The influence of post-annealing temperature on indium-silicon oxide thin film transistors

S. Arulkumar, S. Parthiban, J. Y. Kwon

Research output: Contribution to journalArticlepeer-review


The room temperature sputtered Indium silicon oxide (ISO) thin-films were post annealed at various temperatures and studied for thin-film transistor (TFT) active channel layer application. The structural and optical properties of as-deposited and post-annealed ISO thin-films were analysed. XRD and HRTEM analysis revealed transformation of ISO thin film from amorphous nature to polycrystalline nature when post-annealed above 150 °C. The surface topography analysis indicated the presence of smooth surfaces for all ISO thin-films. ISO thin-films exhibited the average visible transmittance of 87% regardless of post-annealing temperature. The highest saturation mobility of 39.1 cm2/V.s was achieved for ISO TFT post-annealed at 200 °C. The obtained results show that post annealing temperature has significant influence on ISO TFT properties.

Original languageEnglish
Article number106665
JournalMaterials Science in Semiconductor Processing
Publication statusPublished - 2022 Jul

Bibliographical note

Funding Information:
Dr. S. Parthiban thanks DST SERB (Grant no. CRG/2019/002107 ) for the financial support.

Publisher Copyright:
© 2022 Elsevier Ltd

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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