Due to the rapid decrease in physical dimension of today's devices, lower resistive metal and/or lower dielectric constant material have to be applied. Recently, ordered mesoporous silica film has been drawn an attention for low-k application due to its ordered pore structure. However, it has been more required that low-k dielectrics should have low leakage current, high breakdown strength and high mechanical stabilities. In this study, ordered mesoporous silica films were prepared by sol-gel process using tetraethylorthosilane and methyltriethoxysilane as a mixed silica precursor in order to increase the mechanical and dielectric properties. It was found that the properties of the films were improved when the pore ordering and the amount of the incorporated methyl ligand were maximized.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Process Chemistry and Technology
- Surfaces, Coatings and Films
- Materials Chemistry