Abstract
In this paper, we report on metallization stack as an ohmic contact to gateless AlGaN/GaN high electron mobility transistors (HEMTs). As compared with Ion- Selective Field Effect Transistor (ISFET) based on Silicon, AlGaN/GaN HEMT has several attractive points for various chemical and biological sensor applications. One of the unique features in AlGaN/GaN, which is a high-density Two Dimensional Electron Gas (2DEG), is known to allow highly sensitive detection of surface phenomenon. Many researchers have elucidated the mechanism and improved sensitivity with perspective of 2DEG. However, there are no researches that explain why Ti/Al/Ti/Au stack is used as an ohmic contact in pH sensors based on AlGaN/GaN HEMTs. We focused on the relationship between ohmic materials on AlGaN/GaN HEMT and sensitivity of pH sensors.
Original language | English |
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Title of host publication | NSTI |
Subtitle of host publication | Biotech, Biomaterials and Biomedical - TechConnect Briefs 2015 |
Editors | Matthew Laudon, Bart Romanowicz |
Publisher | Taylor and Francis Inc. |
Pages | 159-161 |
Number of pages | 3 |
ISBN (Electronic) | 9781498747295 |
Publication status | Published - 2015 |
Event | 10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference - Washington, United States Duration: 2015 Jun 14 → 2015 Jun 17 |
Publication series
Name | NSTI: Advanced Materials - TechConnect Briefs 2015 |
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Volume | 3 |
Other
Other | 10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference |
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Country/Territory | United States |
City | Washington |
Period | 15/6/14 → 15/6/17 |
Bibliographical note
Publisher Copyright:Copyright 2015 by TechConnect. All rights reserved.
All Science Journal Classification (ASJC) codes
- Surfaces, Coatings and Films
- Fluid Flow and Transfer Processes
- Biotechnology
- Fuel Technology