The electrical switching phenomenon of a phase change memory using nitrogen doped Sb 2 Te 3

Seung Yun Lee, Sung Hyuk Cho, Hyung Keun Kim, Jin Ho Oh, Hyeong Joon Kim, Suk Kyoung Hong, Jae Sung Roh, Doo Jin Choi

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Abstract

In order to increase the sheet resistance of Sb 2 Te 3 (ST) thin fdms, nitrogen-doped Sb 2 Te 3 (N-doped ST) thin films were deposited using DC magnetron sputtering. The nitrogen gas flow rate was changed from 0 seem (ST(O)) to 6 seem (ST(6)) during the deposition. The sheet resistances of N-doped ST films rapidly increased as the nitrogen gas flow rate increased. Phase-change random access memory (PRAM) test cells were fabricated using N-doped ST thin films. The threshold voltages of ST(O) and ST(6) PRAM test cells were 1.09 and 0.70 V, respectively. The mismatch problem of 1 st and 2 nd sweeping was hypothesized to be caused by poor adhesion and Te segregation between the ST film and TiN.

Original languageEnglish
Pages (from-to)433-436
Number of pages4
JournalJournal of Ceramic Processing Research
Volume10
Issue number4
Publication statusPublished - 2009 Oct 26

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All Science Journal Classification (ASJC) codes

  • Ceramics and Composites

Cite this

Lee, S. Y., Cho, S. H., Kim, H. K., Oh, J. H., Kim, H. J., Hong, S. K., Roh, J. S., & Choi, D. J. (2009). The electrical switching phenomenon of a phase change memory using nitrogen doped Sb 2 Te 3 Journal of Ceramic Processing Research, 10(4), 433-436.