The influence of thin insulating lithium fluoride inserted pentacene layer on pentacene-based organic thin-film transistor

D. S. Park, I. S. Jeong, C. Y. Kim, W. C. Jang, K. Jeong, K. H. Yoo, C. N. Whang, Y. S. Lee, S. O. Kim

Research output: Contribution to journalConference article

9 Citations (Scopus)

Abstract

The pentacene-based organic thin-film transistor (OTFT) with inserted lithium fluoride (LiF) thin layer (1 nm) between pentacene layers was fabricated in ultrahigh vacuum (UHV) condition with all in situ processes and improved electrical properties were achieved. The fabricated device structure is gold (30 nm)/pentacene/LiF (1 nm)/pentacene/SiO2 (100 nm)/p +-Si (substrate): the ratio of the upper pentacene layer thickness and the lower pentacene layer thickness was varied, keeping the sums of two pentacene layers of thickness with 100 nm. With varying the ratio of two pentacene layers of thickness, the field effect mobility and threshold voltage were affected. The field effect mobility increased when LiF layer was near the gold layer and decreased when LiF layer was near the SiO2 layer. In addition, the threshold voltage decreased as LiF layer come close to the gold layer. By inserting a thin LiF layer, the field effect mobility and threshold voltage increased, respectively, from 0.32 to 0.45 cm2/Vs and from - 21.89 to - 4.16 V.

Original languageEnglish
Pages (from-to)385-388
Number of pages4
JournalThin Solid Films
Volume495
Issue number1-2
DOIs
Publication statusPublished - 2006 Jan 20

Fingerprint

lithium fluorides
Thin film transistors
Lithium
transistors
thin films
Threshold voltage
Gold
threshold voltage
Ultrahigh vacuum
gold
pentacene
lithium fluoride
Electric properties
Substrates
electric potential
ultrahigh vacuum

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Park, D. S. ; Jeong, I. S. ; Kim, C. Y. ; Jang, W. C. ; Jeong, K. ; Yoo, K. H. ; Whang, C. N. ; Lee, Y. S. ; Kim, S. O. / The influence of thin insulating lithium fluoride inserted pentacene layer on pentacene-based organic thin-film transistor. In: Thin Solid Films. 2006 ; Vol. 495, No. 1-2. pp. 385-388.
@article{1a5faa46f3ac4482977a27937cc1be2d,
title = "The influence of thin insulating lithium fluoride inserted pentacene layer on pentacene-based organic thin-film transistor",
abstract = "The pentacene-based organic thin-film transistor (OTFT) with inserted lithium fluoride (LiF) thin layer (1 nm) between pentacene layers was fabricated in ultrahigh vacuum (UHV) condition with all in situ processes and improved electrical properties were achieved. The fabricated device structure is gold (30 nm)/pentacene/LiF (1 nm)/pentacene/SiO2 (100 nm)/p +-Si (substrate): the ratio of the upper pentacene layer thickness and the lower pentacene layer thickness was varied, keeping the sums of two pentacene layers of thickness with 100 nm. With varying the ratio of two pentacene layers of thickness, the field effect mobility and threshold voltage were affected. The field effect mobility increased when LiF layer was near the gold layer and decreased when LiF layer was near the SiO2 layer. In addition, the threshold voltage decreased as LiF layer come close to the gold layer. By inserting a thin LiF layer, the field effect mobility and threshold voltage increased, respectively, from 0.32 to 0.45 cm2/Vs and from - 21.89 to - 4.16 V.",
author = "Park, {D. S.} and Jeong, {I. S.} and Kim, {C. Y.} and Jang, {W. C.} and K. Jeong and Yoo, {K. H.} and Whang, {C. N.} and Lee, {Y. S.} and Kim, {S. O.}",
year = "2006",
month = "1",
day = "20",
doi = "10.1016/j.tsf.2005.08.290",
language = "English",
volume = "495",
pages = "385--388",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "1-2",

}

The influence of thin insulating lithium fluoride inserted pentacene layer on pentacene-based organic thin-film transistor. / Park, D. S.; Jeong, I. S.; Kim, C. Y.; Jang, W. C.; Jeong, K.; Yoo, K. H.; Whang, C. N.; Lee, Y. S.; Kim, S. O.

In: Thin Solid Films, Vol. 495, No. 1-2, 20.01.2006, p. 385-388.

Research output: Contribution to journalConference article

TY - JOUR

T1 - The influence of thin insulating lithium fluoride inserted pentacene layer on pentacene-based organic thin-film transistor

AU - Park, D. S.

AU - Jeong, I. S.

AU - Kim, C. Y.

AU - Jang, W. C.

AU - Jeong, K.

AU - Yoo, K. H.

AU - Whang, C. N.

AU - Lee, Y. S.

AU - Kim, S. O.

PY - 2006/1/20

Y1 - 2006/1/20

N2 - The pentacene-based organic thin-film transistor (OTFT) with inserted lithium fluoride (LiF) thin layer (1 nm) between pentacene layers was fabricated in ultrahigh vacuum (UHV) condition with all in situ processes and improved electrical properties were achieved. The fabricated device structure is gold (30 nm)/pentacene/LiF (1 nm)/pentacene/SiO2 (100 nm)/p +-Si (substrate): the ratio of the upper pentacene layer thickness and the lower pentacene layer thickness was varied, keeping the sums of two pentacene layers of thickness with 100 nm. With varying the ratio of two pentacene layers of thickness, the field effect mobility and threshold voltage were affected. The field effect mobility increased when LiF layer was near the gold layer and decreased when LiF layer was near the SiO2 layer. In addition, the threshold voltage decreased as LiF layer come close to the gold layer. By inserting a thin LiF layer, the field effect mobility and threshold voltage increased, respectively, from 0.32 to 0.45 cm2/Vs and from - 21.89 to - 4.16 V.

AB - The pentacene-based organic thin-film transistor (OTFT) with inserted lithium fluoride (LiF) thin layer (1 nm) between pentacene layers was fabricated in ultrahigh vacuum (UHV) condition with all in situ processes and improved electrical properties were achieved. The fabricated device structure is gold (30 nm)/pentacene/LiF (1 nm)/pentacene/SiO2 (100 nm)/p +-Si (substrate): the ratio of the upper pentacene layer thickness and the lower pentacene layer thickness was varied, keeping the sums of two pentacene layers of thickness with 100 nm. With varying the ratio of two pentacene layers of thickness, the field effect mobility and threshold voltage were affected. The field effect mobility increased when LiF layer was near the gold layer and decreased when LiF layer was near the SiO2 layer. In addition, the threshold voltage decreased as LiF layer come close to the gold layer. By inserting a thin LiF layer, the field effect mobility and threshold voltage increased, respectively, from 0.32 to 0.45 cm2/Vs and from - 21.89 to - 4.16 V.

UR - http://www.scopus.com/inward/record.url?scp=28044448540&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=28044448540&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2005.08.290

DO - 10.1016/j.tsf.2005.08.290

M3 - Conference article

VL - 495

SP - 385

EP - 388

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1-2

ER -