Abstract
We investigated the ultraviolet (UV) light photostability of nitrogen doped atomic layer deposition (ALD) ZnO:N thin film transistor (TFT). ALD ZnO:N thin films were used as active layers for back-gate TFT devices. The as-fabricated ALD ZnO:N TFT grown at 125 °C shows proper drain current modulation by gate voltage sweep with 5.4 V of threshold voltage and clear pinch-off. However, the threshold voltage was significantly shifted to negative direction by UV exposure due to the increment of carrier concentration, producing the TFT device with no modulation by gate voltage. In addition, we observed the resistivity change of ALD ZnO:N thin films with time after UV exposure. The resistivity decreased by UV light exposure from 1581 to 4.532 Ω cm and then it recovered toward its original value after switching off UV light. Accordingly, the transfer curves of TFT device using ZnO:N active layer were also exhibited recovery characteristics. We adopted a thin Al2O3 passivation layer on the top surface of TFT and observed that the recovery effect was effectively suppressed.
| Original language | English |
|---|---|
| Title of host publication | Thin Film Transistors 10, TFT 10 |
| Pages | 301-311 |
| Number of pages | 11 |
| Edition | 5 |
| DOIs | |
| Publication status | Published - 2010 Dec 1 |
| Event | 10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting - Las Vegas, NV, United States Duration: 2010 Oct 11 → 2010 Oct 15 |
Publication series
| Name | ECS Transactions |
|---|---|
| Number | 5 |
| Volume | 33 |
| ISSN (Print) | 1938-5862 |
| ISSN (Electronic) | 1938-6737 |
Other
| Other | 10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting |
|---|---|
| Country | United States |
| City | Las Vegas, NV |
| Period | 10/10/11 → 10/10/15 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
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The electrical properties of atomic layer deposition of ZnO:N thin film transistors by ultraviolet exposure. / Kim, Jae Min; Lim, S. J.; Kim, Hyungjun.
Thin Film Transistors 10, TFT 10. 5. ed. 2010. p. 301-311 (ECS Transactions; Vol. 33, No. 5).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - The electrical properties of atomic layer deposition of ZnO:N thin film transistors by ultraviolet exposure
AU - Kim, Jae Min
AU - Lim, S. J.
AU - Kim, Hyungjun
PY - 2010/12/1
Y1 - 2010/12/1
N2 - We investigated the ultraviolet (UV) light photostability of nitrogen doped atomic layer deposition (ALD) ZnO:N thin film transistor (TFT). ALD ZnO:N thin films were used as active layers for back-gate TFT devices. The as-fabricated ALD ZnO:N TFT grown at 125 °C shows proper drain current modulation by gate voltage sweep with 5.4 V of threshold voltage and clear pinch-off. However, the threshold voltage was significantly shifted to negative direction by UV exposure due to the increment of carrier concentration, producing the TFT device with no modulation by gate voltage. In addition, we observed the resistivity change of ALD ZnO:N thin films with time after UV exposure. The resistivity decreased by UV light exposure from 1581 to 4.532 Ω cm and then it recovered toward its original value after switching off UV light. Accordingly, the transfer curves of TFT device using ZnO:N active layer were also exhibited recovery characteristics. We adopted a thin Al2O3 passivation layer on the top surface of TFT and observed that the recovery effect was effectively suppressed.
AB - We investigated the ultraviolet (UV) light photostability of nitrogen doped atomic layer deposition (ALD) ZnO:N thin film transistor (TFT). ALD ZnO:N thin films were used as active layers for back-gate TFT devices. The as-fabricated ALD ZnO:N TFT grown at 125 °C shows proper drain current modulation by gate voltage sweep with 5.4 V of threshold voltage and clear pinch-off. However, the threshold voltage was significantly shifted to negative direction by UV exposure due to the increment of carrier concentration, producing the TFT device with no modulation by gate voltage. In addition, we observed the resistivity change of ALD ZnO:N thin films with time after UV exposure. The resistivity decreased by UV light exposure from 1581 to 4.532 Ω cm and then it recovered toward its original value after switching off UV light. Accordingly, the transfer curves of TFT device using ZnO:N active layer were also exhibited recovery characteristics. We adopted a thin Al2O3 passivation layer on the top surface of TFT and observed that the recovery effect was effectively suppressed.
UR - http://www.scopus.com/inward/record.url?scp=79952683320&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79952683320&partnerID=8YFLogxK
U2 - 10.1149/1.3481251
DO - 10.1149/1.3481251
M3 - Conference contribution
AN - SCOPUS:79952683320
SN - 9781566778244
T3 - ECS Transactions
SP - 301
EP - 311
BT - Thin Film Transistors 10, TFT 10
ER -