@inproceedings{69e9e4b5fdb342479faaceabd7c2c348,
title = "The impact of dislocation on bulk-Si FinFET technologies: Physical modeling of strain relaxation and enhancement by dislocation",
abstract = "The optimal position of dislocation stress memorization technique (DSMT) to maximize n-FinFET performance as well as the stacking fault (SF) number, [Ge] concentration limit and p-FinFET DC tradeoff in eSiGe are newly investigated by using the scanning moir{\'e} fringe (SMF) and scanning transmission electron microscopy-geometrical phase analysis (STEM-GPA) validated in-house 3D TCAD model in various bulk finFET structures.",
author = "Min, {Jeong Guk} and Changwook Jeong and Uihui Kwon and Kim, {Dae Sin} and Suhyun Kim and Ilryoung Kim and Yang, {Joon Sung}",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.; 13th IEEE Nanotechnology Materials and Devices Conference, NMDC 2018 ; Conference date: 14-10-2018 Through 17-10-2018",
year = "2019",
month = jan,
day = "8",
doi = "10.1109/NMDC.2018.8605736",
language = "English",
series = "2018 IEEE 13th Nanotechnology Materials and Devices Conference, NMDC 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2018 IEEE 13th Nanotechnology Materials and Devices Conference, NMDC 2018",
address = "United States",
}