The impact of atomic layer deposited SiO2 passivation for high-k Ta1-xZrxO on the InP substrate

Chandreswar Mahata, Il Kwon Oh, Chang Mo Yoon, Chang Wan Lee, Jungmok Seo, Hassan Algadi, Mi Hyang Sheen, Young Woon Kim, Hyungjun Kim, Taeyoon Lee

Research output: Contribution to journalArticle

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Abstract

Metal-oxide-semiconductor (MOS) capacitors with an amorphous Ta1-xZrxO composite gate dielectric film and a SiO2 passivation layer were fabricated on an indium phosphide (InP) substrate. To investigate the impact of the passivation layer, the interfacial chemical, physical and electrical properties of the Ta1-xZrxO/InP and Ta1-xZrxO/SiO2/InP MOS structures were studied in detail. Electrical conductivity measurements combined with chemical bonding analysis using X-ray photoelectron spectroscopy (XPS) and electron dispersive spectroscopy (EDS) were conducted in order to evaluate the suitability of a Ta1-xZrxO alloy as a gate dielectric film for an InP substrate. XPS results showed that the Ta1-xZrxO film retained its insulating characteristics and was thermally stable even after annealing at 500 °C. However, Fermi-level pinning and significant diffusion of indium through the Ta1-xZrxO were observed. The diffusion of In was remarkably reduced after introducing the SiO2 passivation layer, which resulted in an overall reduction in interfacial layer thickness. Parallel conductance contour measurements showed that the SiO2 passivation layer resulted in unpinning of the Fermi-level. The introduction of a SiO2 passivation layer with the Ta1-xZrxO composite gate dielectric film was found to provide remarkably improved dielectric performance, which was mainly attributed to reduced In diffusion and the passivation of interfacial and bulk dielectric defects.

Original languageEnglish
Pages (from-to)10293-10301
Number of pages9
JournalJournal of Materials Chemistry C
Volume3
Issue number39
DOIs
Publication statusPublished - 2015 Sep 6

Fingerprint

Indium phosphide
Passivation
Dielectric films
Gate dielectrics
Substrates
Fermi level
Contour measurement
X ray photoelectron spectroscopy
Metals
Indium
Composite materials
Chemical properties
indium phosphide
Electric properties
Capacitors
Physical properties
Spectroscopy
Annealing
Defects
Electrons

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

Cite this

Mahata, Chandreswar ; Oh, Il Kwon ; Yoon, Chang Mo ; Lee, Chang Wan ; Seo, Jungmok ; Algadi, Hassan ; Sheen, Mi Hyang ; Kim, Young Woon ; Kim, Hyungjun ; Lee, Taeyoon. / The impact of atomic layer deposited SiO2 passivation for high-k Ta1-xZrxO on the InP substrate. In: Journal of Materials Chemistry C. 2015 ; Vol. 3, No. 39. pp. 10293-10301.
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abstract = "Metal-oxide-semiconductor (MOS) capacitors with an amorphous Ta1-xZrxO composite gate dielectric film and a SiO2 passivation layer were fabricated on an indium phosphide (InP) substrate. To investigate the impact of the passivation layer, the interfacial chemical, physical and electrical properties of the Ta1-xZrxO/InP and Ta1-xZrxO/SiO2/InP MOS structures were studied in detail. Electrical conductivity measurements combined with chemical bonding analysis using X-ray photoelectron spectroscopy (XPS) and electron dispersive spectroscopy (EDS) were conducted in order to evaluate the suitability of a Ta1-xZrxO alloy as a gate dielectric film for an InP substrate. XPS results showed that the Ta1-xZrxO film retained its insulating characteristics and was thermally stable even after annealing at 500 °C. However, Fermi-level pinning and significant diffusion of indium through the Ta1-xZrxO were observed. The diffusion of In was remarkably reduced after introducing the SiO2 passivation layer, which resulted in an overall reduction in interfacial layer thickness. Parallel conductance contour measurements showed that the SiO2 passivation layer resulted in unpinning of the Fermi-level. The introduction of a SiO2 passivation layer with the Ta1-xZrxO composite gate dielectric film was found to provide remarkably improved dielectric performance, which was mainly attributed to reduced In diffusion and the passivation of interfacial and bulk dielectric defects.",
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The impact of atomic layer deposited SiO2 passivation for high-k Ta1-xZrxO on the InP substrate. / Mahata, Chandreswar; Oh, Il Kwon; Yoon, Chang Mo; Lee, Chang Wan; Seo, Jungmok; Algadi, Hassan; Sheen, Mi Hyang; Kim, Young Woon; Kim, Hyungjun; Lee, Taeyoon.

