Abstract
In this paper, we report on metallization stack as an ohmic contact to gateless AlGaN/GaN high electron mobility transistors (HEMTs). As compared with Ion- Selective Field Effect Transistor (ISFET) based on Silicon, AlGaN/GaN HEMT has several attractive points for various chemical and biological sensor applications. One of the unique features in AlGaN/GaN, which is a high-density Two Dimensional Electron Gas (2DEG), is known to allow highly sensitive detection of surface phenomenon. Many researchers have elucidated the mechanism and improved sensitivity with perspective of 2DEG. However, there are no researches that explain why Ti/Al/Ti/Au stack is used as an ohmic contact in pH sensors based on AlGaN/GaN HEMTs. We focused on the relationship between ohmic materials on AlGaN/GaN HEMT and sensitivity of pH sensors.
| Original language | English |
|---|---|
| Title of host publication | NSTI |
| Subtitle of host publication | Biotech, Biomaterials and Biomedical - TechConnect Briefs 2015 |
| Editors | Matthew Laudon, Bart Romanowicz |
| Publisher | Taylor and Francis Inc. |
| Pages | 159-161 |
| Number of pages | 3 |
| ISBN (Electronic) | 9781498747295 |
| Publication status | Published - 2015 Jan 1 |
| Event | 10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference - Washington, United States Duration: 2015 Jun 14 → 2015 Jun 17 |
Publication series
| Name | NSTI: Advanced Materials - TechConnect Briefs 2015 |
|---|---|
| Volume | 3 |
Other
| Other | 10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference |
|---|---|
| Country | United States |
| City | Washington |
| Period | 15/6/14 → 15/6/17 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Surfaces, Coatings and Films
- Fluid Flow and Transfer Processes
- Biotechnology
- Fuel Technology
Cite this
}
The influence of electrode on sensitivity of pH sensors fabricated on AlGaN/GaN Heterostructures. / Lee, Chang Taek; Jung, Sang Min; Shin, Moo Whan.
NSTI: Biotech, Biomaterials and Biomedical - TechConnect Briefs 2015. ed. / Matthew Laudon; Bart Romanowicz. Taylor and Francis Inc., 2015. p. 159-161 (NSTI: Advanced Materials - TechConnect Briefs 2015; Vol. 3).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - The influence of electrode on sensitivity of pH sensors fabricated on AlGaN/GaN Heterostructures
AU - Lee, Chang Taek
AU - Jung, Sang Min
AU - Shin, Moo Whan
PY - 2015/1/1
Y1 - 2015/1/1
N2 - In this paper, we report on metallization stack as an ohmic contact to gateless AlGaN/GaN high electron mobility transistors (HEMTs). As compared with Ion- Selective Field Effect Transistor (ISFET) based on Silicon, AlGaN/GaN HEMT has several attractive points for various chemical and biological sensor applications. One of the unique features in AlGaN/GaN, which is a high-density Two Dimensional Electron Gas (2DEG), is known to allow highly sensitive detection of surface phenomenon. Many researchers have elucidated the mechanism and improved sensitivity with perspective of 2DEG. However, there are no researches that explain why Ti/Al/Ti/Au stack is used as an ohmic contact in pH sensors based on AlGaN/GaN HEMTs. We focused on the relationship between ohmic materials on AlGaN/GaN HEMT and sensitivity of pH sensors.
AB - In this paper, we report on metallization stack as an ohmic contact to gateless AlGaN/GaN high electron mobility transistors (HEMTs). As compared with Ion- Selective Field Effect Transistor (ISFET) based on Silicon, AlGaN/GaN HEMT has several attractive points for various chemical and biological sensor applications. One of the unique features in AlGaN/GaN, which is a high-density Two Dimensional Electron Gas (2DEG), is known to allow highly sensitive detection of surface phenomenon. Many researchers have elucidated the mechanism and improved sensitivity with perspective of 2DEG. However, there are no researches that explain why Ti/Al/Ti/Au stack is used as an ohmic contact in pH sensors based on AlGaN/GaN HEMTs. We focused on the relationship between ohmic materials on AlGaN/GaN HEMT and sensitivity of pH sensors.
UR - http://www.scopus.com/inward/record.url?scp=84983462637&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84983462637&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84983462637
T3 - NSTI: Advanced Materials - TechConnect Briefs 2015
SP - 159
EP - 161
BT - NSTI
A2 - Laudon, Matthew
A2 - Romanowicz, Bart
PB - Taylor and Francis Inc.
ER -