The excellent scalability of the RCAT(Recess-Channel-Array-Transistor) technology for sub-70nm DRAM feature size and beyond

J. Y. Kim, D. S. Woo, H. J. Oh, H. J. Kim, S. E. Kim, B. J. Park, J. M. Kwon, M. S. Shim, G. W. Ha, J. W. Song, N. J. Kang, J. M. Park, H. K. Hwang, S. S. Song, Y. S. Hwang, D. I. Kim, D. H. Kim, M. Huh, D. H. Han, C. S. LeeS. J. Park, Y. R. Kim, H. J. Kim, Y. S. Lee, M. Y. Jung, Y. I. Kim, B. H. Lee, M. H. Cho, W. T. Choi, H. S. Kim, G. Y. Jin, Y. J. Park, Kinam Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

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Engineering & Materials Science