The impact of SiNx gate insulators on amorphous indium-gallium-zinc oxide thin film transistors under bias-temperature- illumination stress

Ji Sim Jung, Kyoung Seok Son, Kwang Hee Lee, Joon Seok Park, Tae Sang Kim, Jang Yeon Kwon, Kwun Bum Chung, Jin Seong Park, Bonwon Koo, Sangyun Lee

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The threshold voltage instability (Vth) in indium-gallium-zinc oxide thin film transistor was investigated with disparate SiNx gate insulators under bias-temperature-illumination stress. As SiNx film stress became more tensile, the negative shift in Vth decreased significantly from -14.34 to -6.37 V. The compressive films exhibit a nitrogen-rich phase, higher hydrogen contents, and higher N-H bonds than tensile films. This suggests that the higher N-H related traps may play a dominant role in the degradation of the devices, which may provide and/or generate charge trapping sites in interfaces and/or SiNx insulators. It is anticipated that the appropriate optimization of gate insulator properties will help to improve device reliability.

Original languageEnglish
Article number193506
JournalApplied Physics Letters
Issue number19
Publication statusPublished - 2010 Jun 7


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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