The influence of post-annealing temperature on indium-silicon oxide thin film transistors

S. Arulkumar; S. Parthiban; J. Y. Kwon

doi:10.1016/j.mssp.2022.106665

The influence of post-annealing temperature on indium-silicon oxide thin film transistors

S. Arulkumar, S. Parthiban, J. Y. Kwon

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

Abstract

The room temperature sputtered Indium silicon oxide (ISO) thin-films were post annealed at various temperatures and studied for thin-film transistor (TFT) active channel layer application. The structural and optical properties of as-deposited and post-annealed ISO thin-films were analysed. XRD and HRTEM analysis revealed transformation of ISO thin film from amorphous nature to polycrystalline nature when post-annealed above 150 °C. The surface topography analysis indicated the presence of smooth surfaces for all ISO thin-films. ISO thin-films exhibited the average visible transmittance of 87% regardless of post-annealing temperature. The highest saturation mobility of 39.1 cm²/V.s was achieved for ISO TFT post-annealed at 200 °C. The obtained results show that post annealing temperature has significant influence on ISO TFT properties.

Original language	English
Article number	106665
Journal	Materials Science in Semiconductor Processing
Volume	145
DOIs	https://doi.org/10.1016/j.mssp.2022.106665
Publication status	Published - 2022 Jul

Bibliographical note

Funding Information:
Dr. S. Parthiban thanks DST SERB (Grant no. CRG/2019/002107 ) for the financial support.

Publisher Copyright:
© 2022 Elsevier Ltd

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mssp.2022.106665

Cite this

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title = "The influence of post-annealing temperature on indium-silicon oxide thin film transistors",

abstract = "The room temperature sputtered Indium silicon oxide (ISO) thin-films were post annealed at various temperatures and studied for thin-film transistor (TFT) active channel layer application. The structural and optical properties of as-deposited and post-annealed ISO thin-films were analysed. XRD and HRTEM analysis revealed transformation of ISO thin film from amorphous nature to polycrystalline nature when post-annealed above 150 °C. The surface topography analysis indicated the presence of smooth surfaces for all ISO thin-films. ISO thin-films exhibited the average visible transmittance of 87% regardless of post-annealing temperature. The highest saturation mobility of 39.1 cm2/V.s was achieved for ISO TFT post-annealed at 200 °C. The obtained results show that post annealing temperature has significant influence on ISO TFT properties.",

author = "S. Arulkumar and S. Parthiban and Kwon, {J. Y.}",

note = "Funding Information: Dr. S. Parthiban thanks DST SERB (Grant no. CRG/2019/002107 ) for the financial support. Publisher Copyright: {\textcopyright} 2022 Elsevier Ltd",

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doi = "10.1016/j.mssp.2022.106665",

language = "English",

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T1 - The influence of post-annealing temperature on indium-silicon oxide thin film transistors

AU - Arulkumar, S.

AU - Parthiban, S.

AU - Kwon, J. Y.

PY - 2022/7

Y1 - 2022/7

N2 - The room temperature sputtered Indium silicon oxide (ISO) thin-films were post annealed at various temperatures and studied for thin-film transistor (TFT) active channel layer application. The structural and optical properties of as-deposited and post-annealed ISO thin-films were analysed. XRD and HRTEM analysis revealed transformation of ISO thin film from amorphous nature to polycrystalline nature when post-annealed above 150 °C. The surface topography analysis indicated the presence of smooth surfaces for all ISO thin-films. ISO thin-films exhibited the average visible transmittance of 87% regardless of post-annealing temperature. The highest saturation mobility of 39.1 cm2/V.s was achieved for ISO TFT post-annealed at 200 °C. The obtained results show that post annealing temperature has significant influence on ISO TFT properties.

AB - The room temperature sputtered Indium silicon oxide (ISO) thin-films were post annealed at various temperatures and studied for thin-film transistor (TFT) active channel layer application. The structural and optical properties of as-deposited and post-annealed ISO thin-films were analysed. XRD and HRTEM analysis revealed transformation of ISO thin film from amorphous nature to polycrystalline nature when post-annealed above 150 °C. The surface topography analysis indicated the presence of smooth surfaces for all ISO thin-films. ISO thin-films exhibited the average visible transmittance of 87% regardless of post-annealing temperature. The highest saturation mobility of 39.1 cm2/V.s was achieved for ISO TFT post-annealed at 200 °C. The obtained results show that post annealing temperature has significant influence on ISO TFT properties.

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The influence of post-annealing temperature on indium-silicon oxide thin film transistors

Abstract

Bibliographical note

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