The electrical properties of low pressure chemical vapor deposition Ga doped ZnO thin films depending on chemical bonding configuration

Hanearl Jung, Doyoung Kim, Hyungjun Kim

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

The electrical and chemical properties of low pressure chemical vapor deposition (LP-CVD) Ga doped ZnO (ZnO:Ga) films were systematically investigated using Hall measurement and X-ray photoemission spectroscopy (XPS). Diethylzinc (DEZ) and O 2 gas were used as precursor and reactant gas, respectively, and trimethyl gallium (TMGa) was used as a Ga doping source. Initially, the electrical properties of undoped LP-CVD ZnO films depending on the partial pressure of DEZ and O 2 ratio were investigated using X-ray diffraction (XRD) by changing partial pressure of DEZ from 40 to 140 mTorr and that of O 2 from 40 to 80 mTorr. The resistivity was reduced by Ga doping from 7.24 × 10 -3 Ω cm for undoped ZnO to 2.05 × 10 -3 Ω cm for Ga doped ZnO at the TMG pressure of 8 mTorr. The change of electric properties of Ga doped ZnO with varying the amount of Ga dopants was systematically discussed based on the structural crystallinity and chemical bonding configuration, analyzed by XRD and XPS, respectively.

Original languageEnglish
Pages (from-to)125-129
Number of pages5
JournalApplied Surface Science
Volume297
DOIs
Publication statusPublished - 2014 Apr 1

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Low pressure chemical vapor deposition
Electric properties
Doping (additives)
Photoelectron spectroscopy
X ray spectroscopy
Thin films
Partial pressure
Gases
X ray diffraction
Gallium
Chemical properties
diethylzinc

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

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abstract = "The electrical and chemical properties of low pressure chemical vapor deposition (LP-CVD) Ga doped ZnO (ZnO:Ga) films were systematically investigated using Hall measurement and X-ray photoemission spectroscopy (XPS). Diethylzinc (DEZ) and O 2 gas were used as precursor and reactant gas, respectively, and trimethyl gallium (TMGa) was used as a Ga doping source. Initially, the electrical properties of undoped LP-CVD ZnO films depending on the partial pressure of DEZ and O 2 ratio were investigated using X-ray diffraction (XRD) by changing partial pressure of DEZ from 40 to 140 mTorr and that of O 2 from 40 to 80 mTorr. The resistivity was reduced by Ga doping from 7.24 × 10 -3 Ω cm for undoped ZnO to 2.05 × 10 -3 Ω cm for Ga doped ZnO at the TMG pressure of 8 mTorr. The change of electric properties of Ga doped ZnO with varying the amount of Ga dopants was systematically discussed based on the structural crystallinity and chemical bonding configuration, analyzed by XRD and XPS, respectively.",
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The electrical properties of low pressure chemical vapor deposition Ga doped ZnO thin films depending on chemical bonding configuration. / Jung, Hanearl; Kim, Doyoung; Kim, Hyungjun.

In: Applied Surface Science, Vol. 297, 01.04.2014, p. 125-129.

Research output: Contribution to journalArticle

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