The impact of gate to drain spacing on hot-carrier degradation in sub-100 nm Ni-Pt salicidation FinFETs

Seung Min Lee, Hi Deok Lee, Injo Ok, Jungwoo Oh

Research output: Contribution to journalArticle

Abstract

The impact of gate-to-drain (GtD) spacing on hot carrier reliability in sub-100 nm Ni-Pt self-aligned silicided FinFETs has been analyzed experimentally. FinFETs with long GtD spaces exhibit severe drain current degradation (ΔIDS/IDS), but variations in threshold voltage (ΔVTH/VTH) and subthreshold swing (ΔSS/SS) are nearly the same as with short GtD spaces. When gate length (LG) is downscaled from 1 μm to 40 nm, the degradation between long and short GtD spaces increases from 0.4% to 6.5%. The amount of injected hot electrons into salicide-induced defects in the silicon region accounts for the dominant portion of the difference in the current degradation between short and long GtD spaces. The dependence of hot carrier immunity on GtD spacing has been analyzed by both qualitative and quantitative methods.

Original languageEnglish
Pages (from-to)167-170
Number of pages4
JournalSolid-State Electronics
Volume114
DOIs
Publication statusPublished - 2015 Dec 1

Fingerprint

Hot carriers
spacing
degradation
Degradation
Hot electrons
Drain current
Silicon
Threshold voltage
Defects
immunity
FinFET
hot electrons
threshold voltage
defects
silicon

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

@article{4aea611799b2431cba6c70771989391d,
title = "The impact of gate to drain spacing on hot-carrier degradation in sub-100 nm Ni-Pt salicidation FinFETs",
abstract = "The impact of gate-to-drain (GtD) spacing on hot carrier reliability in sub-100 nm Ni-Pt self-aligned silicided FinFETs has been analyzed experimentally. FinFETs with long GtD spaces exhibit severe drain current degradation (ΔIDS/IDS), but variations in threshold voltage (ΔVTH/VTH) and subthreshold swing (ΔSS/SS) are nearly the same as with short GtD spaces. When gate length (LG) is downscaled from 1 μm to 40 nm, the degradation between long and short GtD spaces increases from 0.4{\%} to 6.5{\%}. The amount of injected hot electrons into salicide-induced defects in the silicon region accounts for the dominant portion of the difference in the current degradation between short and long GtD spaces. The dependence of hot carrier immunity on GtD spacing has been analyzed by both qualitative and quantitative methods.",
author = "Lee, {Seung Min} and Lee, {Hi Deok} and Injo Ok and Jungwoo Oh",
year = "2015",
month = "12",
day = "1",
doi = "10.1016/j.sse.2015.09.018",
language = "English",
volume = "114",
pages = "167--170",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",

}

The impact of gate to drain spacing on hot-carrier degradation in sub-100 nm Ni-Pt salicidation FinFETs. / Lee, Seung Min; Lee, Hi Deok; Ok, Injo; Oh, Jungwoo.

In: Solid-State Electronics, Vol. 114, 01.12.2015, p. 167-170.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The impact of gate to drain spacing on hot-carrier degradation in sub-100 nm Ni-Pt salicidation FinFETs

AU - Lee, Seung Min

AU - Lee, Hi Deok

AU - Ok, Injo

AU - Oh, Jungwoo

PY - 2015/12/1

Y1 - 2015/12/1

N2 - The impact of gate-to-drain (GtD) spacing on hot carrier reliability in sub-100 nm Ni-Pt self-aligned silicided FinFETs has been analyzed experimentally. FinFETs with long GtD spaces exhibit severe drain current degradation (ΔIDS/IDS), but variations in threshold voltage (ΔVTH/VTH) and subthreshold swing (ΔSS/SS) are nearly the same as with short GtD spaces. When gate length (LG) is downscaled from 1 μm to 40 nm, the degradation between long and short GtD spaces increases from 0.4% to 6.5%. The amount of injected hot electrons into salicide-induced defects in the silicon region accounts for the dominant portion of the difference in the current degradation between short and long GtD spaces. The dependence of hot carrier immunity on GtD spacing has been analyzed by both qualitative and quantitative methods.

AB - The impact of gate-to-drain (GtD) spacing on hot carrier reliability in sub-100 nm Ni-Pt self-aligned silicided FinFETs has been analyzed experimentally. FinFETs with long GtD spaces exhibit severe drain current degradation (ΔIDS/IDS), but variations in threshold voltage (ΔVTH/VTH) and subthreshold swing (ΔSS/SS) are nearly the same as with short GtD spaces. When gate length (LG) is downscaled from 1 μm to 40 nm, the degradation between long and short GtD spaces increases from 0.4% to 6.5%. The amount of injected hot electrons into salicide-induced defects in the silicon region accounts for the dominant portion of the difference in the current degradation between short and long GtD spaces. The dependence of hot carrier immunity on GtD spacing has been analyzed by both qualitative and quantitative methods.

UR - http://www.scopus.com/inward/record.url?scp=84943642879&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84943642879&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2015.09.018

DO - 10.1016/j.sse.2015.09.018

M3 - Article

VL - 114

SP - 167

EP - 170

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

ER -