TY - GEN
T1 - The influence of electrode on sensitivity of pH sensors fabricated on AlGaN/GaN Heterostructures
AU - Lee, Chang Taek
AU - Jung, Sang Min
AU - Shin, Moo Whan
N1 - Publisher Copyright:
Copyright 2015 by TechConnect. All rights reserved.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2015
Y1 - 2015
N2 - In this paper, we report on metallization stack as an ohmic contact to gateless AlGaN/GaN high electron mobility transistors (HEMTs). As compared with Ion- Selective Field Effect Transistor (ISFET) based on Silicon, AlGaN/GaN HEMT has several attractive points for various chemical and biological sensor applications. One of the unique features in AlGaN/GaN, which is a high-density Two Dimensional Electron Gas (2DEG), is known to allow highly sensitive detection of surface phenomenon. Many researchers have elucidated the mechanism and improved sensitivity with perspective of 2DEG. However, there are no researches that explain why Ti/Al/Ti/Au stack is used as an ohmic contact in pH sensors based on AlGaN/GaN HEMTs. We focused on the relationship between ohmic materials on AlGaN/GaN HEMT and sensitivity of pH sensors.
AB - In this paper, we report on metallization stack as an ohmic contact to gateless AlGaN/GaN high electron mobility transistors (HEMTs). As compared with Ion- Selective Field Effect Transistor (ISFET) based on Silicon, AlGaN/GaN HEMT has several attractive points for various chemical and biological sensor applications. One of the unique features in AlGaN/GaN, which is a high-density Two Dimensional Electron Gas (2DEG), is known to allow highly sensitive detection of surface phenomenon. Many researchers have elucidated the mechanism and improved sensitivity with perspective of 2DEG. However, there are no researches that explain why Ti/Al/Ti/Au stack is used as an ohmic contact in pH sensors based on AlGaN/GaN HEMTs. We focused on the relationship between ohmic materials on AlGaN/GaN HEMT and sensitivity of pH sensors.
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M3 - Conference contribution
AN - SCOPUS:84983462637
T3 - NSTI: Advanced Materials - TechConnect Briefs 2015
SP - 159
EP - 161
BT - NSTI
A2 - Laudon, Matthew
A2 - Romanowicz, Bart
PB - Taylor and Francis Inc.
T2 - 10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference
Y2 - 14 June 2015 through 17 June 2015
ER -