The field emission properties of silicon carbide whiskers grown by CVD

Dong Chan Lim, Hyung Suk Ahn, Doo Jin Choi, Chae Hyun Wang, Hajime Tomokage

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Silicon carbide whiskers and films were grown by chemical vapor deposition without a metallic catalyst in the temperature range between 1000 °C and 1150 °C, and at a constant pressure and input gas ratio[H2/MTS(Methyltrichlorosilane)] of 5 Torr and 30, respectively. The mean diameter of whiskers increased from 96 nm to 1.24 μm as the deposition temperature increased up to 1100 °C. Further increasing of the growth temperature made the growth mechanism transfer from whisker growth to film growth and the surface morphology adopted a pebble-like structure. Silicon carbide whiskers and films showed cold field emission properties and the whiskers, which were obtained, at a temperature of 1050 °C showed relatively good field emission properties.

Original languageEnglish
Pages (from-to)37-42
Number of pages6
JournalSurface and Coatings Technology
Volume168
Issue number1
DOIs
Publication statusPublished - 2003 May 1

Fingerprint

Silicon carbide
silicon carbides
Field emission
field emission
Chemical vapor deposition
vapor deposition
Growth temperature
Film growth
Temperature
Surface morphology
temperature
Gases
Catalysts
catalysts
silicon carbide
gases
methyltrichlorosilane

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Lim, Dong Chan ; Ahn, Hyung Suk ; Choi, Doo Jin ; Wang, Chae Hyun ; Tomokage, Hajime. / The field emission properties of silicon carbide whiskers grown by CVD. In: Surface and Coatings Technology. 2003 ; Vol. 168, No. 1. pp. 37-42.
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The field emission properties of silicon carbide whiskers grown by CVD. / Lim, Dong Chan; Ahn, Hyung Suk; Choi, Doo Jin; Wang, Chae Hyun; Tomokage, Hajime.

In: Surface and Coatings Technology, Vol. 168, No. 1, 01.05.2003, p. 37-42.

Research output: Contribution to journalArticle

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AU - Choi, Doo Jin

AU - Wang, Chae Hyun

AU - Tomokage, Hajime

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