The Impact of an Ultrathin Y2O3 Layer on GeO2 Passivation in Ge MOS Gate Stacks

Yujin Seo, Tae In Lee, Chang Mo Yoon, Bo Eun Park, Wan Sik Hwang, Hyungjun Kim, Hyun Yong Yu, Byung Jin Cho

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

This paper investigates the impact of an atomic layer-deposited Y2O3 dielectric on the passivation of a GeO2 layer in GeO2-based Ge gate stacks. The equivalent oxide thickness scalability and thermal stability of the ultrathin Y2O3 layer are evaluated at different Y2O3 thicknesses and annealing conditions in detail. Experimental results show that a Y2O3 layer thickness of 1.0 nm is required to serve as a GeO2 passivation layer while retaining gate-stack performance at 400 °C postdeposition annealing. However, at a higher annealing temperature of 500 °C, the barrier property deteriorates and allows GeO desorption. The proposed gate-stack implies the applicability of a Y2O3 passivation method for further scaled GeO2-based Ge gate stacks.

Original languageEnglish
Article number7970127
Pages (from-to)3303-3307
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume64
Issue number8
DOIs
Publication statusPublished - 2017 Aug 1

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Passivation
Annealing
Scalability
Desorption
Thermodynamic stability
Oxides
germanium oxide
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Seo, Y., Lee, T. I., Yoon, C. M., Park, B. E., Hwang, W. S., Kim, H., ... Cho, B. J. (2017). The Impact of an Ultrathin Y2O3 Layer on GeO2 Passivation in Ge MOS Gate Stacks. IEEE Transactions on Electron Devices, 64(8), 3303-3307. [7970127]. https://doi.org/10.1109/TED.2017.2710182
Seo, Yujin ; Lee, Tae In ; Yoon, Chang Mo ; Park, Bo Eun ; Hwang, Wan Sik ; Kim, Hyungjun ; Yu, Hyun Yong ; Cho, Byung Jin. / The Impact of an Ultrathin Y2O3 Layer on GeO2 Passivation in Ge MOS Gate Stacks. In: IEEE Transactions on Electron Devices. 2017 ; Vol. 64, No. 8. pp. 3303-3307.
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abstract = "This paper investigates the impact of an atomic layer-deposited Y2O3 dielectric on the passivation of a GeO2 layer in GeO2-based Ge gate stacks. The equivalent oxide thickness scalability and thermal stability of the ultrathin Y2O3 layer are evaluated at different Y2O3 thicknesses and annealing conditions in detail. Experimental results show that a Y2O3 layer thickness of 1.0 nm is required to serve as a GeO2 passivation layer while retaining gate-stack performance at 400 °C postdeposition annealing. However, at a higher annealing temperature of 500 °C, the barrier property deteriorates and allows GeO desorption. The proposed gate-stack implies the applicability of a Y2O3 passivation method for further scaled GeO2-based Ge gate stacks.",
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Seo, Y, Lee, TI, Yoon, CM, Park, BE, Hwang, WS, Kim, H, Yu, HY & Cho, BJ 2017, 'The Impact of an Ultrathin Y2O3 Layer on GeO2 Passivation in Ge MOS Gate Stacks', IEEE Transactions on Electron Devices, vol. 64, no. 8, 7970127, pp. 3303-3307. https://doi.org/10.1109/TED.2017.2710182

The Impact of an Ultrathin Y2O3 Layer on GeO2 Passivation in Ge MOS Gate Stacks. / Seo, Yujin; Lee, Tae In; Yoon, Chang Mo; Park, Bo Eun; Hwang, Wan Sik; Kim, Hyungjun; Yu, Hyun Yong; Cho, Byung Jin.

In: IEEE Transactions on Electron Devices, Vol. 64, No. 8, 7970127, 01.08.2017, p. 3303-3307.

Research output: Contribution to journalArticle

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