The fabrication of metal silicide nanodot arrays using localized ion implantation

Jin Han, Tae Gon Kim, Byung-Kwon Min, Sang Jo Lee

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We propose a process for fabricating nanodot arrays with a pitch size of less than 25 nm. The process consists of localized ion implantation in a metal thin film on a Si wafer using a focused ion beam (FIB), followed by chemical etching. This process utilizes the etching resistivity changes of the ion beam irradiated region that result from metal silicide formation by ion implantation. To control the nanodot diameter, a threshold ion dose model is proposed using the Gaussian distribution of the ion beam intensities. The process is verified by fabricating nanodots with various diameters. The mechanism of etching resistivity is investigated via x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES).

Original languageEnglish
Article number485303
JournalNanotechnology
Volume21
Issue number48
DOIs
Publication statusPublished - 2010 Dec 3

Fingerprint

Ion implantation
Etching
Metals
Fabrication
Ion beams
Focused ion beams
Gaussian distribution
Auger electron spectroscopy
Photoelectron spectroscopy
Ions
X rays
Thin films

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

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The fabrication of metal silicide nanodot arrays using localized ion implantation. / Han, Jin; Kim, Tae Gon; Min, Byung-Kwon; Lee, Sang Jo.

In: Nanotechnology, Vol. 21, No. 48, 485303, 03.12.2010.

Research output: Contribution to journalArticle

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