The influence of in/Zn ratio on the performance and negative-bias instability of Hf-In-Zn-O thin-film transistors under illumination

Hyun Suk Kim, Joon Seok Park, Wan Joo Maeng, Kyoung Seok Son, Tae Sang Kim, Myungkwan Ryu, Jiyoul Lee, Jae Cheol Lee, Gunwoo Ko, Seongil Im, Sang Yoon Lee

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Abstract

The performance and stability of hafnium-indium-zinc-oxide (HIZO) thin-film transistors (TFTs) are evaluated with respect to the relative content in In and Zn cations. While devices that incorporate an active layer with an In-rich composition exhibit higher field-effect mobility values, they undergo larger negative shifts in Vth upon negative-bias illumination stress (NBIS). Density-of-states analyses suggest that a higher In/Zn ratio in the semiconductor results in larger defect states in the vicinity of the semiconductor/gate-insulator interface. Accordingly, these defect states may act as carrier traps that accelerate the degradation of HIZO TFTs upon NBIS.

Original languageEnglish
Article number5985469
Pages (from-to)1251-1253
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number9
DOIs
Publication statusPublished - 2011 Sep 1

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Kim, H. S., Park, J. S., Maeng, W. J., Son, K. S., Kim, T. S., Ryu, M., Lee, J., Lee, J. C., Ko, G., Im, S., & Lee, S. Y. (2011). The influence of in/Zn ratio on the performance and negative-bias instability of Hf-In-Zn-O thin-film transistors under illumination. IEEE Electron Device Letters, 32(9), 1251-1253. [5985469]. https://doi.org/10.1109/LED.2011.2160836