The electrical switching phenomenon of a phase change memory using nitrogen doped Sb 2 Te 3

Seung Yun Lee, Sung Hyuk Cho, Hyung Keun Kim, Jin Ho Oh, Hyeong Joon Kim, Suk Kyoung Hong, Jae Sung Roh, Doo Jin Choi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In order to increase the sheet resistance of Sb 2 Te 3 (ST) thin fdms, nitrogen-doped Sb 2 Te 3 (N-doped ST) thin films were deposited using DC magnetron sputtering. The nitrogen gas flow rate was changed from 0 seem (ST(O)) to 6 seem (ST(6)) during the deposition. The sheet resistances of N-doped ST films rapidly increased as the nitrogen gas flow rate increased. Phase-change random access memory (PRAM) test cells were fabricated using N-doped ST thin films. The threshold voltages of ST(O) and ST(6) PRAM test cells were 1.09 and 0.70 V, respectively. The mismatch problem of 1 st and 2 nd sweeping was hypothesized to be caused by poor adhesion and Te segregation between the ST film and TiN.

Original languageEnglish
Pages (from-to)433-436
Number of pages4
JournalJournal of Ceramic Processing Research
Volume10
Issue number4
Publication statusPublished - 2009 Oct 26

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Phase change memory
Nitrogen
Sheet resistance
Flow of gases
Flow rate
Data storage equipment
Thin films
Threshold voltage
Magnetron sputtering
Adhesion

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites

Cite this

Lee, Seung Yun ; Cho, Sung Hyuk ; Kim, Hyung Keun ; Oh, Jin Ho ; Kim, Hyeong Joon ; Hong, Suk Kyoung ; Roh, Jae Sung ; Choi, Doo Jin. / The electrical switching phenomenon of a phase change memory using nitrogen doped Sb 2 Te 3 In: Journal of Ceramic Processing Research. 2009 ; Vol. 10, No. 4. pp. 433-436.
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Lee, SY, Cho, SH, Kim, HK, Oh, JH, Kim, HJ, Hong, SK, Roh, JS & Choi, DJ 2009, ' The electrical switching phenomenon of a phase change memory using nitrogen doped Sb 2 Te 3 ', Journal of Ceramic Processing Research, vol. 10, no. 4, pp. 433-436.

The electrical switching phenomenon of a phase change memory using nitrogen doped Sb 2 Te 3 . / Lee, Seung Yun; Cho, Sung Hyuk; Kim, Hyung Keun; Oh, Jin Ho; Kim, Hyeong Joon; Hong, Suk Kyoung; Roh, Jae Sung; Choi, Doo Jin.

In: Journal of Ceramic Processing Research, Vol. 10, No. 4, 26.10.2009, p. 433-436.

Research output: Contribution to journalArticle

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AU - Hong, Suk Kyoung

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AU - Choi, Doo Jin

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