The excellent scalability of the RCAT(Recess-Channel-Array-Transistor) technology for sub-70nm DRAM feature size and beyond

J. Y. Kim; D. S. Woo; H. J. Oh; H. J. Kim; S. E. Kim; B. J. Park; J. M. Kwon; M. S. Shim; G. W. Ha; J. W. Song; N. J. Kang; J. M. Park; H. K. Hwang; S. S. Song; Y. S. Hwang; D. I. Kim; D. H. Kim; M. Huh; D. H. Han; C. S. Lee; S. J. Park; Y. R. Kim; H. J. Kim; Y. S. Lee; M. Y. Jung; Y. I. Kim; B. H. Lee; M. H. Cho; W. T. Choi; H. S. Kim; G. Y. Jin; Y. J. Park; Kinam Kim

The excellent scalability of the RCAT(Recess-Channel-Array-Transistor) technology for sub-70nm DRAM feature size and beyond

J. Y. Kim, D. S. Woo, H. J. Oh, H. J. Kim, S. E. Kim, B. J. Park, J. M. Kwon, M. S. Shim, G. W. Ha, J. W. Song, N. J. Kang, J. M. Park, H. K. Hwang, S. S. Song, Y. S. Hwang, D. I. Kim, D. H. Kim, M. Huh, D. H. Han, C. S. LeeS. J. Park, Y. R. Kim, H. J. Kim, Y. S. Lee, M. Y. Jung, Y. I. Kim, B. H. Lee, M. H. Cho, W. T. Choi, H. S. Kim, G. Y. Jin, Y. J. Park, Kinam Kim

Department of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

8 Citations (Scopus)

Abstract

The technology innovation for extending the RCAT structure to the sub-70nm DRAM is presented The new technology overcomes the problems induced by shrinkage of the RCAT structure and meets the requirements for the next generation DRAMs, such as high speed and low power performance. The technology roadmap down to the 50nm DRAM feature size of the RCAT development is presented.

Original language	English
Title of host publication	2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers
Pages	33-34
Number of pages	2
Publication status	Published - 2005
Event	2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH - Hsinchu, Taiwan, Province of China Duration: 2005 Apr 25 → 2005 Apr 27

Publication series

Name	2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers

Other

Other	2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH
Country/Territory	Taiwan, Province of China
City	Hsinchu
Period	05/4/25 → 05/4/27

All Science Journal Classification (ASJC) codes

Engineering(all)

Cite this

Kim, J. Y., Woo, D. S., Oh, H. J., Kim, H. J., Kim, S. E., Park, B. J., Kwon, J. M., Shim, M. S., Ha, G. W., Song, J. W., Kang, N. J., Park, J. M., Hwang, H. K., Song, S. S., Hwang, Y. S., Kim, D. I., Kim, D. H., Huh, M., Han, D. H., ... Kim, K. (2005). The excellent scalability of the RCAT(Recess-Channel-Array-Transistor) technology for sub-70nm DRAM feature size and beyond. In 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers (pp. 33-34). [T23] (2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers).

Kim, J. Y. ; Woo, D. S. ; Oh, H. J. et al. / The excellent scalability of the RCAT(Recess-Channel-Array-Transistor) technology for sub-70nm DRAM feature size and beyond. 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers. 2005. pp. 33-34 (2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers).

@inproceedings{342aaa9b291a4113b25c89f3ae43e169,

title = "The excellent scalability of the RCAT(Recess-Channel-Array-Transistor) technology for sub-70nm DRAM feature size and beyond",

abstract = "The technology innovation for extending the RCAT structure to the sub-70nm DRAM is presented The new technology overcomes the problems induced by shrinkage of the RCAT structure and meets the requirements for the next generation DRAMs, such as high speed and low power performance. The technology roadmap down to the 50nm DRAM feature size of the RCAT development is presented.",

author = "Kim, {J. Y.} and Woo, {D. S.} and Oh, {H. J.} and Kim, {H. J.} and Kim, {S. E.} and Park, {B. J.} and Kwon, {J. M.} and Shim, {M. S.} and Ha, {G. W.} and Song, {J. W.} and Kang, {N. J.} and Park, {J. M.} and Hwang, {H. K.} and Song, {S. S.} and Hwang, {Y. S.} and Kim, {D. I.} and Kim, {D. H.} and M. Huh and Han, {D. H.} and Lee, {C. S.} and Park, {S. J.} and Kim, {Y. R.} and Kim, {H. J.} and Lee, {Y. S.} and Jung, {M. Y.} and Kim, {Y. I.} and Lee, {B. H.} and Cho, {M. H.} and Choi, {W. T.} and Kim, {H. S.} and Jin, {G. Y.} and Park, {Y. J.} and Kinam Kim",

