ZnO films were deposited on InP and GaAs substrates by using radio frequency (rf) magnetron sputtering and the diffusion process was performed to control the electrical properties of ZnO films. By using ambient-controlled ampoule, phosphor from Zn3P2 and arsenic diffused to the ZnO films in the ampoule and acted as acceptors in the films. Hall measurement exhibited the doped ZnO films were p-type characteristic. Moreover, ZnO thin film homojuctions were formed to investigate the films' electrical properties. Based on these results, it is confirmed that ZnO film is the potential candidate for optical devices.
|Number of pages||6|
|Journal||Defect and Diffusion Forum|
|Publication status||Published - 2003|
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics