Abstract
We investigated the ultraviolet (UV) light photostability of plasma-enhanced and thermal atomic layer deposition of ZnO thin film transistor (TFT). The negative shift of threshold voltage was similarly observed in both cases by UV exposure due to the increment of carrier concentration. Additionally, the transfer curves of TFT using thermal ALD ZnO:N active layer were exhibited recovery characteristics.
| Original language | English |
|---|---|
| Title of host publication | Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30 |
| Pages | 895-896 |
| Number of pages | 2 |
| DOIs | |
| Publication status | Published - 2011 Dec 1 |
| Event | 30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of Duration: 2010 Jul 25 → 2010 Jul 30 |
Publication series
| Name | AIP Conference Proceedings |
|---|---|
| Volume | 1399 |
| ISSN (Print) | 0094-243X |
| ISSN (Electronic) | 1551-7616 |
Other
| Other | 30th International Conference on the Physics of Semiconductors, ICPS-30 |
|---|---|
| Country | Korea, Republic of |
| City | Seoul |
| Period | 10/7/25 → 10/7/30 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
Cite this
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The effects of UV treatment on thermal and plasma-enhanced atomic layer deposition of ZnO thin film transistor. / Kim, Jae Min; Lim, S. J.; Kim, Doyoung; Kim, Hyungjun.
Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30. 2011. p. 895-896 (AIP Conference Proceedings; Vol. 1399).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - The effects of UV treatment on thermal and plasma-enhanced atomic layer deposition of ZnO thin film transistor
AU - Kim, Jae Min
AU - Lim, S. J.
AU - Kim, Doyoung
AU - Kim, Hyungjun
PY - 2011/12/1
Y1 - 2011/12/1
N2 - We investigated the ultraviolet (UV) light photostability of plasma-enhanced and thermal atomic layer deposition of ZnO thin film transistor (TFT). The negative shift of threshold voltage was similarly observed in both cases by UV exposure due to the increment of carrier concentration. Additionally, the transfer curves of TFT using thermal ALD ZnO:N active layer were exhibited recovery characteristics.
AB - We investigated the ultraviolet (UV) light photostability of plasma-enhanced and thermal atomic layer deposition of ZnO thin film transistor (TFT). The negative shift of threshold voltage was similarly observed in both cases by UV exposure due to the increment of carrier concentration. Additionally, the transfer curves of TFT using thermal ALD ZnO:N active layer were exhibited recovery characteristics.
UR - http://www.scopus.com/inward/record.url?scp=84862801627&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84862801627&partnerID=8YFLogxK
U2 - 10.1063/1.3666664
DO - 10.1063/1.3666664
M3 - Conference contribution
AN - SCOPUS:84862801627
SN - 9780735410022
T3 - AIP Conference Proceedings
SP - 895
EP - 896
BT - Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
ER -