The fabrication and characterization of ZnO UV detector

Tae Hyoung Moon, Min Chang Jeong, Woong Lee, Jae Min Myoung

Research output: Contribution to journalArticlepeer-review

148 Citations (Scopus)


ZnO films were deposited on GaAs substrates by radio frequency (rf) magnetron sputtering followed by an ambient-controlled heat treatment process for arsenic doping. In Hall measurements, the As-doped ZnO films showed the characteristics of p-type semiconductor. The ZnO thin film p-n homojuctions were then fabricated to investigate the electrical properties of the films. The p-n homojunctions exhibited the distinct rectifying current-voltage (I-V) characteristics. The turn-on voltage was measured to be ∼3.0 V under the forward bias. When ultraviolet (UV) light (λ = 325 nm) was irradiated on the p-n homojunction, photocurrent of ∼2 mA was detected. Based on these results, it is proposed that the p-n homojunction herein is a potential candidate for UV photodetector and optical devices.

Original languageEnglish
Pages (from-to)280-285
Number of pages6
JournalApplied Surface Science
Issue number1-4
Publication statusPublished - 2005 Feb 15

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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