The hydridation and nitridation of GeSi oxide annealed in ammonia

W. S. Liu; M. A. Nicolet; H. H. Park; B. H. Koak; J. W. Lee

doi:10.1063/1.360123

The hydridation and nitridation of GeSi oxide annealed in ammonia

W. S. Liu, M. A. Nicolet, H. H. Park, B. H. Koak, J. W. Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

A 110-nm-thick Ge_0.38Si_0.62O₂ film on Ge_0.38Si_0.62 was annealed in NH₃ at 700 °C for 4 h and analyzed by Auger electron spectroscopy, backscattering spectrometry, x-ray photoelectron spectroscopy, and secondary-ion mass spectrometry. In the surface region of the oxide film, this annealing results in an incorporation of nitrogen bonded to germanium by the nitridation of GeO ₂. In the bottom region of the oxide film near the GeSi/oxide interface, elemental Ge appears. We attribute this process to the hydridation of GeO₂ with hydrogen that comes from dissociated ammonia. Results obtained at 800 °C for a 380-nm-thick oxide film are similar. A model is proposed to explain the observed changes of the oxide after the ammonia annealing.

Original language	English
Pages (from-to)	2631-2634
Number of pages	4
Journal	Journal of Applied Physics
Volume	78
Issue number	4
DOIs	https://doi.org/10.1063/1.360123
Publication status	Published - 1995

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

Access to Document

10.1063/1.360123

Cite this

@article{fe6780c97eea467da6547ac0e167acac,

title = "The hydridation and nitridation of GeSi oxide annealed in ammonia",

abstract = "A 110-nm-thick Ge0.38Si0.62O2 film on Ge0.38Si0.62 was annealed in NH3 at 700 °C for 4 h and analyzed by Auger electron spectroscopy, backscattering spectrometry, x-ray photoelectron spectroscopy, and secondary-ion mass spectrometry. In the surface region of the oxide film, this annealing results in an incorporation of nitrogen bonded to germanium by the nitridation of GeO 2. In the bottom region of the oxide film near the GeSi/oxide interface, elemental Ge appears. We attribute this process to the hydridation of GeO2 with hydrogen that comes from dissociated ammonia. Results obtained at 800 °C for a 380-nm-thick oxide film are similar. A model is proposed to explain the observed changes of the oxide after the ammonia annealing.",

author = "Liu, {W. S.} and Nicolet, {M. A.} and Park, {H. H.} and Koak, {B. H.} and Lee, {J. W.}",

year = "1995",

doi = "10.1063/1.360123",

language = "English",

volume = "78",

pages = "2631--2634",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "4",

}

TY - JOUR

T1 - The hydridation and nitridation of GeSi oxide annealed in ammonia

AU - Liu, W. S.

AU - Nicolet, M. A.

AU - Park, H. H.

AU - Koak, B. H.

AU - Lee, J. W.

PY - 1995

Y1 - 1995

N2 - A 110-nm-thick Ge0.38Si0.62O2 film on Ge0.38Si0.62 was annealed in NH3 at 700 °C for 4 h and analyzed by Auger electron spectroscopy, backscattering spectrometry, x-ray photoelectron spectroscopy, and secondary-ion mass spectrometry. In the surface region of the oxide film, this annealing results in an incorporation of nitrogen bonded to germanium by the nitridation of GeO 2. In the bottom region of the oxide film near the GeSi/oxide interface, elemental Ge appears. We attribute this process to the hydridation of GeO2 with hydrogen that comes from dissociated ammonia. Results obtained at 800 °C for a 380-nm-thick oxide film are similar. A model is proposed to explain the observed changes of the oxide after the ammonia annealing.

AB - A 110-nm-thick Ge0.38Si0.62O2 film on Ge0.38Si0.62 was annealed in NH3 at 700 °C for 4 h and analyzed by Auger electron spectroscopy, backscattering spectrometry, x-ray photoelectron spectroscopy, and secondary-ion mass spectrometry. In the surface region of the oxide film, this annealing results in an incorporation of nitrogen bonded to germanium by the nitridation of GeO 2. In the bottom region of the oxide film near the GeSi/oxide interface, elemental Ge appears. We attribute this process to the hydridation of GeO2 with hydrogen that comes from dissociated ammonia. Results obtained at 800 °C for a 380-nm-thick oxide film are similar. A model is proposed to explain the observed changes of the oxide after the ammonia annealing.

UR - http://www.scopus.com/inward/record.url?scp=3142634086&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3142634086&partnerID=8YFLogxK

U2 - 10.1063/1.360123

DO - 10.1063/1.360123

M3 - Article

AN - SCOPUS:3142634086

SN - 0021-8979

VL - 78

SP - 2631

EP - 2634

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

ER -

The hydridation and nitridation of GeSi oxide annealed in ammonia

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this