The influence of sputtering power and O2 /Ar flow ratio on the performance and stability of Hf-In-Zn-O thin film transistors under illumination

Hyun Suk Kim, Kyung Bae Park, Kyoung Seok Son, Joon Seok Park, Wan Joo Maeng, Tae Sang Kim, Kwang Hee Lee, Eok Su Kim, Jiyoul Lee, Joonki Suh, Jong Baek Seon, Myung Kwan Ryu, Sang Yoon Lee, Kimoon Lee, Seongil Im

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

The performance and stability of amorphous HfInZnO thin film transistors under visible light illumination were studied. The extent of device degradation upon negative bias stress with the presence of visible light is found to be strongly sensitive to the extent of photoelectric effect in the oxide semiconductor. Highly stable devices were fabricated by optimizing the deposition conditions of HfInZnO films, where the combination of high sputtering power and high O2 /Ar gas flow ratio was found to result in the highest stability under bias stress experiments.

Original languageEnglish
Article number102103
JournalApplied Physics Letters
Volume97
Issue number10
DOIs
Publication statusPublished - 2010 Sep 6

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transistors
sputtering
illumination
photoelectric effect
thin films
gas flow
degradation
oxides

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Kim, Hyun Suk ; Park, Kyung Bae ; Son, Kyoung Seok ; Park, Joon Seok ; Maeng, Wan Joo ; Kim, Tae Sang ; Lee, Kwang Hee ; Kim, Eok Su ; Lee, Jiyoul ; Suh, Joonki ; Seon, Jong Baek ; Ryu, Myung Kwan ; Lee, Sang Yoon ; Lee, Kimoon ; Im, Seongil. / The influence of sputtering power and O2 /Ar flow ratio on the performance and stability of Hf-In-Zn-O thin film transistors under illumination. In: Applied Physics Letters. 2010 ; Vol. 97, No. 10.
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abstract = "The performance and stability of amorphous HfInZnO thin film transistors under visible light illumination were studied. The extent of device degradation upon negative bias stress with the presence of visible light is found to be strongly sensitive to the extent of photoelectric effect in the oxide semiconductor. Highly stable devices were fabricated by optimizing the deposition conditions of HfInZnO films, where the combination of high sputtering power and high O2 /Ar gas flow ratio was found to result in the highest stability under bias stress experiments.",
author = "Kim, {Hyun Suk} and Park, {Kyung Bae} and Son, {Kyoung Seok} and Park, {Joon Seok} and Maeng, {Wan Joo} and Kim, {Tae Sang} and Lee, {Kwang Hee} and Kim, {Eok Su} and Jiyoul Lee and Joonki Suh and Seon, {Jong Baek} and Ryu, {Myung Kwan} and Lee, {Sang Yoon} and Kimoon Lee and Seongil Im",
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Kim, HS, Park, KB, Son, KS, Park, JS, Maeng, WJ, Kim, TS, Lee, KH, Kim, ES, Lee, J, Suh, J, Seon, JB, Ryu, MK, Lee, SY, Lee, K & Im, S 2010, 'The influence of sputtering power and O2 /Ar flow ratio on the performance and stability of Hf-In-Zn-O thin film transistors under illumination', Applied Physics Letters, vol. 97, no. 10, 102103. https://doi.org/10.1063/1.3488823

The influence of sputtering power and O2 /Ar flow ratio on the performance and stability of Hf-In-Zn-O thin film transistors under illumination. / Kim, Hyun Suk; Park, Kyung Bae; Son, Kyoung Seok; Park, Joon Seok; Maeng, Wan Joo; Kim, Tae Sang; Lee, Kwang Hee; Kim, Eok Su; Lee, Jiyoul; Suh, Joonki; Seon, Jong Baek; Ryu, Myung Kwan; Lee, Sang Yoon; Lee, Kimoon; Im, Seongil.

In: Applied Physics Letters, Vol. 97, No. 10, 102103, 06.09.2010.

Research output: Contribution to journalArticle

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AU - Park, Joon Seok

AU - Maeng, Wan Joo

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AU - Lee, Jiyoul

AU - Suh, Joonki

AU - Seon, Jong Baek

AU - Ryu, Myung Kwan

AU - Lee, Sang Yoon

AU - Lee, Kimoon

AU - Im, Seongil

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