In order to increase the sheet resistance of Sb 2 Te 3 (ST) thin fdms, nitrogen-doped Sb 2 Te 3 (N-doped ST) thin films were deposited using DC magnetron sputtering. The nitrogen gas flow rate was changed from 0 seem (ST(O)) to 6 seem (ST(6)) during the deposition. The sheet resistances of N-doped ST films rapidly increased as the nitrogen gas flow rate increased. Phase-change random access memory (PRAM) test cells were fabricated using N-doped ST thin films. The threshold voltages of ST(O) and ST(6) PRAM test cells were 1.09 and 0.70 V, respectively. The mismatch problem of 1 st and 2 nd sweeping was hypothesized to be caused by poor adhesion and Te segregation between the ST film and TiN.
|Number of pages||4|
|Journal||Journal of Ceramic Processing Research|
|Publication status||Published - 2009 Oct 26|
All Science Journal Classification (ASJC) codes
- Ceramics and Composites