The influence of electrode on sensitivity of pH sensors fabricated on AlGaN/GaN Heterostructures

Chang Taek Lee, Sang Min Jung, Moo Whan Shin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we report on metallization stack as an ohmic contact to gateless AlGaN/GaN high electron mobility transistors (HEMTs). As compared with Ion- Selective Field Effect Transistor (ISFET) based on Silicon, AlGaN/GaN HEMT has several attractive points for various chemical and biological sensor applications. One of the unique features in AlGaN/GaN, which is a high-density Two Dimensional Electron Gas (2DEG), is known to allow highly sensitive detection of surface phenomenon. Many researchers have elucidated the mechanism and improved sensitivity with perspective of 2DEG. However, there are no researches that explain why Ti/Al/Ti/Au stack is used as an ohmic contact in pH sensors based on AlGaN/GaN HEMTs. We focused on the relationship between ohmic materials on AlGaN/GaN HEMT and sensitivity of pH sensors.

Original languageEnglish
Title of host publicationNSTI
Subtitle of host publicationBiotech, Biomaterials and Biomedical - TechConnect Briefs 2015
EditorsMatthew Laudon, Bart Romanowicz
PublisherTaylor and Francis Inc.
Pages159-161
Number of pages3
ISBN (Electronic)9781498747295
Publication statusPublished - 2015 Jan 1
Event10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference - Washington, United States
Duration: 2015 Jun 142015 Jun 17

Publication series

NameNSTI: Advanced Materials - TechConnect Briefs 2015
Volume3

Other

Other10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference
CountryUnited States
CityWashington
Period15/6/1415/6/17

Fingerprint

pH sensors
High electron mobility transistors
Two dimensional electron gas
Heterojunctions
Electrodes
Electrons
Ohmic contacts
Surface phenomena
Field effect transistors
Metallizing
Silicon
Gases
Research Personnel
aluminum gallium nitride
Ions
Sensors
Research

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films
  • Fluid Flow and Transfer Processes
  • Biotechnology
  • Fuel Technology

Cite this

Lee, C. T., Jung, S. M., & Shin, M. W. (2015). The influence of electrode on sensitivity of pH sensors fabricated on AlGaN/GaN Heterostructures. In M. Laudon, & B. Romanowicz (Eds.), NSTI: Biotech, Biomaterials and Biomedical - TechConnect Briefs 2015 (pp. 159-161). (NSTI: Advanced Materials - TechConnect Briefs 2015; Vol. 3). Taylor and Francis Inc..
Lee, Chang Taek ; Jung, Sang Min ; Shin, Moo Whan. / The influence of electrode on sensitivity of pH sensors fabricated on AlGaN/GaN Heterostructures. NSTI: Biotech, Biomaterials and Biomedical - TechConnect Briefs 2015. editor / Matthew Laudon ; Bart Romanowicz. Taylor and Francis Inc., 2015. pp. 159-161 (NSTI: Advanced Materials - TechConnect Briefs 2015).
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Lee, CT, Jung, SM & Shin, MW 2015, The influence of electrode on sensitivity of pH sensors fabricated on AlGaN/GaN Heterostructures. in M Laudon & B Romanowicz (eds), NSTI: Biotech, Biomaterials and Biomedical - TechConnect Briefs 2015. NSTI: Advanced Materials - TechConnect Briefs 2015, vol. 3, Taylor and Francis Inc., pp. 159-161, 10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference, Washington, United States, 15/6/14.

The influence of electrode on sensitivity of pH sensors fabricated on AlGaN/GaN Heterostructures. / Lee, Chang Taek; Jung, Sang Min; Shin, Moo Whan.

NSTI: Biotech, Biomaterials and Biomedical - TechConnect Briefs 2015. ed. / Matthew Laudon; Bart Romanowicz. Taylor and Francis Inc., 2015. p. 159-161 (NSTI: Advanced Materials - TechConnect Briefs 2015; Vol. 3).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - In this paper, we report on metallization stack as an ohmic contact to gateless AlGaN/GaN high electron mobility transistors (HEMTs). As compared with Ion- Selective Field Effect Transistor (ISFET) based on Silicon, AlGaN/GaN HEMT has several attractive points for various chemical and biological sensor applications. One of the unique features in AlGaN/GaN, which is a high-density Two Dimensional Electron Gas (2DEG), is known to allow highly sensitive detection of surface phenomenon. Many researchers have elucidated the mechanism and improved sensitivity with perspective of 2DEG. However, there are no researches that explain why Ti/Al/Ti/Au stack is used as an ohmic contact in pH sensors based on AlGaN/GaN HEMTs. We focused on the relationship between ohmic materials on AlGaN/GaN HEMT and sensitivity of pH sensors.

AB - In this paper, we report on metallization stack as an ohmic contact to gateless AlGaN/GaN high electron mobility transistors (HEMTs). As compared with Ion- Selective Field Effect Transistor (ISFET) based on Silicon, AlGaN/GaN HEMT has several attractive points for various chemical and biological sensor applications. One of the unique features in AlGaN/GaN, which is a high-density Two Dimensional Electron Gas (2DEG), is known to allow highly sensitive detection of surface phenomenon. Many researchers have elucidated the mechanism and improved sensitivity with perspective of 2DEG. However, there are no researches that explain why Ti/Al/Ti/Au stack is used as an ohmic contact in pH sensors based on AlGaN/GaN HEMTs. We focused on the relationship between ohmic materials on AlGaN/GaN HEMT and sensitivity of pH sensors.

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Lee CT, Jung SM, Shin MW. The influence of electrode on sensitivity of pH sensors fabricated on AlGaN/GaN Heterostructures. In Laudon M, Romanowicz B, editors, NSTI: Biotech, Biomaterials and Biomedical - TechConnect Briefs 2015. Taylor and Francis Inc. 2015. p. 159-161. (NSTI: Advanced Materials - TechConnect Briefs 2015).