The formation of a dielectric SiNxCy sealing layer using an atomic layer deposition technique

Doyoung Kim, Soo Hyun Kim, Hyungjun Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We investigated the growth of a SiNxCy dielectric sealing layer on a porous low dielectric constant (low-k) substrate using plasma-enhanced atomic layer deposition (PE-ALD). A porous low-k substrate was repeatedly exposed to bis(dimethylamino)dimethylsilane (BDMADMS) and a hydrogen plasma. A SiNxCy sealing layer grown by PE-ALD was formed without any penetration of the pores within the porous low dielectric substrate. Our technique provides for the deposition of a dielectric sealing layer that prevents pore penetration of a low-k material.

Original languageEnglish
Pages (from-to)139-142
Number of pages4
JournalMaterials Science in Semiconductor Processing
Volume29
DOIs
Publication statusPublished - 2015 Jan 1

Fingerprint

Atomic layer deposition
sealing
atomic layer epitaxy
Plasmas
Substrates
penetration
porosity
hydrogen plasma
Hydrogen
Permittivity
permittivity

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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abstract = "We investigated the growth of a SiNxCy dielectric sealing layer on a porous low dielectric constant (low-k) substrate using plasma-enhanced atomic layer deposition (PE-ALD). A porous low-k substrate was repeatedly exposed to bis(dimethylamino)dimethylsilane (BDMADMS) and a hydrogen plasma. A SiNxCy sealing layer grown by PE-ALD was formed without any penetration of the pores within the porous low dielectric substrate. Our technique provides for the deposition of a dielectric sealing layer that prevents pore penetration of a low-k material.",
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The formation of a dielectric SiNxCy sealing layer using an atomic layer deposition technique. / Kim, Doyoung; Kim, Soo Hyun; Kim, Hyungjun.

In: Materials Science in Semiconductor Processing, Vol. 29, 01.01.2015, p. 139-142.

Research output: Contribution to journalArticle

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AB - We investigated the growth of a SiNxCy dielectric sealing layer on a porous low dielectric constant (low-k) substrate using plasma-enhanced atomic layer deposition (PE-ALD). A porous low-k substrate was repeatedly exposed to bis(dimethylamino)dimethylsilane (BDMADMS) and a hydrogen plasma. A SiNxCy sealing layer grown by PE-ALD was formed without any penetration of the pores within the porous low dielectric substrate. Our technique provides for the deposition of a dielectric sealing layer that prevents pore penetration of a low-k material.

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