Abstract
We investigated the ultraviolet (UV) light photostability of plasma-enhanced and thermal atomic layer deposition of ZnO thin film transistor (TFT). The negative shift of threshold voltage was similarly observed in both cases by UV exposure due to the increment of carrier concentration. Additionally, the transfer curves of TFT using thermal ALD ZnO:N active layer were exhibited recovery characteristics.
| Original language | English |
|---|---|
| Title of host publication | Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30 |
| Pages | 895-896 |
| Number of pages | 2 |
| DOIs | |
| Publication status | Published - 2011 |
| Event | 30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of Duration: 2010 Jul 25 → 2010 Jul 30 |
Publication series
| Name | AIP Conference Proceedings |
|---|---|
| Volume | 1399 |
| ISSN (Print) | 0094-243X |
| ISSN (Electronic) | 1551-7616 |
Other
| Other | 30th International Conference on the Physics of Semiconductors, ICPS-30 |
|---|---|
| Country | Korea, Republic of |
| City | Seoul |
| Period | 10/7/25 → 10/7/30 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
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Cite this
Kim, J. M., Lim, S. J., Kim, D., & Kim, H. (2011). The effects of UV treatment on thermal and plasma-enhanced atomic layer deposition of ZnO thin film transistor. In Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30 (pp. 895-896). (AIP Conference Proceedings; Vol. 1399). https://doi.org/10.1063/1.3666664