The formation of p-type ZnO films by using a diffusion process

M. C. Jeong, D. K. Hwang, Jae Min Myoung, Y. D. Ko, M. S. Kim, Ilgu Yun

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

ZnO films were deposited on InP and GaAs substrates by using radio frequency (rf) magnetron sputtering and the diffusion process was performed to control the electrical properties of ZnO films. By using ambient-controlled ampoule, phosphor from Zn3P2 and arsenic diffused to the ZnO films in the ampoule and acted as acceptors in the films. Hall measurement exhibited the doped ZnO films were p-type characteristic. Moreover, ZnO thin film homojuctions were formed to investigate the films' electrical properties. Based on these results, it is confirmed that ZnO film is the potential candidate for optical devices.

Original languageEnglish
Pages (from-to)17-22
Number of pages6
JournalDefect and Diffusion Forum
Volume218-220
Publication statusPublished - 2003 Jan 1

Fingerprint

ampoules
Electric properties
electrical properties
Arsenic
Optical devices
arsenic
Phosphors
Magnetron sputtering
phosphors
radio frequencies
magnetron sputtering
Thin films
Substrates
thin films
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Radiation
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Jeong, M. C., Hwang, D. K., Myoung, J. M., Ko, Y. D., Kim, M. S., & Yun, I. (2003). The formation of p-type ZnO films by using a diffusion process. Defect and Diffusion Forum, 218-220, 17-22.
Jeong, M. C. ; Hwang, D. K. ; Myoung, Jae Min ; Ko, Y. D. ; Kim, M. S. ; Yun, Ilgu. / The formation of p-type ZnO films by using a diffusion process. In: Defect and Diffusion Forum. 2003 ; Vol. 218-220. pp. 17-22.
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Jeong, MC, Hwang, DK, Myoung, JM, Ko, YD, Kim, MS & Yun, I 2003, 'The formation of p-type ZnO films by using a diffusion process', Defect and Diffusion Forum, vol. 218-220, pp. 17-22.

The formation of p-type ZnO films by using a diffusion process. / Jeong, M. C.; Hwang, D. K.; Myoung, Jae Min; Ko, Y. D.; Kim, M. S.; Yun, Ilgu.

In: Defect and Diffusion Forum, Vol. 218-220, 01.01.2003, p. 17-22.

Research output: Contribution to journalArticle

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