The excellent scalability of the RCAT(Recess-Channel-Array-Transistor) technology for sub-70nm DRAM feature size and beyond

J. Y. Kim, D. S. Woo, H. J. Oh, H. J. Kim, S. E. Kim, B. J. Park, J. M. Kwon, M. S. Shim, G. W. Ha, J. W. Song, N. J. Kang, J. M. Park, H. K. Hwang, S. S. Song, Y. S. Hwang, D. I. Kim, D. H. Kim, M. Huh, D. H. Han, C. S. LeeS. J. Park, Y. R. Kim, H. J. Kim, Y. S. Lee, M. Y. Jung, Y. I. Kim, B. H. Lee, M. H. Cho, W. T. Choi, H. S. Kim, G. Y. Jin, Y. J. Park, Kinam Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

The technology innovation for extending the RCAT structure to the sub-70nm DRAM is presented The new technology overcomes the problems induced by shrinkage of the RCAT structure and meets the requirements for the next generation DRAMs, such as high speed and low power performance. The technology roadmap down to the 50nm DRAM feature size of the RCAT development is presented.

Original languageEnglish
Title of host publication2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers
Pages33-34
Number of pages2
Publication statusPublished - 2005 Oct 31
Event2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH - Hsinchu, Taiwan, Province of China
Duration: 2005 Apr 252005 Apr 27

Publication series

Name2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers

Other

Other2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH
CountryTaiwan, Province of China
CityHsinchu
Period05/4/2505/4/27

Fingerprint

Dynamic random access storage
Scalability
Transistors
Innovation

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Kim, J. Y., Woo, D. S., Oh, H. J., Kim, H. J., Kim, S. E., Park, B. J., ... Kim, K. (2005). The excellent scalability of the RCAT(Recess-Channel-Array-Transistor) technology for sub-70nm DRAM feature size and beyond. In 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers (pp. 33-34). [T23] (2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers).
Kim, J. Y. ; Woo, D. S. ; Oh, H. J. ; Kim, H. J. ; Kim, S. E. ; Park, B. J. ; Kwon, J. M. ; Shim, M. S. ; Ha, G. W. ; Song, J. W. ; Kang, N. J. ; Park, J. M. ; Hwang, H. K. ; Song, S. S. ; Hwang, Y. S. ; Kim, D. I. ; Kim, D. H. ; Huh, M. ; Han, D. H. ; Lee, C. S. ; Park, S. J. ; Kim, Y. R. ; Kim, H. J. ; Lee, Y. S. ; Jung, M. Y. ; Kim, Y. I. ; Lee, B. H. ; Cho, M. H. ; Choi, W. T. ; Kim, H. S. ; Jin, G. Y. ; Park, Y. J. ; Kim, Kinam. / The excellent scalability of the RCAT(Recess-Channel-Array-Transistor) technology for sub-70nm DRAM feature size and beyond. 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers. 2005. pp. 33-34 (2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers).
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title = "The excellent scalability of the RCAT(Recess-Channel-Array-Transistor) technology for sub-70nm DRAM feature size and beyond",
abstract = "The technology innovation for extending the RCAT structure to the sub-70nm DRAM is presented The new technology overcomes the problems induced by shrinkage of the RCAT structure and meets the requirements for the next generation DRAMs, such as high speed and low power performance. The technology roadmap down to the 50nm DRAM feature size of the RCAT development is presented.",
author = "Kim, {J. Y.} and Woo, {D. S.} and Oh, {H. J.} and Kim, {H. J.} and Kim, {S. E.} and Park, {B. J.} and Kwon, {J. M.} and Shim, {M. S.} and Ha, {G. W.} and Song, {J. W.} and Kang, {N. J.} and Park, {J. M.} and Hwang, {H. K.} and Song, {S. S.} and Hwang, {Y. S.} and Kim, {D. I.} and Kim, {D. H.} and M. Huh and Han, {D. H.} and Lee, {C. S.} and Park, {S. J.} and Kim, {Y. R.} and Kim, {H. J.} and Lee, {Y. S.} and Jung, {M. Y.} and Kim, {Y. I.} and Lee, {B. H.} and Cho, {M. H.} and Choi, {W. T.} and Kim, {H. S.} and Jin, {G. Y.} and Park, {Y. J.} and Kinam Kim",
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Kim, JY, Woo, DS, Oh, HJ, Kim, HJ, Kim, SE, Park, BJ, Kwon, JM, Shim, MS, Ha, GW, Song, JW, Kang, NJ, Park, JM, Hwang, HK, Song, SS, Hwang, YS, Kim, DI, Kim, DH, Huh, M, Han, DH, Lee, CS, Park, SJ, Kim, YR, Kim, HJ, Lee, YS, Jung, MY, Kim, YI, Lee, BH, Cho, MH, Choi, WT, Kim, HS, Jin, GY, Park, YJ & Kim, K 2005, The excellent scalability of the RCAT(Recess-Channel-Array-Transistor) technology for sub-70nm DRAM feature size and beyond. in 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers., T23, 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers, pp. 33-34, 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Hsinchu, Taiwan, Province of China, 05/4/25.

