The electrical properties of atomic layer deposition of ZnO:N thin film transistors by ultraviolet exposure

Jae Min Kim, S. J. Lim, Hyungjun Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We investigated the ultraviolet (UV) light photostability of nitrogen doped atomic layer deposition (ALD) ZnO:N thin film transistor (TFT). ALD ZnO:N thin films were used as active layers for back-gate TFT devices. The as-fabricated ALD ZnO:N TFT grown at 125 °C shows proper drain current modulation by gate voltage sweep with 5.4 V of threshold voltage and clear pinch-off. However, the threshold voltage was significantly shifted to negative direction by UV exposure due to the increment of carrier concentration, producing the TFT device with no modulation by gate voltage. In addition, we observed the resistivity change of ALD ZnO:N thin films with time after UV exposure. The resistivity decreased by UV light exposure from 1581 to 4.532 Ω cm and then it recovered toward its original value after switching off UV light. Accordingly, the transfer curves of TFT device using ZnO:N active layer were also exhibited recovery characteristics. We adopted a thin Al2O3 passivation layer on the top surface of TFT and observed that the recovery effect was effectively suppressed.

Original languageEnglish
Title of host publicationThin Film Transistors 10, TFT 10
Pages301-311
Number of pages11
Edition5
DOIs
Publication statusPublished - 2010 Dec 1
Event10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting - Las Vegas, NV, United States
Duration: 2010 Oct 112010 Oct 15

Publication series

NameECS Transactions
Number5
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period10/10/1110/10/15

Fingerprint

Atomic layer deposition
Thin film transistors
Electric properties
Threshold voltage
Modulation
Recovery
Thin films
Drain current
Electric potential
Passivation
Carrier concentration
Nitrogen
Ultraviolet Rays

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Kim, J. M., Lim, S. J., & Kim, H. (2010). The electrical properties of atomic layer deposition of ZnO:N thin film transistors by ultraviolet exposure. In Thin Film Transistors 10, TFT 10 (5 ed., pp. 301-311). (ECS Transactions; Vol. 33, No. 5). https://doi.org/10.1149/1.3481251
Kim, Jae Min ; Lim, S. J. ; Kim, Hyungjun. / The electrical properties of atomic layer deposition of ZnO:N thin film transistors by ultraviolet exposure. Thin Film Transistors 10, TFT 10. 5. ed. 2010. pp. 301-311 (ECS Transactions; 5).
@inproceedings{88615210a54244d1ad2acdd888ab98e9,
title = "The electrical properties of atomic layer deposition of ZnO:N thin film transistors by ultraviolet exposure",
abstract = "We investigated the ultraviolet (UV) light photostability of nitrogen doped atomic layer deposition (ALD) ZnO:N thin film transistor (TFT). ALD ZnO:N thin films were used as active layers for back-gate TFT devices. The as-fabricated ALD ZnO:N TFT grown at 125 °C shows proper drain current modulation by gate voltage sweep with 5.4 V of threshold voltage and clear pinch-off. However, the threshold voltage was significantly shifted to negative direction by UV exposure due to the increment of carrier concentration, producing the TFT device with no modulation by gate voltage. In addition, we observed the resistivity change of ALD ZnO:N thin films with time after UV exposure. The resistivity decreased by UV light exposure from 1581 to 4.532 Ω cm and then it recovered toward its original value after switching off UV light. Accordingly, the transfer curves of TFT device using ZnO:N active layer were also exhibited recovery characteristics. We adopted a thin Al2O3 passivation layer on the top surface of TFT and observed that the recovery effect was effectively suppressed.",
author = "Kim, {Jae Min} and Lim, {S. J.} and Hyungjun Kim",
year = "2010",
month = "12",
day = "1",
doi = "10.1149/1.3481251",
language = "English",
isbn = "9781566778244",
series = "ECS Transactions",
number = "5",
pages = "301--311",
booktitle = "Thin Film Transistors 10, TFT 10",
edition = "5",

}

Kim, JM, Lim, SJ & Kim, H 2010, The electrical properties of atomic layer deposition of ZnO:N thin film transistors by ultraviolet exposure. in Thin Film Transistors 10, TFT 10. 5 edn, ECS Transactions, no. 5, vol. 33, pp. 301-311, 10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting, Las Vegas, NV, United States, 10/10/11. https://doi.org/10.1149/1.3481251

The electrical properties of atomic layer deposition of ZnO:N thin film transistors by ultraviolet exposure. / Kim, Jae Min; Lim, S. J.; Kim, Hyungjun.

Thin Film Transistors 10, TFT 10. 5. ed. 2010. p. 301-311 (ECS Transactions; Vol. 33, No. 5).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - The electrical properties of atomic layer deposition of ZnO:N thin film transistors by ultraviolet exposure

AU - Kim, Jae Min

AU - Lim, S. J.

AU - Kim, Hyungjun

PY - 2010/12/1

Y1 - 2010/12/1

N2 - We investigated the ultraviolet (UV) light photostability of nitrogen doped atomic layer deposition (ALD) ZnO:N thin film transistor (TFT). ALD ZnO:N thin films were used as active layers for back-gate TFT devices. The as-fabricated ALD ZnO:N TFT grown at 125 °C shows proper drain current modulation by gate voltage sweep with 5.4 V of threshold voltage and clear pinch-off. However, the threshold voltage was significantly shifted to negative direction by UV exposure due to the increment of carrier concentration, producing the TFT device with no modulation by gate voltage. In addition, we observed the resistivity change of ALD ZnO:N thin films with time after UV exposure. The resistivity decreased by UV light exposure from 1581 to 4.532 Ω cm and then it recovered toward its original value after switching off UV light. Accordingly, the transfer curves of TFT device using ZnO:N active layer were also exhibited recovery characteristics. We adopted a thin Al2O3 passivation layer on the top surface of TFT and observed that the recovery effect was effectively suppressed.

AB - We investigated the ultraviolet (UV) light photostability of nitrogen doped atomic layer deposition (ALD) ZnO:N thin film transistor (TFT). ALD ZnO:N thin films were used as active layers for back-gate TFT devices. The as-fabricated ALD ZnO:N TFT grown at 125 °C shows proper drain current modulation by gate voltage sweep with 5.4 V of threshold voltage and clear pinch-off. However, the threshold voltage was significantly shifted to negative direction by UV exposure due to the increment of carrier concentration, producing the TFT device with no modulation by gate voltage. In addition, we observed the resistivity change of ALD ZnO:N thin films with time after UV exposure. The resistivity decreased by UV light exposure from 1581 to 4.532 Ω cm and then it recovered toward its original value after switching off UV light. Accordingly, the transfer curves of TFT device using ZnO:N active layer were also exhibited recovery characteristics. We adopted a thin Al2O3 passivation layer on the top surface of TFT and observed that the recovery effect was effectively suppressed.

UR - http://www.scopus.com/inward/record.url?scp=79952683320&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79952683320&partnerID=8YFLogxK

U2 - 10.1149/1.3481251

DO - 10.1149/1.3481251

M3 - Conference contribution

AN - SCOPUS:79952683320

SN - 9781566778244

T3 - ECS Transactions

SP - 301

EP - 311

BT - Thin Film Transistors 10, TFT 10

ER -

Kim JM, Lim SJ, Kim H. The electrical properties of atomic layer deposition of ZnO:N thin film transistors by ultraviolet exposure. In Thin Film Transistors 10, TFT 10. 5 ed. 2010. p. 301-311. (ECS Transactions; 5). https://doi.org/10.1149/1.3481251