We investigated the growth of a SiNxCy dielectric sealing layer on a porous low dielectric constant (low-k) substrate using plasma-enhanced atomic layer deposition (PE-ALD). A porous low-k substrate was repeatedly exposed to bis(dimethylamino)dimethylsilane (BDMADMS) and a hydrogen plasma. A SiNxCy sealing layer grown by PE-ALD was formed without any penetration of the pores within the porous low dielectric substrate. Our technique provides for the deposition of a dielectric sealing layer that prevents pore penetration of a low-k material.
Bibliographical noteFunding Information:
This work was supported by the Industrial Strategic technology development program ( 10041926 , Development of high density plasma technologies for thin film deposition of nanoscale semiconductor and flexible display processing) funded by the Ministry of Knowledge Economy (MKE, Korea) and by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology ( NRF-2010–0024066 ).
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering