of ZnO thin film transistor (TFT). The negative shift of threshold voltage was similarly observed in both cases by UV exposure due to the increment of carrier concentration. Additionally, the transfer curves of TFT using thermal ALD ZnO:N active layer were exhibited recovery characteristics.

AB - We investigated the ultraviolet (UV) light photostability of plasma-enhanced and thermal atomic layer deposition of ZnO thin film transistor (TFT). The negative shift of threshold voltage was similarly observed in both cases by UV exposure due to the increment of carrier concentration. Additionally, the transfer curves of TFT using thermal ALD ZnO:N active layer were exhibited recovery characteristics.

UR - http://www.scopus.com/inward/record.url?scp=84862801627&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84862801627&partnerID=8YFLogxK

U2 - 10.1063/1.3666664

DO - 10.1063/1.3666664

M3 - Conference contribution

AN - SCOPUS:84862801627

SN - 9780735410022

T3 - AIP Conference Proceedings

SP - 895

EP - 896

BT - Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30

T2 - 30th International Conference on the Physics of Semiconductors, ICPS-30

Y2 - 25 July 2010 through 30 July 2010

ER -

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10.1063/1.3666664