The electrical characteristics of the MOSCAP structures with W/WNx/poly Si1-xGeX gates stack

S. K. Kang, J. J. Kim, D. H. Ko, T. H. Ahn, I. S. Yeo, T. W. Lee, Y. H. Lee

Research output: Contribution to journalConference article

Abstract

We investigated the electrical characteristics of the MOSCAP structures with W/WNx/poly Si1-xGex gates stack using C-V and I-V. The low frequency C-V measurements demonstrated that the flat band voltage of the W/WNx/poly Si0.4Ge0.6 stack was lower than that of W/WNx/poly Si0.2Ge0.8 stack by 0.3V, and showed less gate-poly-depletion-effect than that of W/WNx/poly- Si0.2Ge0.8 gates due to the increase of dopant activation rate with the increase of Ge content in the poly Si1-xGex films. As Ge content in poly Si1-xGex increased, the leakage current level increased a little due to the increase of direct tunneling and QBD became higher due to the lower boron penetration.

Original languageEnglish
Pages (from-to)K591-K596
JournalMaterials Research Society Symposium - Proceedings
Volume670
Publication statusPublished - 2001 Dec 1
EventGate Stack and Silicide Issues in Silicon Processing II - San Francisco, CA, United States
Duration: 2001 Apr 172001 Apr 19

Fingerprint

Boron
Leakage currents
Chemical activation
Doping (additives)
Electric potential
depletion
boron
leakage
penetration
activation
low frequencies
electric potential

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Kang, S. K., Kim, J. J., Ko, D. H., Ahn, T. H., Yeo, I. S., Lee, T. W., & Lee, Y. H. (2001). The electrical characteristics of the MOSCAP structures with W/WNx/poly Si1-xGeX gates stack. Materials Research Society Symposium - Proceedings, 670, K591-K596.
Kang, S. K. ; Kim, J. J. ; Ko, D. H. ; Ahn, T. H. ; Yeo, I. S. ; Lee, T. W. ; Lee, Y. H. / The electrical characteristics of the MOSCAP structures with W/WNx/poly Si1-xGeX gates stack. In: Materials Research Society Symposium - Proceedings. 2001 ; Vol. 670. pp. K591-K596.
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The electrical characteristics of the MOSCAP structures with W/WNx/poly Si1-xGeX gates stack. / Kang, S. K.; Kim, J. J.; Ko, D. H.; Ahn, T. H.; Yeo, I. S.; Lee, T. W.; Lee, Y. H.

In: Materials Research Society Symposium - Proceedings, Vol. 670, 01.12.2001, p. K591-K596.

Research output: Contribution to journalConference article

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T1 - The electrical characteristics of the MOSCAP structures with W/WNx/poly Si1-xGeX gates stack

AU - Kang, S. K.

AU - Kim, J. J.

AU - Ko, D. H.

AU - Ahn, T. H.

AU - Yeo, I. S.

AU - Lee, T. W.

AU - Lee, Y. H.

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N2 - We investigated the electrical characteristics of the MOSCAP structures with W/WNx/poly Si1-xGex gates stack using C-V and I-V. The low frequency C-V measurements demonstrated that the flat band voltage of the W/WNx/poly Si0.4Ge0.6 stack was lower than that of W/WNx/poly Si0.2Ge0.8 stack by 0.3V, and showed less gate-poly-depletion-effect than that of W/WNx/poly- Si0.2Ge0.8 gates due to the increase of dopant activation rate with the increase of Ge content in the poly Si1-xGex films. As Ge content in poly Si1-xGex increased, the leakage current level increased a little due to the increase of direct tunneling and QBD became higher due to the lower boron penetration.

AB - We investigated the electrical characteristics of the MOSCAP structures with W/WNx/poly Si1-xGex gates stack using C-V and I-V. The low frequency C-V measurements demonstrated that the flat band voltage of the W/WNx/poly Si0.4Ge0.6 stack was lower than that of W/WNx/poly Si0.2Ge0.8 stack by 0.3V, and showed less gate-poly-depletion-effect than that of W/WNx/poly- Si0.2Ge0.8 gates due to the increase of dopant activation rate with the increase of Ge content in the poly Si1-xGex films. As Ge content in poly Si1-xGex increased, the leakage current level increased a little due to the increase of direct tunneling and QBD became higher due to the lower boron penetration.

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