TY - GEN
T1 - The effects of UV treatment on thermal and plasma-enhanced atomic layer deposition of ZnO thin film transistor
AU - Kim, Jae Min
AU - Lim, S. J.
AU - Kim, Doyoung
AU - Kim, Hyungjun
N1 - Copyright:
Copyright 2012 Elsevier B.V., All rights reserved.
PY - 2011
Y1 - 2011
N2 - We investigated the ultraviolet (UV) light photostability of plasma-enhanced and thermal atomic layer deposition of ZnO thin film transistor (TFT). The negative shift of threshold voltage was similarly observed in both cases by UV exposure due to the increment of carrier concentration. Additionally, the transfer curves of TFT using thermal ALD ZnO:N active layer were exhibited recovery characteristics.
AB - We investigated the ultraviolet (UV) light photostability of plasma-enhanced and thermal atomic layer deposition of ZnO thin film transistor (TFT). The negative shift of threshold voltage was similarly observed in both cases by UV exposure due to the increment of carrier concentration. Additionally, the transfer curves of TFT using thermal ALD ZnO:N active layer were exhibited recovery characteristics.
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U2 - 10.1063/1.3666664
DO - 10.1063/1.3666664
M3 - Conference contribution
AN - SCOPUS:84862801627
SN - 9780735410022
T3 - AIP Conference Proceedings
SP - 895
EP - 896
BT - Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
T2 - 30th International Conference on the Physics of Semiconductors, ICPS-30
Y2 - 25 July 2010 through 30 July 2010
ER -