The electrical switching phenomenon of a phase change memory using nitrogen doped Sb2Te3

Seung Yun Lee, Sung Hyuk Cho, Hyung Keun Kim, Jin Ho Oh, Hyeong Joon Kim, Suk Kyoung Hong, Jae Sung Roh, Doo Jin Choi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In order to increase the sheet resistance of Sb2Te3 (ST) thin fdms, nitrogen-doped Sb2Te3 (N-doped ST) thin films were deposited using DC magnetron sputtering. The nitrogen gas flow rate was changed from 0 seem (ST(O)) to 6 seem (ST(6)) during the deposition. The sheet resistances of N-doped ST films rapidly increased as the nitrogen gas flow rate increased. Phase-change random access memory (PRAM) test cells were fabricated using N-doped ST thin films. The threshold voltages of ST(O) and ST(6) PRAM test cells were 1.09 and 0.70 V, respectively. The mismatch problem of 1st and 2nd sweeping was hypothesized to be caused by poor adhesion and Te segregation between the ST film and TiN.

Original languageEnglish
Pages (from-to)433-436
Number of pages4
JournalJournal of Ceramic Processing Research
Volume10
Issue number4
Publication statusPublished - 2009

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites

Fingerprint Dive into the research topics of 'The electrical switching phenomenon of a phase change memory using nitrogen doped Sb<sub>2</sub>Te<sub>3</sub>'. Together they form a unique fingerprint.

  • Cite this

    Lee, S. Y., Cho, S. H., Kim, H. K., Oh, J. H., Kim, H. J., Hong, S. K., Roh, J. S., & Choi, D. J. (2009). The electrical switching phenomenon of a phase change memory using nitrogen doped Sb2Te3. Journal of Ceramic Processing Research, 10(4), 433-436.