The formation of p-type ZnO films by using a diffusion process

M. C. Jeong, D. K. Hwang, J. M. Myoung, Y. D. Ko, M. S. Kim, I. Yun

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

ZnO films were deposited on InP and GaAs substrates by using radio frequency (rf) magnetron sputtering and the diffusion process was performed to control the electrical properties of ZnO films. By using ambient-controlled ampoule, phosphor from Zn3P2 and arsenic diffused to the ZnO films in the ampoule and acted as acceptors in the films. Hall measurement exhibited the doped ZnO films were p-type characteristic. Moreover, ZnO thin film homojuctions were formed to investigate the films' electrical properties. Based on these results, it is confirmed that ZnO film is the potential candidate for optical devices.

Original languageEnglish
Pages (from-to)17-22
Number of pages6
JournalDefect and Diffusion Forum
Volume218-220
DOIs
Publication statusPublished - 2003

All Science Journal Classification (ASJC) codes

  • Radiation
  • Materials Science(all)
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'The formation of p-type ZnO films by using a diffusion process'. Together they form a unique fingerprint.

  • Cite this