The impact of gate dielectric materials on the light-induced bias instability in Hf-In-Zn-O thin film transistor

Jang Yeon Kwon, Ji Sim Jung, Kyoung Seok Son, Kwang Hee Lee, Joon Seok Park, Tae Sang Kim, Jin Seong Park, Rino Choi, Jae Kyeong Jeong, Bonwon Koo, Sang Yoon Lee

Research output: Contribution to journalArticle

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Abstract

This study examined the effect of gate dielectric materials on the light-induced bias instability of Hf-In-Zn-O (HIZO) transistor. The HfO x and SiNx gated devices suffered from a huge negative threshold voltage (Vth) shift (>11 V) during the application of negative-bias-thermal illumination stress for 3 h. In contrast, the HIZO transistor exhibited much better stability (<2.0 V) in terms of Vth movement under identical stress conditions. Based on the experimental results, we propose a plausible degradation model for the trapping of the photocreated hole carrier either at the channel/gate dielectric or dielectric bulk layer.

Original languageEnglish
Article number183503
JournalApplied Physics Letters
Volume97
Issue number18
DOIs
Publication statusPublished - 2010 Nov 1

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transistors
thin films
threshold voltage
illumination
trapping
degradation
shift

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Kwon, Jang Yeon ; Jung, Ji Sim ; Son, Kyoung Seok ; Lee, Kwang Hee ; Park, Joon Seok ; Kim, Tae Sang ; Park, Jin Seong ; Choi, Rino ; Jeong, Jae Kyeong ; Koo, Bonwon ; Lee, Sang Yoon. / The impact of gate dielectric materials on the light-induced bias instability in Hf-In-Zn-O thin film transistor. In: Applied Physics Letters. 2010 ; Vol. 97, No. 18.
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abstract = "This study examined the effect of gate dielectric materials on the light-induced bias instability of Hf-In-Zn-O (HIZO) transistor. The HfO x and SiNx gated devices suffered from a huge negative threshold voltage (Vth) shift (>11 V) during the application of negative-bias-thermal illumination stress for 3 h. In contrast, the HIZO transistor exhibited much better stability (<2.0 V) in terms of Vth movement under identical stress conditions. Based on the experimental results, we propose a plausible degradation model for the trapping of the photocreated hole carrier either at the channel/gate dielectric or dielectric bulk layer.",
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Kwon, JY, Jung, JS, Son, KS, Lee, KH, Park, JS, Kim, TS, Park, JS, Choi, R, Jeong, JK, Koo, B & Lee, SY 2010, 'The impact of gate dielectric materials on the light-induced bias instability in Hf-In-Zn-O thin film transistor', Applied Physics Letters, vol. 97, no. 18, 183503. https://doi.org/10.1063/1.3513400

The impact of gate dielectric materials on the light-induced bias instability in Hf-In-Zn-O thin film transistor. / Kwon, Jang Yeon; Jung, Ji Sim; Son, Kyoung Seok; Lee, Kwang Hee; Park, Joon Seok; Kim, Tae Sang; Park, Jin Seong; Choi, Rino; Jeong, Jae Kyeong; Koo, Bonwon; Lee, Sang Yoon.

In: Applied Physics Letters, Vol. 97, No. 18, 183503, 01.11.2010.

Research output: Contribution to journalArticle

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AU - Kwon, Jang Yeon

AU - Jung, Ji Sim

AU - Son, Kyoung Seok

AU - Lee, Kwang Hee

AU - Park, Joon Seok

AU - Kim, Tae Sang

AU - Park, Jin Seong

AU - Choi, Rino

AU - Jeong, Jae Kyeong

AU - Koo, Bonwon

AU - Lee, Sang Yoon

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