The influence of electrode on sensitivity of pH sensors fabricated on AlGaN/GaN Heterostructures

Chang Taek Lee; Sang Min Jung; Moo Whan Shin

The influence of electrode on sensitivity of pH sensors fabricated on AlGaN/GaN Heterostructures

Chang Taek Lee, Sang Min Jung, Moo Whan Shin

School of Integrated Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this paper, we report on metallization stack as an ohmic contact to gateless AlGaN/GaN high electron mobility transistors (HEMTs). As compared with Ion- Selective Field Effect Transistor (ISFET) based on Silicon, AlGaN/GaN HEMT has several attractive points for various chemical and biological sensor applications. One of the unique features in AlGaN/GaN, which is a high-density Two Dimensional Electron Gas (2DEG), is known to allow highly sensitive detection of surface phenomenon. Many researchers have elucidated the mechanism and improved sensitivity with perspective of 2DEG. However, there are no researches that explain why Ti/Al/Ti/Au stack is used as an ohmic contact in pH sensors based on AlGaN/GaN HEMTs. We focused on the relationship between ohmic materials on AlGaN/GaN HEMT and sensitivity of pH sensors.

Original language	English
Title of host publication	NSTI
Subtitle of host publication	Biotech, Biomaterials and Biomedical - TechConnect Briefs 2015
Editors	Matthew Laudon, Bart Romanowicz
Publisher	Taylor and Francis Inc.
Pages	159-161
Number of pages	3
ISBN (Electronic)	9781498747295
Publication status	Published - 2015
Event	10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference - Washington, United States Duration: 2015 Jun 14 → 2015 Jun 17

Publication series

Name	NSTI: Advanced Materials - TechConnect Briefs 2015
Volume	3

Other

Other	10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference
Country	United States
City	Washington
Period	15/6/14 → 15/6/17

All Science Journal Classification (ASJC) codes

Surfaces, Coatings and Films
Fluid Flow and Transfer Processes
Biotechnology
Fuel Technology

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@inproceedings{957ebc8dc3d049ea92d82f95b1b43a6b,

title = "The influence of electrode on sensitivity of pH sensors fabricated on AlGaN/GaN Heterostructures",

abstract = "In this paper, we report on metallization stack as an ohmic contact to gateless AlGaN/GaN high electron mobility transistors (HEMTs). As compared with Ion- Selective Field Effect Transistor (ISFET) based on Silicon, AlGaN/GaN HEMT has several attractive points for various chemical and biological sensor applications. One of the unique features in AlGaN/GaN, which is a high-density Two Dimensional Electron Gas (2DEG), is known to allow highly sensitive detection of surface phenomenon. Many researchers have elucidated the mechanism and improved sensitivity with perspective of 2DEG. However, there are no researches that explain why Ti/Al/Ti/Au stack is used as an ohmic contact in pH sensors based on AlGaN/GaN HEMTs. We focused on the relationship between ohmic materials on AlGaN/GaN HEMT and sensitivity of pH sensors.",

author = "Lee, {Chang Taek} and Jung, {Sang Min} and Shin, {Moo Whan}",

note = "Publisher Copyright: Copyright 2015 by TechConnect. All rights reserved. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.; 10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference ; Conference date: 14-06-2015 Through 17-06-2015",

year = "2015",

language = "English",

series = "NSTI: Advanced Materials - TechConnect Briefs 2015",

publisher = "Taylor and Francis Inc.",

pages = "159--161",

editor = "Matthew Laudon and Bart Romanowicz",

booktitle = "NSTI",

}

Lee, CT, Jung, SM & Shin, MW 2015, The influence of electrode on sensitivity of pH sensors fabricated on AlGaN/GaN Heterostructures. in M Laudon & B Romanowicz (eds), NSTI: Biotech, Biomaterials and Biomedical - TechConnect Briefs 2015. NSTI: Advanced Materials - TechConnect Briefs 2015, vol. 3, Taylor and Francis Inc., pp. 159-161, 10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference, Washington, United States, 15/6/14.

The influence of electrode on sensitivity of pH sensors fabricated on AlGaN/GaN Heterostructures. / Lee, Chang Taek; Jung, Sang Min; Shin, Moo Whan.

NSTI: Biotech, Biomaterials and Biomedical - TechConnect Briefs 2015. ed. / Matthew Laudon; Bart Romanowicz. Taylor and Francis Inc., 2015. p. 159-161 (NSTI: Advanced Materials - TechConnect Briefs 2015; Vol. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - The influence of electrode on sensitivity of pH sensors fabricated on AlGaN/GaN Heterostructures

AU - Lee, Chang Taek

AU - Jung, Sang Min

AU - Shin, Moo Whan

PY - 2015

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N2 - In this paper, we report on metallization stack as an ohmic contact to gateless AlGaN/GaN high electron mobility transistors (HEMTs). As compared with Ion- Selective Field Effect Transistor (ISFET) based on Silicon, AlGaN/GaN HEMT has several attractive points for various chemical and biological sensor applications. One of the unique features in AlGaN/GaN, which is a high-density Two Dimensional Electron Gas (2DEG), is known to allow highly sensitive detection of surface phenomenon. Many researchers have elucidated the mechanism and improved sensitivity with perspective of 2DEG. However, there are no researches that explain why Ti/Al/Ti/Au stack is used as an ohmic contact in pH sensors based on AlGaN/GaN HEMTs. We focused on the relationship between ohmic materials on AlGaN/GaN HEMT and sensitivity of pH sensors.

AB - In this paper, we report on metallization stack as an ohmic contact to gateless AlGaN/GaN high electron mobility transistors (HEMTs). As compared with Ion- Selective Field Effect Transistor (ISFET) based on Silicon, AlGaN/GaN HEMT has several attractive points for various chemical and biological sensor applications. One of the unique features in AlGaN/GaN, which is a high-density Two Dimensional Electron Gas (2DEG), is known to allow highly sensitive detection of surface phenomenon. Many researchers have elucidated the mechanism and improved sensitivity with perspective of 2DEG. However, there are no researches that explain why Ti/Al/Ti/Au stack is used as an ohmic contact in pH sensors based on AlGaN/GaN HEMTs. We focused on the relationship between ohmic materials on AlGaN/GaN HEMT and sensitivity of pH sensors.

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