The impact of gate dielectric materials on the light-induced bias instability in Hf-In-Zn-O thin film transistor

Jang Yeon Kwon; Ji Sim Jung; Kyoung Seok Son; Kwang Hee Lee; Joon Seok Park; Tae Sang Kim; Jin Seong Park; Rino Choi; Jae Kyeong Jeong; Bonwon Koo; Sang Yoon Lee

doi:10.1063/1.3513400

The impact of gate dielectric materials on the light-induced bias instability in Hf-In-Zn-O thin film transistor

Jang Yeon Kwon, Ji Sim Jung, Kyoung Seok Son, Kwang Hee Lee, Joon Seok Park, Tae Sang Kim, Jin Seong Park, Rino Choi, Jae Kyeong Jeong, Bonwon Koo, Sang Yoon Lee

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

111 Citations (Scopus)

Abstract

This study examined the effect of gate dielectric materials on the light-induced bias instability of Hf-In-Zn-O (HIZO) transistor. The HfO _x and SiN_x gated devices suffered from a huge negative threshold voltage (V_th) shift (>11 V) during the application of negative-bias-thermal illumination stress for 3 h. In contrast, the HIZO transistor exhibited much better stability (<2.0 V) in terms of Vth movement under identical stress conditions. Based on the experimental results, we propose a plausible degradation model for the trapping of the photocreated hole carrier either at the channel/gate dielectric or dielectric bulk layer.

Original language	English
Article number	183503
Journal	Applied Physics Letters
Volume	97
Issue number	18
DOIs	https://doi.org/10.1063/1.3513400
Publication status	Published - 2010 Nov 1

Bibliographical note

Funding Information:
J.K.J. acknowledges the support of an Inha University Research Grant (Grant No. INHA-40877).

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3513400

Cite this

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title = "The impact of gate dielectric materials on the light-induced bias instability in Hf-In-Zn-O thin film transistor",

abstract = "This study examined the effect of gate dielectric materials on the light-induced bias instability of Hf-In-Zn-O (HIZO) transistor. The HfO x and SiNx gated devices suffered from a huge negative threshold voltage (Vth) shift (>11 V) during the application of negative-bias-thermal illumination stress for 3 h. In contrast, the HIZO transistor exhibited much better stability (<2.0 V) in terms of Vth movement under identical stress conditions. Based on the experimental results, we propose a plausible degradation model for the trapping of the photocreated hole carrier either at the channel/gate dielectric or dielectric bulk layer.",

author = "Kwon, {Jang Yeon} and Jung, {Ji Sim} and Son, {Kyoung Seok} and Lee, {Kwang Hee} and Park, {Joon Seok} and Kim, {Tae Sang} and Park, {Jin Seong} and Rino Choi and Jeong, {Jae Kyeong} and Bonwon Koo and Lee, {Sang Yoon}",

note = "Funding Information: J.K.J. acknowledges the support of an Inha University Research Grant (Grant No. INHA-40877). ",

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doi = "10.1063/1.3513400",

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T1 - The impact of gate dielectric materials on the light-induced bias instability in Hf-In-Zn-O thin film transistor

AU - Kwon, Jang Yeon

AU - Jung, Ji Sim

AU - Son, Kyoung Seok

AU - Lee, Kwang Hee

AU - Park, Joon Seok

AU - Kim, Tae Sang

AU - Park, Jin Seong

AU - Choi, Rino

AU - Jeong, Jae Kyeong

AU - Koo, Bonwon

AU - Lee, Sang Yoon

N1 - Funding Information: J.K.J. acknowledges the support of an Inha University Research Grant (Grant No. INHA-40877).

PY - 2010/11/1

Y1 - 2010/11/1

N2 - This study examined the effect of gate dielectric materials on the light-induced bias instability of Hf-In-Zn-O (HIZO) transistor. The HfO x and SiNx gated devices suffered from a huge negative threshold voltage (Vth) shift (>11 V) during the application of negative-bias-thermal illumination stress for 3 h. In contrast, the HIZO transistor exhibited much better stability (<2.0 V) in terms of Vth movement under identical stress conditions. Based on the experimental results, we propose a plausible degradation model for the trapping of the photocreated hole carrier either at the channel/gate dielectric or dielectric bulk layer.

AB - This study examined the effect of gate dielectric materials on the light-induced bias instability of Hf-In-Zn-O (HIZO) transistor. The HfO x and SiNx gated devices suffered from a huge negative threshold voltage (Vth) shift (>11 V) during the application of negative-bias-thermal illumination stress for 3 h. In contrast, the HIZO transistor exhibited much better stability (<2.0 V) in terms of Vth movement under identical stress conditions. Based on the experimental results, we propose a plausible degradation model for the trapping of the photocreated hole carrier either at the channel/gate dielectric or dielectric bulk layer.

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The impact of gate dielectric materials on the light-induced bias instability in Hf-In-Zn-O thin film transistor

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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