The influence of sputtering power and O2 /Ar flow ratio on the performance and stability of Hf-In-Zn-O thin film transistors under illumination

Hyun Suk Kim, Kyung Bae Park, Kyoung Seok Son, Joon Seok Park, Wan Joo Maeng, Tae Sang Kim, Kwang Hee Lee, Eok Su Kim, Jiyoul Lee, Joonki Suh, Jong Baek Seon, Myung Kwan Ryu, Sang Yoon Lee, Kimoon Lee, Seongil Im

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31 Citations (Scopus)

Abstract

The performance and stability of amorphous HfInZnO thin film transistors under visible light illumination were studied. The extent of device degradation upon negative bias stress with the presence of visible light is found to be strongly sensitive to the extent of photoelectric effect in the oxide semiconductor. Highly stable devices were fabricated by optimizing the deposition conditions of HfInZnO films, where the combination of high sputtering power and high O2 /Ar gas flow ratio was found to result in the highest stability under bias stress experiments.

Original languageEnglish
Article number102103
JournalApplied Physics Letters
Volume97
Issue number10
DOIs
Publication statusPublished - 2010 Sep 6

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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