This study examined the effect of gate dielectric materials on the light-induced bias instability of Hf-In-Zn-O (HIZO) transistor. The HfO x and SiNx gated devices suffered from a huge negative threshold voltage (Vth) shift (>11 V) during the application of negative-bias-thermal illumination stress for 3 h. In contrast, the HIZO transistor exhibited much better stability (<2.0 V) in terms of Vth movement under identical stress conditions. Based on the experimental results, we propose a plausible degradation model for the trapping of the photocreated hole carrier either at the channel/gate dielectric or dielectric bulk layer.
Bibliographical noteFunding Information:
J.K.J. acknowledges the support of an Inha University Research Grant (Grant No. INHA-40877).
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)