The electrical characteristics of the MOSCAP structures with W/WNx/poly Si1-xGeX gates stack

S. K. Kang, J. J. Kim, D. H. Ko, T. H. Ahn, I. S. Yeo, T. W. Lee, Y. H. Lee

Research output: Contribution to journalConference article

Abstract

We investigated the electrical characteristics of the MOSCAP structures with W/WNx/poly Si1-xGex gates stack using C-V and I-V. The low frequency C-V measurements demonstrated that the flat band voltage of the W/WNx/poly Si0.4Ge0.6 stack was lower than that of W/WNx/poly Si0.2Ge0.8 stack by 0.3V, and showed less gate-poly-depletion-effect than that of W/WNx/poly- Si0.2Ge0.8 gates due to the increase of dopant activation rate with the increase of Ge content in the poly Si1-xGex films. As Ge content in poly Si1-xGex increased, the leakage current level increased a little due to the increase of direct tunneling and QBD became higher due to the lower boron penetration.

Original languageEnglish
Pages (from-to)K591-K596
JournalMaterials Research Society Symposium - Proceedings
Volume670
DOIs
Publication statusPublished - 2001
EventGate Stack and Silicide Issues in Silicon Processing II - San Francisco, CA, United States
Duration: 2001 Apr 172001 Apr 19

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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