The influence of in/Zn ratio on the performance and negative-bias instability of Hf-In-Zn-O thin-film transistors under illumination

Hyun Suk Kim, Joon Seok Park, Wan Joo Maeng, Kyoung Seok Son, Tae Sang Kim, Myungkwan Ryu, Jiyoul Lee, Jae Cheol Lee, Gunwoo Ko, Seongil Im, Sang Yoon Lee

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

The performance and stability of hafnium-indium-zinc-oxide (HIZO) thin-film transistors (TFTs) are evaluated with respect to the relative content in In and Zn cations. While devices that incorporate an active layer with an In-rich composition exhibit higher field-effect mobility values, they undergo larger negative shifts in Vth upon negative-bias illumination stress (NBIS). Density-of-states analyses suggest that a higher In/Zn ratio in the semiconductor results in larger defect states in the vicinity of the semiconductor/gate-insulator interface. Accordingly, these defect states may act as carrier traps that accelerate the degradation of HIZO TFTs upon NBIS.

Original languageEnglish
Article number5985469
Pages (from-to)1251-1253
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number9
DOIs
Publication statusPublished - 2011 Sep 1

Fingerprint

Hafnium
Zinc Oxide
Indium
Thin film transistors
Zinc oxide
Oxide films
Lighting
Semiconductor materials
Defects
Cations
Positive ions
Degradation
Chemical analysis

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Kim, Hyun Suk ; Park, Joon Seok ; Maeng, Wan Joo ; Son, Kyoung Seok ; Kim, Tae Sang ; Ryu, Myungkwan ; Lee, Jiyoul ; Lee, Jae Cheol ; Ko, Gunwoo ; Im, Seongil ; Lee, Sang Yoon. / The influence of in/Zn ratio on the performance and negative-bias instability of Hf-In-Zn-O thin-film transistors under illumination. In: IEEE Electron Device Letters. 2011 ; Vol. 32, No. 9. pp. 1251-1253.
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title = "The influence of in/Zn ratio on the performance and negative-bias instability of Hf-In-Zn-O thin-film transistors under illumination",
abstract = "The performance and stability of hafnium-indium-zinc-oxide (HIZO) thin-film transistors (TFTs) are evaluated with respect to the relative content in In and Zn cations. While devices that incorporate an active layer with an In-rich composition exhibit higher field-effect mobility values, they undergo larger negative shifts in Vth upon negative-bias illumination stress (NBIS). Density-of-states analyses suggest that a higher In/Zn ratio in the semiconductor results in larger defect states in the vicinity of the semiconductor/gate-insulator interface. Accordingly, these defect states may act as carrier traps that accelerate the degradation of HIZO TFTs upon NBIS.",
author = "Kim, {Hyun Suk} and Park, {Joon Seok} and Maeng, {Wan Joo} and Son, {Kyoung Seok} and Kim, {Tae Sang} and Myungkwan Ryu and Jiyoul Lee and Lee, {Jae Cheol} and Gunwoo Ko and Seongil Im and Lee, {Sang Yoon}",
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Kim, HS, Park, JS, Maeng, WJ, Son, KS, Kim, TS, Ryu, M, Lee, J, Lee, JC, Ko, G, Im, S & Lee, SY 2011, 'The influence of in/Zn ratio on the performance and negative-bias instability of Hf-In-Zn-O thin-film transistors under illumination', IEEE Electron Device Letters, vol. 32, no. 9, 5985469, pp. 1251-1253. https://doi.org/10.1109/LED.2011.2160836

The influence of in/Zn ratio on the performance and negative-bias instability of Hf-In-Zn-O thin-film transistors under illumination. / Kim, Hyun Suk; Park, Joon Seok; Maeng, Wan Joo; Son, Kyoung Seok; Kim, Tae Sang; Ryu, Myungkwan; Lee, Jiyoul; Lee, Jae Cheol; Ko, Gunwoo; Im, Seongil; Lee, Sang Yoon.

In: IEEE Electron Device Letters, Vol. 32, No. 9, 5985469, 01.09.2011, p. 1251-1253.

Research output: Contribution to journalArticle

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AU - Kim, Hyun Suk

AU - Park, Joon Seok

AU - Maeng, Wan Joo

AU - Son, Kyoung Seok

AU - Kim, Tae Sang

AU - Ryu, Myungkwan

AU - Lee, Jiyoul

AU - Lee, Jae Cheol

AU - Ko, Gunwoo

AU - Im, Seongil

AU - Lee, Sang Yoon

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