In: Journal of Materials Chemistry C, Vol. 3, No. 39, 06.09.2015, p. 10293-10301.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The impact of atomic layer deposited SiO2 passivation for high-k Ta1-xZrxO on the InP substrate

AU - Mahata, Chandreswar

AU - Oh, Il Kwon

AU - Yoon, Chang Mo

AU - Lee, Chang Wan

AU - Seo, Jungmok

AU - Algadi, Hassan

AU - Sheen, Mi Hyang

AU - Kim, Young Woon

AU - Kim, Hyungjun

AU - Lee, Taeyoon

PY - 2015/9/6

Y1 - 2015/9/6

N2 - Metal-oxide-semiconductor (MOS) capacitors with an amorphous Ta1-xZrxO composite gate dielectric film and a SiO2 passivation layer were fabricated on an indium phosphide (InP) substrate. To investigate the impact of the passivation layer, the interfacial chemical, physical and electrical properties of the Ta1-xZrxO/InP and Ta1-xZrxO/SiO2/InP MOS structures were studied in detail. Electrical conductivity measurements combined with chemical bonding analysis using X-ray photoelectron spectroscopy (XPS) and electron dispersive spectroscopy (EDS) were conducted in order to evaluate the suitability of a Ta1-xZrxO alloy as a gate dielectric film for an InP substrate. XPS results showed that the Ta1-xZrxO film retained its insulating characteristics and was thermally stable even after annealing at 500 °C. However, Fermi-level pinning and significant diffusion of indium through the Ta1-xZrxO were observed. The diffusion of In was remarkably reduced after introducing the SiO2 passivation layer, which resulted in an overall reduction in interfacial layer thickness. Parallel conductance contour measurements showed that the SiO2 passivation layer resulted in unpinning of the Fermi-level. The introduction of a SiO2 passivation layer with the Ta1-xZrxO composite gate dielectric film was found to provide remarkably improved dielectric performance, which was mainly attributed to reduced In diffusion and the passivation of interfacial and bulk dielectric defects.

AB - Metal-oxide-semiconductor (MOS) capacitors with an amorphous Ta1-xZrxO composite gate dielectric film and a SiO2 passivation layer were fabricated on an indium phosphide (InP) substrate. To investigate the impact of the passivation layer, the interfacial chemical, physical and electrical properties of the Ta1-xZrxO/InP and Ta1-xZrxO/SiO2/InP MOS structures were studied in detail. Electrical conductivity measurements combined with chemical bonding analysis using X-ray photoelectron spectroscopy (XPS) and electron dispersive spectroscopy (EDS) were conducted in order to evaluate the suitability of a Ta1-xZrxO alloy as a gate dielectric film for an InP substrate. XPS results showed that the Ta1-xZrxO film retained its insulating characteristics and was thermally stable even after annealing at 500 °C. However, Fermi-level pinning and significant diffusion of indium through the Ta1-xZrxO were observed. The diffusion of In was remarkably reduced after introducing the SiO2 passivation layer, which resulted in an overall reduction in interfacial layer thickness. Parallel conductance contour measurements showed that the SiO2 passivation layer resulted in unpinning of the Fermi-level. The introduction of a SiO2 passivation layer with the Ta1-xZrxO composite gate dielectric film was found to provide remarkably improved dielectric performance, which was mainly attributed to reduced In diffusion and the passivation of interfacial and bulk dielectric defects.

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