The excellent scalability of the RCAT(Recess-Channel-Array-Transistor) technology for sub-70nm DRAM feature size and beyond. / Kim, J. Y.; Woo, D. S.; Oh, H. J.; Kim, H. J.; Kim, S. E.; Park, B. J.; Kwon, J. M.; Shim, M. S.; Ha, G. W.; Song, J. W.; Kang, N. J.; Park, J. M.; Hwang, H. K.; Song, S. S.; Hwang, Y. S.; Kim, D. I.; Kim, D. H.; Huh, M.; Han, D. H.; Lee, C. S.; Park, S. J.; Kim, Y. R.; Kim, H. J.; Lee, Y. S.; Jung, M. Y.; Kim, Y. I.; Lee, B. H.; Cho, M. H.; Choi, W. T.; Kim, H. S.; Jin, G. Y.; Park, Y. J.; Kim, Kinam.

2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers. 2005. p. 33-34 T23 (2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - The excellent scalability of the RCAT(Recess-Channel-Array-Transistor) technology for sub-70nm DRAM feature size and beyond

AU - Kim, J. Y.

AU - Woo, D. S.

AU - Oh, H. J.

AU - Kim, H. J.

AU - Kim, S. E.

AU - Park, B. J.

AU - Kwon, J. M.

AU - Shim, M. S.

AU - Ha, G. W.

AU - Song, J. W.

AU - Kang, N. J.

AU - Park, J. M.

AU - Hwang, H. K.

AU - Song, S. S.

AU - Hwang, Y. S.

AU - Kim, D. I.

AU - Kim, D. H.

AU - Huh, M.

AU - Han, D. H.

AU - Lee, C. S.

AU - Park, S. J.

AU - Kim, Y. R.

AU - Kim, H. J.

AU - Lee, Y. S.

AU - Jung, M. Y.

AU - Kim, Y. I.

AU - Lee, B. H.

AU - Cho, M. H.

AU - Choi, W. T.

AU - Kim, H. S.

AU - Jin, G. Y.

AU - Park, Y. J.

AU - Kim, Kinam

PY - 2005/10/31

Y1 - 2005/10/31

N2 - The technology innovation for extending the RCAT structure to the sub-70nm DRAM is presented The new technology overcomes the problems induced by shrinkage of the RCAT structure and meets the requirements for the next generation DRAMs, such as high speed and low power performance. The technology roadmap down to the 50nm DRAM feature size of the RCAT development is presented.

AB - The technology innovation for extending the RCAT structure to the sub-70nm DRAM is presented The new technology overcomes the problems induced by shrinkage of the RCAT structure and meets the requirements for the next generation DRAMs, such as high speed and low power performance. The technology roadmap down to the 50nm DRAM feature size of the RCAT development is presented.

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M3 - Conference contribution

AN - SCOPUS:27144546686

SN - 078039058X

T3 - 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers

SP - 33

EP - 34

BT - 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers

ER -

Kim JY, Woo DS, Oh HJ, Kim HJ, Kim SE, Park BJ et al. The excellent scalability of the RCAT(Recess-Channel-Array-Transistor) technology for sub-70nm DRAM feature size and beyond. In 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers. 2005. p. 33-34. T23. (2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers).