The effects of UV treatment on thermal and plasma-enhanced atomic layer deposition of ZnO thin film transistor

Jae Min Kim, S. J. Lim, Doyoung Kim, Hyungjun Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigated the ultraviolet (UV) light photostability of plasma-enhanced and thermal atomic layer deposition of ZnO thin film transistor (TFT). The negative shift of threshold voltage was similarly observed in both cases by UV exposure due to the increment of carrier concentration. Additionally, the transfer curves of TFT using thermal ALD ZnO:N active layer were exhibited recovery characteristics.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
Pages895-896
Number of pages2
DOIs
Publication statusPublished - 2011 Dec 1
Event30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of
Duration: 2010 Jul 252010 Jul 30

Publication series

NameAIP Conference Proceedings
Volume1399
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other30th International Conference on the Physics of Semiconductors, ICPS-30
CountryKorea, Republic of
CitySeoul
Period10/7/2510/7/30

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Kim, J. M., Lim, S. J., Kim, D., & Kim, H. (2011). The effects of UV treatment on thermal and plasma-enhanced atomic layer deposition of ZnO thin film transistor. In Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30 (pp. 895-896). (AIP Conference Proceedings; Vol. 1399). https://doi.org/10.1063/1.3666664