The field emission characteristics of a-C:H thin films prepared by helical resonator plasma enhanced chemical vapor deposition

Soon Joon Rho, Jae Yeob Shim, Eung Joon Chi, Hong Koo Baik, Sung Man Lee

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

The field emission characteristics of hydrogenated amorphous carbon (a-C:H) films prepared by helical resonator-plasma enhanced chemical vapor deposition (HR-PECVD) are examined. a-C:H films are deposited with CH4/H2 and CH4/Ar gases under different substrate RF bias conditions. The properties of a-C:H films are investigated by Raman spectroscopy, Fourier transform IR (FT-IR), UV spectroscopy and elastic recoil detection (ERD). Field emission characteristics of a-C:H coated on Si whiskers which are grown by the vapor-liquid-solid (VLS) method are tested under ultrahigh vacuum. Highly efficient field emission characteristics are achieved in the specimen deposited at a substrate RF bias higher rather than in the ground deposition condition regardless of the nature of the reactant gas. As the substrate RF bias is changed from ground to a higher RF substrate bias, the deposited a-C:H films have lower hydrogen contents and higher sp2-bonds. Therefore, the field emission characteristics of a-C:H thin films are affected by the hydrogen contents of the films rather than by the sp3/sp2 ratio.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume36
Issue number8 PART A
Publication statusPublished - 1997 Aug 1

Fingerprint

Plasma enhanced chemical vapor deposition
Field emission
Resonators
field emission
resonators
vapor deposition
Thin films
thin films
Hydrogen
Substrates
Amorphous carbon
Ultrahigh vacuum
hydrogen
Ultraviolet spectroscopy
Gases
gases
ultrahigh vacuum
Raman spectroscopy
Fourier transforms
Vapors

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

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title = "The field emission characteristics of a-C:H thin films prepared by helical resonator plasma enhanced chemical vapor deposition",
abstract = "The field emission characteristics of hydrogenated amorphous carbon (a-C:H) films prepared by helical resonator-plasma enhanced chemical vapor deposition (HR-PECVD) are examined. a-C:H films are deposited with CH4/H2 and CH4/Ar gases under different substrate RF bias conditions. The properties of a-C:H films are investigated by Raman spectroscopy, Fourier transform IR (FT-IR), UV spectroscopy and elastic recoil detection (ERD). Field emission characteristics of a-C:H coated on Si whiskers which are grown by the vapor-liquid-solid (VLS) method are tested under ultrahigh vacuum. Highly efficient field emission characteristics are achieved in the specimen deposited at a substrate RF bias higher rather than in the ground deposition condition regardless of the nature of the reactant gas. As the substrate RF bias is changed from ground to a higher RF substrate bias, the deposited a-C:H films have lower hydrogen contents and higher sp2-bonds. Therefore, the field emission characteristics of a-C:H thin films are affected by the hydrogen contents of the films rather than by the sp3/sp2 ratio.",
author = "Rho, {Soon Joon} and Shim, {Jae Yeob} and Chi, {Eung Joon} and Baik, {Hong Koo} and Lee, {Sung Man}",
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The field emission characteristics of a-C:H thin films prepared by helical resonator plasma enhanced chemical vapor deposition. / Rho, Soon Joon; Shim, Jae Yeob; Chi, Eung Joon; Baik, Hong Koo; Lee, Sung Man.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 36, No. 8 PART A, 01.08.1997.

Research output: Contribution to journalArticle

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T1 - The field emission characteristics of a-C:H thin films prepared by helical resonator plasma enhanced chemical vapor deposition

AU - Rho, Soon Joon

AU - Shim, Jae Yeob

AU - Chi, Eung Joon

AU - Baik, Hong Koo

AU - Lee, Sung Man

PY - 1997/8/1

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N2 - The field emission characteristics of hydrogenated amorphous carbon (a-C:H) films prepared by helical resonator-plasma enhanced chemical vapor deposition (HR-PECVD) are examined. a-C:H films are deposited with CH4/H2 and CH4/Ar gases under different substrate RF bias conditions. The properties of a-C:H films are investigated by Raman spectroscopy, Fourier transform IR (FT-IR), UV spectroscopy and elastic recoil detection (ERD). Field emission characteristics of a-C:H coated on Si whiskers which are grown by the vapor-liquid-solid (VLS) method are tested under ultrahigh vacuum. Highly efficient field emission characteristics are achieved in the specimen deposited at a substrate RF bias higher rather than in the ground deposition condition regardless of the nature of the reactant gas. As the substrate RF bias is changed from ground to a higher RF substrate bias, the deposited a-C:H films have lower hydrogen contents and higher sp2-bonds. Therefore, the field emission characteristics of a-C:H thin films are affected by the hydrogen contents of the films rather than by the sp3/sp2 ratio.

AB - The field emission characteristics of hydrogenated amorphous carbon (a-C:H) films prepared by helical resonator-plasma enhanced chemical vapor deposition (HR-PECVD) are examined. a-C:H films are deposited with CH4/H2 and CH4/Ar gases under different substrate RF bias conditions. The properties of a-C:H films are investigated by Raman spectroscopy, Fourier transform IR (FT-IR), UV spectroscopy and elastic recoil detection (ERD). Field emission characteristics of a-C:H coated on Si whiskers which are grown by the vapor-liquid-solid (VLS) method are tested under ultrahigh vacuum. Highly efficient field emission characteristics are achieved in the specimen deposited at a substrate RF bias higher rather than in the ground deposition condition regardless of the nature of the reactant gas. As the substrate RF bias is changed from ground to a higher RF substrate bias, the deposited a-C:H films have lower hydrogen contents and higher sp2-bonds. Therefore, the field emission characteristics of a-C:H thin films are affected by the hydrogen contents of the films rather than by the sp3/sp2 ratio.

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