The hydridation and nitridation of GeSi oxide annealed in ammonia

W. S. Liu, M. A. Nicolet, Hyung-Ho Park, B. H. Koak, J. W. Lee

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A 110-nm-thick Ge 0.38 Si 0.62 O 2 film on Ge 0.38 Si 0.62 was annealed in NH 3 at 700 °C for 4 h and analyzed by Auger electron spectroscopy, backscattering spectrometry, x-ray photoelectron spectroscopy, and secondary-ion mass spectrometry. In the surface region of the oxide film, this annealing results in an incorporation of nitrogen bonded to germanium by the nitridation of GeO 2 . In the bottom region of the oxide film near the GeSi/oxide interface, elemental Ge appears. We attribute this process to the hydridation of GeO 2 with hydrogen that comes from dissociated ammonia. Results obtained at 800 °C for a 380-nm-thick oxide film are similar. A model is proposed to explain the observed changes of the oxide after the ammonia annealing.

Original languageEnglish
Pages (from-to)2631-2634
Number of pages4
JournalJournal of Applied Physics
Volume78
Issue number4
DOIs
Publication statusPublished - 1995 Dec 1

Fingerprint

oxide films
ammonia
oxides
annealing
x ray spectroscopy
secondary ion mass spectrometry
Auger spectroscopy
electron spectroscopy
germanium
backscattering
photoelectron spectroscopy
nitrogen
hydrogen
spectroscopy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Liu, W. S. ; Nicolet, M. A. ; Park, Hyung-Ho ; Koak, B. H. ; Lee, J. W. / The hydridation and nitridation of GeSi oxide annealed in ammonia. In: Journal of Applied Physics. 1995 ; Vol. 78, No. 4. pp. 2631-2634.
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The hydridation and nitridation of GeSi oxide annealed in ammonia. / Liu, W. S.; Nicolet, M. A.; Park, Hyung-Ho; Koak, B. H.; Lee, J. W.

In: Journal of Applied Physics, Vol. 78, No. 4, 01.12.1995, p. 2631-2634.

Research output: Contribution to journalArticle

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T1 - The hydridation and nitridation of GeSi oxide annealed in ammonia

AU - Liu, W. S.

AU - Nicolet, M. A.

AU - Park, Hyung-Ho

AU - Koak, B. H.

AU - Lee, J. W.

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AB - A 110-nm-thick Ge 0.38 Si 0.62 O 2 film on Ge 0.38 Si 0.62 was annealed in NH 3 at 700 °C for 4 h and analyzed by Auger electron spectroscopy, backscattering spectrometry, x-ray photoelectron spectroscopy, and secondary-ion mass spectrometry. In the surface region of the oxide film, this annealing results in an incorporation of nitrogen bonded to germanium by the nitridation of GeO 2 . In the bottom region of the oxide film near the GeSi/oxide interface, elemental Ge appears. We attribute this process to the hydridation of GeO 2 with hydrogen that comes from dissociated ammonia. Results obtained at 800 °C for a 380-nm-thick oxide film are similar. A model is proposed to explain the observed changes of the oxide after the ammonia annealing.

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