The influence of oxygen high pressure annealing on the performance and bias instability of amorphous Ge-In-Ga-O thin film transistors

Byung Du Ahn, Hyun Suk Kim, You Seung Rim, Jin Seong Park, Heon Je Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)
Original languageEnglish
Pages (from-to)4132
Number of pages4136
JournalIEEE Transactions on Electron Devices
Volume61
Issue number12
Publication statusPublished - 2014 Oct

Cite this

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title = "The influence of oxygen high pressure annealing on the performance and bias instability of amorphous Ge-In-Ga-O thin film transistors",
author = "Ahn, {Byung Du} and Kim, {Hyun Suk} and Rim, {You Seung} and Park, {Jin Seong} and Kim, {Heon Je}",
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journal = "IEEE Transactions on Electron Devices",
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publisher = "Institute of Electrical and Electronics Engineers Inc.",
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The influence of oxygen high pressure annealing on the performance and bias instability of amorphous Ge-In-Ga-O thin film transistors. / Ahn, Byung Du; Kim, Hyun Suk; Rim, You Seung; Park, Jin Seong; Kim, Heon Je.

In: IEEE Transactions on Electron Devices, Vol. 61, No. 12, 10.2014, p. 4132.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The influence of oxygen high pressure annealing on the performance and bias instability of amorphous Ge-In-Ga-O thin film transistors

AU - Ahn, Byung Du

AU - Kim, Hyun Suk

AU - Rim, You Seung

AU - Park, Jin Seong

AU - Kim, Heon Je

PY - 2014/10

Y1 - 2014/10

M3 - Article

VL - 61

SP - 4132

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 12

ER -