The formation of InZnO lattices incorporating Ba for thin-film transistors using a solution process

Si Joon Kim, Lim Kim Dong, Seung Rim You, Hee Jeong Woong, Na Kim Doo, Hyun Yoon Doo, Hyun Jae Kim

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23 Citations (Scopus)


We introduce solution-processed BaInZnO (BIZO) thin-film transistors (TFTs) with different atomic percentages of Ba. The effects of incorporating Ba on the InZnO (IZO) lattice were investigated using the hysteresis behavior, thermogravimetry, differential thermal analysis, and X-ray diffraction patterns. As the atomic percentage of Ba was increased, the turn-on voltage shifted in a positive direction and the off-current decreased, to about 10-11 A. Excess Ba led to degradation of the subthreshold swing. The optimized electrical characteristics of BIZO TFTs were observed with Ba 10% and Ba can replace the Ga in the IZO lattice.

Original languageEnglish
Pages (from-to)163-165
Number of pages3
JournalJournal of Crystal Growth
Issue number1
Publication statusPublished - 2011 Jul 1


All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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