The impact of SiNx gate insulators on amorphous indium-gallium-zinc oxide thin film transistors under bias-temperature- illumination stress

Ji Sim Jung, Kyoung Seok Son, Kwang Hee Lee, Joon Seok Park, Tae Sang Kim, Jang Yeon Kwon, Kwun Bum Chung, Jin Seong Park, Bonwon Koo, Sangyun Lee

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Abstract

The threshold voltage instability (Vth) in indium-gallium-zinc oxide thin film transistor was investigated with disparate SiNx gate insulators under bias-temperature-illumination stress. As SiNx film stress became more tensile, the negative shift in Vth decreased significantly from -14.34 to -6.37 V. The compressive films exhibit a nitrogen-rich phase, higher hydrogen contents, and higher N-H bonds than tensile films. This suggests that the higher N-H related traps may play a dominant role in the degradation of the devices, which may provide and/or generate charge trapping sites in interfaces and/or SiNx insulators. It is anticipated that the appropriate optimization of gate insulator properties will help to improve device reliability.

Original languageEnglish
Article number193506
JournalApplied Physics Letters
Volume96
Issue number19
DOIs
Publication statusPublished - 2010 Jun 7

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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