year = "2005",

language = "English",

isbn = "078039058X",

series = "2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers",

pages = "33--34",

booktitle = "2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers",

note = "2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH ; Conference date: 25-04-2005 Through 27-04-2005",

}

Kim, JY, Woo, DS, Oh, HJ, Kim, HJ, Kim, SE, Park, BJ, Kwon, JM, Shim, MS, Ha, GW, Song, JW, Kang, NJ, Park, JM, Hwang, HK, Song, SS, Hwang, YS, Kim, DI, Kim, DH, Huh, M, Han, DH, Lee, CS, Park, SJ, Kim, YR, Kim, HJ, Lee, YS, Jung, MY, Kim, YI, Lee, BH, Cho, MH, Choi, WT, Kim, HS, Jin, GY, Park, YJ & Kim, K 2005, The excellent scalability of the RCAT(Recess-Channel-Array-Transistor) technology for sub-70nm DRAM feature size and beyond. in 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers., T23, 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers, pp. 33-34, 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Hsinchu, Taiwan, Province of China, 05/4/25.

The excellent scalability of the RCAT(Recess-Channel-Array-Transistor) technology for sub-70nm DRAM feature size and beyond. / Kim, J. Y.; Woo, D. S.; Oh, H. J. et al.

2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers. 2005. p. 33-34 T23 (2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - The excellent scalability of the RCAT(Recess-Channel-Array-Transistor) technology for sub-70nm DRAM feature size and beyond

AU - Kim, J. Y.

AU - Woo, D. S.

AU - Oh, H. J.

AU - Kim, H. J.

AU - Kim, S. E.

AU - Park, B. J.

AU - Kwon, J. M.

AU - Shim, M. S.

AU - Ha, G. W.

AU - Song, J. W.

AU - Kang, N. J.

AU - Park, J. M.

AU - Hwang, H. K.

AU - Song, S. S.

AU - Hwang, Y. S.

AU - Kim, D. I.

AU - Kim, D. H.

AU - Huh, M.

AU - Han, D. H.

AU - Lee, C. S.

AU - Park, S. J.

AU - Kim, Y. R.

AU - Kim, H. J.

AU - Lee, Y. S.

AU - Jung, M. Y.

AU - Kim, Y. I.

AU - Lee, B. H.

AU - Cho, M. H.

AU - Choi, W. T.

AU - Kim, H. S.

AU - Jin, G. Y.

AU - Park, Y. J.

AU - Kim, Kinam

PY - 2005

Y1 - 2005

N2 - The technology innovation for extending the RCAT structure to the sub-70nm DRAM is presented The new technology overcomes the problems induced by shrinkage of the RCAT structure and meets the requirements for the next generation DRAMs, such as high speed and low power performance. The technology roadmap down to the 50nm DRAM feature size of the RCAT development is presented.

AB - The technology innovation for extending the RCAT structure to the sub-70nm DRAM is presented The new technology overcomes the problems induced by shrinkage of the RCAT structure and meets the requirements for the next generation DRAMs, such as high speed and low power performance. The technology roadmap down to the 50nm DRAM feature size of the RCAT development is presented.

UR - http://www.scopus.com/inward/record.url?scp=27144546686&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=27144546686&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:27144546686

SN - 078039058X

T3 - 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers

SP - 33

EP - 34

BT - 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers

T2 - 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH

Y2 - 25 April 2005 through 27 April 2005

ER -

Kim JY, Woo DS, Oh HJ, Kim HJ, Kim SE, Park BJ et al. The excellent scalability of the RCAT(Recess-Channel-Array-Transistor) technology for sub-70nm DRAM feature size and beyond. In 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers. 2005. p. 33-34. T23. (2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers).

The excellent scalability of the RCAT(Recess-Channel-Array-Transistor) technology for sub-70nm DRAM feature size and beyond

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

Other files and links

Fingerprint

Cite this