The formation of a dielectric SiNxCy sealing layer using an atomic layer deposition technique

Doyoung Kim, Soo Hyun Kim, Hyungjun Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)


We investigated the growth of a SiNxCy dielectric sealing layer on a porous low dielectric constant (low-k) substrate using plasma-enhanced atomic layer deposition (PE-ALD). A porous low-k substrate was repeatedly exposed to bis(dimethylamino)dimethylsilane (BDMADMS) and a hydrogen plasma. A SiNxCy sealing layer grown by PE-ALD was formed without any penetration of the pores within the porous low dielectric substrate. Our technique provides for the deposition of a dielectric sealing layer that prevents pore penetration of a low-k material.

Original languageEnglish
Pages (from-to)139-142
Number of pages4
JournalMaterials Science in Semiconductor Processing
Publication statusPublished - 2015 Jan

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'The formation of a dielectric SiN<sub>x</sub>C<sub>y</sub> sealing layer using an atomic layer deposition technique'. Together they form a unique fingerprint.

  • Cite this