The impact of gate dielectric materials on the light-induced bias instability in Hf-In-Zn-O thin film transistor

Jang Yeon Kwon, Ji Sim Jung, Kyoung Seok Son, Kwang Hee Lee, Joon Seok Park, Tae Sang Kim, Jin Seong Park, Rino Choi, Jae Kyeong Jeong, Bonwon Koo, Sang Yoon Lee

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Abstract

This study examined the effect of gate dielectric materials on the light-induced bias instability of Hf-In-Zn-O (HIZO) transistor. The HfO x and SiNx gated devices suffered from a huge negative threshold voltage (Vth) shift (>11 V) during the application of negative-bias-thermal illumination stress for 3 h. In contrast, the HIZO transistor exhibited much better stability (<2.0 V) in terms of Vth movement under identical stress conditions. Based on the experimental results, we propose a plausible degradation model for the trapping of the photocreated hole carrier either at the channel/gate dielectric or dielectric bulk layer.

Original languageEnglish
Article number183503
JournalApplied Physics Letters
Volume97
Issue number18
DOIs
Publication statusPublished - 2010 Nov 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Kwon, J. Y., Jung, J. S., Son, K. S., Lee, K. H., Park, J. S., Kim, T. S., Park, J. S., Choi, R., Jeong, J. K., Koo, B., & Lee, S. Y. (2010). The impact of gate dielectric materials on the light-induced bias instability in Hf-In-Zn-O thin film transistor. Applied Physics Letters, 97(18), [183503]. https://doi.org/10.1063/1.3513400